CDBQR00340-HF Datasheet by Comchip Technology

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T:
CDBQR00340-HF
Page 1
REV:A
O
Maximum Rating (at TA=25 C unless otherwise noted)
Typ
VRRM
Repetitive peak reverse voltage
Symbol
Parameter Conditions Min
Max
Unit
V
45
VR
Reverse voltage V
40
IFSM
Forward current,surge peak 8.3 ms single half sine-wave superimposed
on rate load(JEDEC method) 500
PDmW
OC
200
+125
-40
Power Dissipation
Sunction temperature
TjOC
+125
Junction temperature
TSTG
mA
IO
Average forward current mA
30
Symbol Typ
Parameter Conditions Min
Max
Unit
O
Electrical Characteristics (at TA=25 C unless otherwise noted)
IRuA
1.5
Forward voltage IF = 1 mA DC VFV
0.37
0.50
CT
Capacitance between terimnals pF
F = 1 MHZ and 1 VDC reverse voltage
Reverse current VR = 30V
VR = 40V 1.00
Features
-Designed for mounting on small surface.
-Extremely thin package.
-Low stored charge.
-Majority carrier conduction.
Mechanical data
-Case: 0402/SOD-923F standard package,
molded plastic.
-Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
-Polarity: Indicated by cathode band.
-Mounting position: Any
-Weight: 0.001 gram(approx.).
0.041(1.05)
0.037(0.95)
0.026(0.65)
0.022(0.55)
Dimensions in inches and (millimeter)
0.020(0.50) Typ.
0.022(0.55)
0.018(0.45)
0.012(0.30) Typ.
Comchip Technology CO., LTD.
QW-G1106
Io = 30 mA
VR = 40 Volts
RoHS Device
Halogen Free
0402/SOD-923F
SMD Schottky Barrier Diode
Comchip MD a an: Xpecvihu
RATING AND CHARACTERISTIC CURVES (CDBQR00340-HF)
Page 2
REV:A
1m
1n
10u
100u
1u
100n
10n
0510 15 20 25 30 35
0
20
40
60
80
100
0 25 50 75 100 125 150
0.1
1
10
30
0 5 10
15
20 25
0.1 0.2 0.4 0.70 0.5
0.3
100m
10u
1m
10m
0.6
100u
40
O
-25C
O
25 C
O
75C
O
125 C
O
25 C
O
75 C
O
125 C
O
-25 C
Capacitance between terminals (PF)
Reverse voltage (V)
Forward current (A )
Forward voltage (V)
Fig. 1 - Forward characteristics
Reverse current ( A )
Reverse voltage (V)
Fig. 2 - Reverse characteristics
O
Ambient temperature ( C)
Average forward current(%)
Fig.4 - Current derating curve
Fig.3 - Capacitance between
terminals characteristics
Mounting on glass epoxy PCBs
f = 1 MHz
Ta = 25 C
Comchip Technology CO., LTD.
QW-G1106
SMD Schottky Barrier Diode
Index hole <53>
Page 3
REV:A
Comchip Technology CO., LTD.
QW-G1106
Index hole
o
120
Trailer Device Leader
10 pitches (min)10 pitches (min)
.......
.......
....... ..............
....... ..............
End Start
d
E
F
B W
A
P
P0
P1
D1
D2
D
W1
T
C
Direction of Feed
Reel Taping Specification
Polarity
BCdD D2
D1
E F P P0P1T
SYMBOL
A
W W1
(mm)
(inch) 0.026 0.004±0.045 0.004±0.024 0.004±0.061 + 0.004 7.008 0.04±2.362 MIN. 0.512 0.008±
SYMBOL
(mm)
(inch) 0.069 0.004±0.138 0.002±0.157 0.004±0.157 0.004±0.079 0.004±0.009 0.002±0.315 0.008±0.531 MAX.
0.75 0.10± 1.15 0.10±
4.00 0.10±
1.55 + 0.10
3.50 0.05±1.75 0.10±
60.0 MIN. 13.0 0.20±0.60 0.10±
4.00 0.10± 2.00 0.10± 0.22 0.05± 8.00 0.20± 13.5 MAX.
178 1±
0402
(SOD-923F)
0402
(SOD-923F)
SMD Schottky Barrier Diode
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Marking Code
B2
Suggested PAD Layout
SIZE
(inch)
0.030
(mm)
0.750
0.500
0.700
0.020
0.028
1.250 0.049
E0.250 0.010
Standard Package
A
B
C
D
A
C
B
E
D
Page 4
QW-G1106
REV:A
Comchip Technology CO., LTD.
Part Number
CDBQR00340-HF
Marking Code
B2
Case Type
Qty per Reel
(Pcs)
5000
0402/SOD-923F
Reel Size
(inch)
7
0402/SOD-923F
SMD Schottky Barrier Diode

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