RB751V40T1G Datasheet by ON Semiconductor

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© Semiconductor Components Industries, LLC, 2014
September, 2014 − Rev. 5 1Publication Order Number:
RB751V40T1/D
RB751V40T1G
Schottky Barrier Diode
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features
Extremely Fast Switching Speed
Extremely Low Forward Voltage − 0.28 Volts (Typ) @ IF = 1 mAdc
Low Reverse Current
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Reverse Voltage VRM 40 V
Reverse Voltage VR30 Vdc
Forward Continuous Current (DC) IF30 mA
Peak Forward Surge Current IFSM 500 mA
Electrostatic Discharge ESD HBM Class: 1C
MM Class: A
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board,
(Note 1) TA = 25°C
Derate above 25°C
PD200
1.57
mW
mW/°C
Thermal Resistance
Junction−to−Ambient RqJA 635 °C/W
Junction and Storage
Temperature Range
TJ, Tstg −55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 Minimum Pad
40 V SCHOTTKY
BARRIER DIODE
Device Package Shipping
ORDERING INFORMATION
SOD−323
CASE 477
STYLE 1
1
CATHODE
2
ANODE
5E = Specific Device Code
M = Date Code
G= Pb−Free Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
5E MG
G
RB751V40T1G SOD−323
(Pb−Free)
3000 / Tape &
Reel
http://onsemi.com
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1
2
NSVRB751V40T1G SOD−323
(Pb−Free)
3000 / Tape &
Reel
RB751V40T1G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Reverse Breakdown Voltage
(IR = 10 μA)
V(BR)R 30 − Volts
Total Capacitance
(VR = 1.0 V, f = 1.0 MHz)
CT 2.0 2.5 pF
Reverse Leakage
(VR = 30 V)
IR 300 500 nAdc
Forward Voltage
(IF = 1.0 mAdc)
VF 0.28 0.37 Vdc
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
+10 V 2 k
820 Ω
0.1 μF
DUT
VR
100 μH
0.1 μF
50 Ω OUTPUT
PULSE
GENERATOR
50 Ω INPUT
SAMPLING
OSCILLOSCOPE
trtpt
10%
90%
IF
IR
trr t
iR(REC) = 1 mA
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
IF
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
RB751V40T1G
http://onsemi.com
3
25°C
125°C
85°C
TA = 150°C
0 0.05
VF, FORWARD VOLTAGE (VOLTS)
0.1
10
1.0
0.1
85°C
10
0
VR, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001
5
0
VR, REVERSE VOLTAGE (VOLTS)
0.5
0
CT, CAPACITANCE (pF)
2.0 4.0
IF, FORWARD CURRENT (mA)
Figure 2. Typical Forward Voltage Figure 3. Reverse Current versus Reverse
Voltage
Figure 4. Typical Capacitance
-40°C
25°C
IR, REVERSE CURRENT (μA)
-55°C
150°C
125°C
1000
0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 10 15 20 25 30 35
1.0
1.5
2.0
2.5
3.0
6.0 8.0 10 12 14 16 18
100
L ¢ T 1: c}: ‘9 IA1 not: 3 SO 083 Fflfi 2.85 'For addmona‘ mm: detafls‘ p‘ease dow Mounting Technlqu owns the Hng tn a num
RB751V40T1G
http://onsemi.com
4
PACKAGE DIMENSIONS
SOD−323
CASE 477−02
ISSUE H
STYLE 1:
PIN 1. CATHODE
2. ANODE
1.60
0.063
0.63
0.025
0.83
0.033
2.85
0.112
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. LEAD THICKNESS SPECIFIED PER L/F DRAWING
WITH SOLDER PLATING.
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
5. DIMENSION L IS MEASURED FROM END OF RADIUS.
NOTE 3
D
12bE
A3
A1
A
CNOTE 5
L
HE
DIM MIN NOM MAX
MILLIMETERS
A0.80 0.90 1.00
A1 0.00 0.05 0.10
A3 0.15 REF
b0.25 0.32 0.4
C0.089 0.12 0.177
D1.60 1.70 1.80
E1.15 1.25 1.35
0.08
2.30 2.50 2.70
L
0.031 0.035 0.040
0.000 0.002 0.004
0.006 REF
0.010 0.012 0.016
0.003 0.005 0.007
0.062 0.066 0.070
0.045 0.049 0.053
0.003
0.090 0.098 0.105
MIN NOM MAX
INCHES
P
UBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
RB751V40T1/D
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your loc
al
Sales Representative
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SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
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specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
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the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or
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