NUD3105D Datasheet by ON Semiconductor

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3 ON Semiconductor8 Source m m SemxcorduclmCompanenlslndusmes. LLC, guns 1 Omober. 2009 - Rev. 5
© Semiconductor Components Industries, LLC, 2009
October, 2009 Rev. 5
1Publication Order Number:
NUD3105D/D
NUD3105D
Integrated Relay,
Inductive Load Driver
This device is used to switch inductive loads such as relays,
solenoids incandescent lamps, and small DC motors without the need
of a freewheeling diode. The device integrates all necessary items
such as the MOSFET switch, ESD protection, and Zener clamps. It
accepts logic level inputs thus allowing it to be driven by a large
variety of devices including logic gates, inverters, and
microcontrollers.
Features
Provides a Robust Driver Interface Between D.C. Relay Coil and
Sensitive Logic Circuits
Optimized to Switch Relays from 3.0 V to 5.0 V Rail
Capable of Driving Relay Coils Rated up to 2.5 W at 5.0 V
Internal Zener Eliminates the Need of FreeWheeling Diode
Internal Zener Clamp Routes Induced Current to Ground for Quieter
Systems Operation
Low VDS(on) Reduces System Current Drain
PbFree Package is Available
Typical Applications
Telecom: Line Cards, Modems, Answering Machines, FAX
Computers and Office: Photocopiers, Printers, Desktop Computers
Consumer: TVs and VCRs, Stereo Receivers, CD Players,
Cassette Recorders
Industrial: Small Appliances, Security Systems, Automated Test
Equipment, Garage Door Openers
Automotive: 5.0 V Driven Relays, Motor Controls, Power Latches,
Lamp Drivers
INTERNAL CIRCUIT DIAGRAMS
Drain (6)
1.0 k
300 k
Gate (2)
Source (1)
Drain (3)
1.0 k
300 k
Gate (5)
Source (4)
CASE 318F
Device Package Shipping
ORDERING INFORMATION
MARKING
DIAGRAM
Relay, Inductive Load Driver
0.5 Amp, 8.0 V Clamp
NUD3105DMT1 SC74 3000/Tape & Reel
SC74
CASE 318F
STYLE 7
JW4 = Specific Device Code
D = Date Code
G= PbFree Package
JW4 D G
G
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
(Note: Microdot may be in either location)
http://onsemi.com
NUD3105DMT1G SC74
(PbFree)
3000/Tape & Reel
1
6
NUD3105D
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2
MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)
Symbol Rating Value Unit
VDSS Drain to Source Voltage Continuous 6.0 Vdc
VGS Gate to Source Voltage – Continuous 6.0 Vdc
IDDrain Current – Continuous 500 mA
EzSingle Pulse DraintoSource Avalanche Energy (TJinitial = 25°C) 50 mJ
TJJunction Temperature 150 °C
TAOperating Ambient Temperature 40 to 85 °C
Tstg Storage Temperature Range 65 to +150 °C
PDTotal Power Dissipation (Note 1)
Derating Above 25°C
380
1.5
mW
mW/°C
RqJA Thermal Resistance JunctiontoAmbient 329 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. This device contains ESD protection and exceeds the following tests:
Human Body Model 2000 V per MIL_STD883, Method 3015.
Machine Model Method 200 V.
TYPICAL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol Characteristic Min Typ Max Unit
OFF CHARACTERISTICS
VBRDSS Drain to Source Sustaining Voltage (Internally Clamped)
(ID = 10 mA)
6.0 8.0 9.0 V
BVGSO Ig = 1.0 mA 8.0 V
IDSS Drain to Source Leakage Current
(VDS = 5.5 V , VGS = 0 V, TJ = 25°C)
(VDS = 5.5 V, VGS = 0 V, TJ = 85°C )
15
15
mA
IGSS Gate Body Leakage Current
(VGS = 3.0 V, VDS = 0 V)
(VGS = 5.0 V, VDS = 0 V)
5.0
35
65
mA
ON CHARACTERISTICS
VGS(th) Gate Threshold Voltage
(VGS = VDS, ID = 1.0 mA)
(VGS = VDS, ID = 1.0 mA, TJ = 85°C)
0.8
0.8
1.2
1.4
1.4
V
RDS(on) Drain to Source OnResistance
(ID = 250 mA, VGS = 3.0 V)
(ID = 500 mA, VGS = 3.0 V)
(ID = 500 mA, VGS = 5.0 V)
(ID = 500 mA, VGS = 3.0 V, TJ = 85°C)
(ID = 500 mA, VGS = 5.0 V, TJ = 85°C)
1.2
1.3
0.9
1.3
0.9
W
IDS(on) Output Continuous Current
(VDS = 0.25 V, VGS = 3.0 V)
(VDS = 0.25 V, VGS = 3.0 V, TJ = 85°C)
300
200
400
mA
gFS Forward Transconductance
(VOUT = 5.0 V, IOUT = 0.25 A)
350 570 mMhos
NUD3105D
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TYPICAL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol UnitMaxTypMinCharacteristic
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance
(VDS = 5.0 V,VGS = 0 V, f = 10 kHz)
25 pF
Coss Output Capacitance
(VDS = 5.0 V, VGS = 0 V, f = 10 kHz)
37 pF
Crss Transfer Capacitance
(VDS = 5.0 V, VGS = 0 V, f = 10 kHz)
8.0 pF
SWITCHING CHARACTERISTICS
Symbol Characteristic Min Typ Max Units
tPHL
tPLH
tPHL
tPLH
Propagation Delay Times:
High to Low Propagation Delay; Figure 1 (5.0 V)
Low to High Propagation Delay; Figure 1 (5.0 V)
High to Low Propagation Delay; Figure 1 (3.0 V)
Low to High Propagation Delay; Figure 1 (3.0 V)
25
80
44
44
nS
tf
tr
tf
tr
Transition Times:
Fall Time; Figure 1 (5.0 V)
Rise Time; Figure 1 (5.0 V)
Fall Time; Figure 1 (3.0 V)
Rise Time; Figure 1 (3.0 V)
23
32
53
30
nS
Figure 1. Switching Waveforms
Vout
GND
Vin
GND
VZ
VCC
VCC
trtf
tPLH tPHL
50%
90%
50%
10%
“““‘ HHHH Hm ‘ y /‘l 7’”
NUD3105D
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TYPICAL CHARACTERISTICS
VZ, ZENER CLAMP VOLTAGE (V)
VGS = 0 V
11.0
12.0
10.0
9.0
8.0
7.0
13.0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.80
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 2. Output Characteristics
VGS, GATETOSOURCE VOLTAGE (V)
Figure 3. Transfer Function
TEMPERATURE (°C)
Figure 4. On Resistance Variation vs. Temperature Figure 5. RDS(ON) Variation with
GateToSource Voltage
Figure 6. Zener Voltage vs. Temperature
IZ, ZENER CURRENT (mA)
Figure 7. Zener Clamp Voltage vs. Zener Current
ID, DRAIN CURRENT (A)
50 25 0 25 50 75 100
1200
1000
800
600
400
200
0
125
RDS(on), DRAINTOSOURCE
RESISTANCE (mW)
VZ, ZENER VOLTAGE (V)
50 25 0 25 50 75 100 125
IZ = 10 mA
ID = 0.25 A
VGS = 3.0 V
50°C
1.0 1.2 1.4 1.60.8
50
45
40
35
30
25
20
2.0
15
1.8
RDS(on), DRAINTOSOURCE
RESISTANCE (W)
ID = 250 mA
1.0 100.1 100
VGS = 0 V
VGS = 1.0 V
ID, DRAIN CURRENT (A)
VGS = 5.0 V
VGS = 3.0 V
VGS = 2.0 V
TJ = 25°C
10
1.0
0.1
0.01
0.001
0.0001
0.00001
0.000001
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
85°C
40°C
VDS = 0.8 V
ID = 0.5 A
VGS = 3.0 V
ID = 0.5 A
VGS = 5.0 V
VGS, GATETOSOURCE VOLTAGE (V)
50°C
85°C
40°C
125°C
8.20
8.18
8.16
8.14
8.12
8.10
8.08
8.06
8.04
8.02
8.00
TEMPERATURE (°C)
10
1.0
0.1
0.01
0.001
0.0001
0.00001
85°C
40°C
25°C
25°C
25°C
1000
6.0
3L// / 5L; //// vGs : 5.0 v // OQC ’/’ I /”1:"‘"’/ v55 : a o v // 251C //
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TYPICAL CHARACTERISTICS
VDS, DRAINTOSOURCE VOLTAGE (V)
0.01 100100.1
0.1
1.0
0.01
ID, DRAIN CURRENT (A)
1.0
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
ID, DRAIN CURRENT (A)
Figure 8. OnResistance vs. Drain Current and
Temperature
TEMPERATURE (°C)
Figure 9. Gate Leakage vs. Temperature
RDS(ON), DRAINTOSOURCE
RESISTANCE (W)
1.0
0.9
0.8
0.5
0.6
0.7
1.1
1.2
0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5
IGSS, GATE LEAKAGE (mA)
30
25
0
5
10
35
40
50 25 025 50 75 100 125
20
15
125°C
85°C
50°C
25°C
40°C
VGS = 3.0 V
VGS = 5.0 V
Figure 10. Safe Operating Area for NUD3105DLT1
Figure 11. Transient Thermal Response for NUD3105DLT1
0.01 0.1 1.0 10 100 1000 10,000 100,000 1,000,000
D = 0.5
0.2
0.1
0.05
0.02
SINGLE PULSE
0.01
Pd(pk)
t1
t2
DUTY CYCLE = t1/t2
PERIOD
PW
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
1.0
0.1
0.01
0.001
t1, PULSE WIDTH (ms)
DC
PW = 0.1 s
DC = 50%
PW = 7.0 ms
DC = 5%
PW = 10 ms
DC = 20%
Typical
IZ vs. VZ
V(BR)DSS min = 6.0 V
IDContinuous = 0.5 A
VGS = 3.0 V, TC = 25°C
Figure 12. A 200 mW, 5.0 V Dual Coil Lalching Relay Applica with 3.0 V Level Translating Interface http://onsemi.com s
NUD3105D
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6
Designing with this Data Sheet
1. Determine the maximum inductive load current (at
max VCC, min coil resistance & usually minimum
temperature) that the NUD3105D will have to
drive and make sure it is less than the max rated
current.
2. For pulsed operation, use the Transient Thermal
Response of Figure 11 and the instructions with it
to determine the maximum limit on transistor
power dissipation for the desired duty cycle and
temperature range.
3. Use Figures 10 and 11 with the SOA notes to
insure that instantaneous operation does not push
the device beyond the limits of the SOA plot.
4. Verify that the circuit driving the gate will meet
the VGS(th) from the Electrical Characteristics
table.
5. Using the max output current calculated in step 1,
check Figure 7 to insure that the range of Zener
clamp voltage over temperature will satisfy all
system & EMI requirements.
6. Use IGSS and IDSS from the Electrical
Characteristics table to insure that “OFF” state
leakage over temperature and voltage extremes
does not violate any system requirements.
7. Review circuit operation and insure none of the
device max ratings are being exceeded.
Figure 12. A 200 mW, 5.0 V Dual Coil Latching Relay Application
with 3.0 V Level Translating Interface
+4.5 VCC +5.5 Vdc
+
Vout (6)
+
Vin (2)
GND (1)
NUD3105DDMT1
+3.0 VDD +3.75 Vdc
APPLICATIONS DIAGRAMS
Vout (3)
Vin (5)
GND (4)
Max Conllnuous Current forTXZ-SV RelayI RI : I7 Assummg 110% Make ToIe RI:I7552'0,9:160s2M I'______'I i'_ ____'I To Ior Annealed Copper w | ' | | I RI :Iso:2~[1+(o,oo4)~(- 'I-I | | H. IoMax:Is.5VMax—o.25 | 5 . I I . ( | L______J L______J +4 5 TO +55 \ldc 0‘45 TO r ________ ___‘ r——————-I r——————-I | | C C | T . I "W | | I I I II—I | | I—IO | | | I | I l I 1 . I I I ' I I____ __J L______J V 77777777 7777 77777777 777 I I r I I I I I I i—' 7 J Figure 13. A 140 mW, 5.0 V Relay with 1TL Interface Figure 14. A Quad 5.0 V http://onsemi.com 7
NUD3105D
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7
Figure 13. A 140 mW, 5.0 V Relay with TTL Interface
+4.5 TO +5.5 Vdc
+
Vout (3)
AROMAT
TX25V
Max Continuous Current Calculation
for TX25V Relay, R1 = 178 W Nominal @ RA = 25°C
Assuming ±10% Make Tolerance,
R1 = 178 W * 0.9 = 160 W Min @ TA = 25°C
TC for Annealed Copper Wire is 0.4%/°C
R1 = 160 W * [1+(0.004) * (40°25°)] = 118 W Min @ 40°C
IO Max = (5.5 V Max 0.25V) /118 W = 45 mA
+
Vout (3)
AROMAT
JS1E5V
Figure 14. A Quad 5.0 V, 360 mW Coil Relay Bank
+
AROMAT
JS1E5V
+
AROMAT
JS1E5V
+
AROMAT
JS1E5V
+4.5 TO +5.5 Vdc
Vin (1)
GND (2)
NUD3105LT1
Vin (1)
GND (2)
NUD3105LT1
:| £44 :I ‘ ‘ ‘ ‘ mu m m m. uzs uzv asu com um uuza L 1p aw 250 275 cum 0099 mm m 0,037 0,037 (Chm 0N mmmmm J a .aawmumnm scuc
NUD3105D
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PACKAGE DIMENSIONS
SC74
CASE 318F05
ISSUE M
23
456
D
1
e
b
E
A1
A
0.05 (0.002)
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS
OF BASE MATERIAL.
4. 318F01, 02, 03, 04 OBSOLETE. NEW
STANDARD 318F05.
C
L
0.7
0.028
1.9
0.074
0.95
0.037
2.4
0.094
1.0
0.039
0.95
0.037
ǒmm
inchesǓ
SCALE 10:1
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
HE
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.90 1.00 1.10 0.035
INCHES
A1 0.01 0.06 0.10 0.001
b0.25 0.37 0.50 0.010
c0.10 0.18 0.26 0.004
D2.90 3.00 3.10 0.114
E1.30 1.50 1.70 0.051
e0.85 0.95 1.05 0.034
0.20 0.40 0.60 0.008
0.039 0.043
0.002 0.004
0.015 0.020
0.007 0.010
0.118 0.122
0.059 0.067
0.037 0.041
0.016 0.024
NOM MAX
2.50 2.75 3.00 0.099 0.108 0.118
HE
L
0°10°0°10°
q
q
STYLE 7:
PIN 1. SOURCE 1
2. GATE 1
3. DRAIN 2
4. SOURCE 2
5. GATE 2
6. DRAIN 1
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