N(V)TJD4001N Datasheet by ON Semiconductor

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© Semiconductor Components Industries, LLC, 2015
May, 2019 Rev. 7
1Publication Order Number:
NTJD4001N/D
NTJD4001N, NVTJD4001N
MOSFET – Dual, N-Channel,
Small Signal, SC-88
30 V, 250 mA
Features
Low Gate Charge for Fast Switching
Small Footprint 30% Smaller than TSOP6
ESD Protected Gate
AEC Q101 Qualified NVTJD4001N
These Devices are PbFree and are RoHS Compliant
Applications
Low Side Load Switch
LiIon Battery Supplied Devices Cell Phones, PDAs, DSC
Buck Converters
Level Shifts
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter Symbol Value Units
DraintoSource Voltage VDSS 30 V
GatetoSource Voltage VGS ±20 V
Continuous Drain
Current (Note 1)
Steady
State
TA = 25 °CID250 mA
TA = 85 °C 180
Power Dissipation
(Note 1)
Steady
State
TA = 25 °C PD272 mW
Pulsed Drain Current t =10 msIDM 600 mA
Operating Junction and Storage Temperature TJ, TSTG 55 to
150
°C
Source Current (Body Diode) IS250 mA
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s) TL260 °C
THERMAL RESISTANCE RATINGS (Note 1)
Parameter Symbol Value Unit
JunctiontoAmbient Steady State RqJA 458 °C/W
JunctiontoLead Steady State RqJL 252
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface mounted on FR4 board using min pad size
(Cu area = 0.155 in sq [1 oz] including traces).
SOT363
CASE 419B
STYLE 26
MARKING DIAGRAM &
PIN ASSIGNMENT
www.onsemi.com
TE MG
G
1
6
1
TE = Device Code
M = Date Code
G= PbFree Package
D1 G2 S2
S1 G1 D2
(Note: Microdot may be in either location)
V(BR)DSS RDS(on) TYP ID Max
30 V
1.0 W @ 4.0 V
1.5 W @ 2.5 V
250 mA
Device Package Shipping
ORDERING INFORMATION
NTJD4001NT1G SOT363
(PbFree)
3000 / Tape &
Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Top View
SOT363
SC88 (6 LEADS)
D1
G2
S2
S1
G1
6
5
4
1
2
3
D2
NVTJD4001NT1G SOT363
(PbFree)
3000 / Tape &
Reel
www onsem' com
NTJD4001N, NVTJD4001N
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2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 100 mA30 V
DraintoSource Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ56 mV/ °C
Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 30 V 1.0 mA
GatetoSource Leakage Current IGSS VDS = 0 V, VGS = ±10 V±1.0 mA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 100 mA0.8 1.2 1.5 V
Gate Threshold Temperature
Coefficient
VGS(TH)/TJ3.2 mV/ °C
DraintoSource On Resistance RDS(on) VGS = 4.0 V, ID = 10 mA 1.0 1.5 W
VGS = 2.5 V, ID = 10 mA 1.5 2.5
Forward Transconductance gFS VDS = 3.0 V, ID = 10 mA 80 mS
CHARGES AND CAPACITANCES
Input Capacitance CISS VGS = 0 V, f = 1.0 MHz,
VDS = 5.0 V
20 33 pF
Output Capacitance COSS 19 32
Reverse Transfer Capacitance CRSS 7.25 12
Total Gate Charge QG(TOT) VGS = 5.0 V, VDS = 24 V,
ID = 0.1 A
0.9 1.3 nC
Threshold Gate Charge QG(TH) 0.2
GatetoSource Charge QGS 0.3
GatetoDrain Charge QGD 0.2
SWITCHING CHARACTERISTICS (Note 3)
TurnOn Delay Time td(ON) VGS = 4.5 V, VDD = 5.0 V,
ID = 10 mA, RG = 50 W
17 ns
Rise Time tr 23
TurnOff Delay Time td(OFF) 94
Fall Time tf 82
DRAINSOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD VGS = 0 V,
IS = 10 mA
TJ = 25°C 0.65 0.7 V
TJ = 125°C 0.45
Reverse Recovery Time tRR VGS = 0 V, dIS/dt = 8.0 A/ms,
IS = 10 mA
12.4 ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: pulse width 300 ms, duty cycle 2%.
3. Switching characteristics are independent of operating junction temperatures.
12510 / 25%:
NTJD4001N, NVTJD4001N
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3
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
0
0.2
0.1
1.20.4
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
ID, DRAIN CURRENT (AMPS)
0.06
0.02
0
Figure 1. OnRegion Characteristics
1.2 21.6 2.2
0.1
0.06
0.02
1.4
0
1
Figure 2. Transfer Characteristics
VGS, GATETOSOURCE VOLTAGE (VOLTS)
0.5
0.25
Figure 3. OnResistance vs. Drain Current and
Temperature
ID, DRAIN CURRENT (AMPS)
RDS(on), DRAINTOSOURCE RESISTANCE (W)
ID, DRAIN CURRENT (AMPS)
Figure 4. OnResistance vs. Drain Current and
Gate Voltage
50 025 25
1.4
1.2
1
0.8
0
50 125100
Figure 5. OnResistance Variation with
Temperature
TJ, JUNCTION TEMPERATURE (°C)
TJ = 25°C
1.25
TJ = 55°C
TJ = 125°C
75 150
ID = 0.01 A
VGS = 10 V
RDS(on), DRAINTOSOURCE
RESISTANCE (NORMALIZED)
0.8
25°C
2
1.5 V
0.005 0.205
Figure 6. DraintoSource Leakage Current
vs. Voltage
1.75 V
2 V
2.5 V
21.6
VDS = 5 V
0.75
VGS = 2.75 V
VGS = 10 V to 3 V
0.04
0.08
0.12
0.08
0.04
1.8
TJ = 125°C
VGS = 10 V
TJ = 55°C
TJ = 25°C
1.0
1.8
1.6
030
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
10000
10
IDSS, LEAKAGE (nA)
1000
100
10 15
TJ = 150°C
TJ = 125°C
5
VGS = 0 V
0.055 0.105 0.155
0.5
0.25
ID, DRAIN CURRENT (AMPS)
RDS(on), DRAINTOSOURCE RESISTANCE (W)
1.25
0.005 0.205
0.75
VGS = 10 V
TJ = 25°C
1.0
0.055 0.105 0.155
VGS = 4.5 V
0.6
0.4
0.2
20 25
0.18
0.16
0.14 2.25 V
NTJD4001N, NVTJD4001N
www.onsemi.com
4
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
VDS = 0 V VGS = 0 V
010 10
30
20
10
0
25
GATETOSOURCE OR DRAINTOSOURCE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
0 0.2
4
1
0
QG, TOTAL GATE CHARGE (nC)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
TJ = 25°C
Coss
Ciss
Crss
ID = 0.1 A
TJ = 25°C
50
0.6
2
3
QGD
QGS
5
40
5
VGS VDS
15 0.4 1
0.65
0.02
0
VSD, SOURCETODRAIN VOLTAGE (VOLTS)
IS, SOURCE CURRENT (AMPS)
VGS = 0 V
TJ = 25°C
0.7 0.75
0.1
Figure 7. Capacitance Variation
Figure 8. GatetoSource Voltage vs. Total
Gate Charge
Figure 9. Diode Forward Voltage vs. Current
50.8
QG
0.5 0.60.55
0.04
0.06
0.08
20
Crss
Ciss
r(t), EFFECTIVE TRANSIENT THERMAL RESPONSE
PULSE TIME t,(s)
10
1000
SINGLE PULSE
100 10001010.10.010.000001
1
0.2
D = 0.5
0.01
0.02
0.1
0.05
Figure 10. Thermal Response
100
0.0010.00010.00001
DIM A1 am azt can mm mm nmz am an 025 mm nuns mm: can: Mm 200 22.: com um was mches mmaucm and lhe am «he thls tn a num
NTJD4001N, NVTJD4001N
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5
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B01 OBSOLETE, NEW STANDARD 419B02.
E0.2 (0.008) MM
123
D
e
A1
A
A3
C
L
654
E
b6 PL
SC88/SC706/SOT363
CASE 419B02
ISSUE W
DIM MIN NOM MAX
MILLIMETERS
A0.80 0.95 1.10
A1 0.00 0.05 0.10
A3
b0.10 0.21 0.30
C0.10 0.14 0.25
D1.80 2.00 2.20
0.031 0.037 0.043
0.000 0.002 0.004
0.004 0.008 0.012
0.004 0.005 0.010
0.070 0.078 0.086
MIN NOM MAX
INCHES
0.20 REF 0.008 REF
HE
HE
E1.15 1.25 1.35
e0.65 BSC
L0.10 0.20 0.30
2.00 2.10 2.20
0.045 0.049 0.053
0.026 BSC
0.004 0.008 0.012
0.078 0.082 0.086
ǒmm
inchesǓ
SCALE 20:1
0.65
0.025
0.65
0.025
0.50
0.0197
0.40
0.0157
1.9
0.0748
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
STYLE 26:
PIN 1. SOURCE 1
2. GATE 1
3. DRAIN 2
4. SOURCE 2
5. GATE 2
6. DRAIN 1
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