MMBT,SMMBT2907AL Datasheet by ON Semiconductor

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W L 0N Semiconductor® www.0nsemi.com 3 g
© Semiconductor Components Industries, LLC, 2015
October, 2016 − Rev. 15 1Publication Order Number:
MMBT2907ALT1/D
MMBT2907AL,
SMMBT2907AL
General Purpose Transistors
PNP Silicon
Features
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
CollectorEmitter Voltage VCEO −60 Vdc
CollectorBase Voltage VCBO −60 Vdc
EmitterBase Voltage VEBO −5.0 Vdc
Collector Current − Continuous IC−600 mAdc
Collector Current − Peak (Note 3) ICM −1200 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation − FR−5 Board
(Note 1) @TA = 25°C
Derate above 25°C
PD225
1.8 mW
mW/°C
Thermal Resistance, Junction−to−Ambient RJA 556 °C/W
Total Device Dissipation − Alumina
Substrate, (Note 2) @TA = 25°C
Derate above 25°C
PD300
2.4 mW
mW/°C
Thermal Resistance, Junction−to−Ambient RJA 417 °C/W
Total Device Dissipation − Heat Spreader
or equivalent, (Note 4) @TA = 25°CPD350 mW
Thermal Resistance, Junction−to−Ambient RJA 357 °C/W
Junction and Storage Temperature TJ, Tstg 55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
3. Reference SOA curve.
4. Heat Spreader or equivalent = 450 mm2, 2 oz.
2F = Device Code
M = Date Code*
G= Pb−Free Package
www.onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
Device Package Shipping
ORDERING INFORMATION
MMBT2907ALT3G
SMMBT2907ALT3G SOT−23
(Pb−Free)
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
MMBT2907ALT1G
SMMBT2907ALT1G SOT−23
(Pb−Free)
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
3000 / Tape &
Reel
10,000 / Tape &
Reel
SOT−23 (TO−236AB)
CASE 318
STYLE 6
MARKING DIAGRAM
1
2
1
3
2F M G
G
U“ Uni? 4L: : AL__
MMBT2907AL, SMMBT2907AL
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 5)
(IC = −1.0 mAdc, IB = 0)
(IC = −10 mAdc, IB = 0)
V(BR)CEO −60
−60
Vdc
CollectorBase Breakdown Voltage (IC = −10 Adc, IE = 0) V(BR)CBO −60 − Vdc
EmitterBase Breakdown Voltage (IE = −10 Adc, IC = 0) V(BR)EBO −5.0 − Vdc
Collector Cutoff Current (VCE = −30 Vdc, VEB(off) = −0.5 Vdc) ICEX −50 nAdc
Collector Cutoff Current
(VCB = −50 Vdc, IE = 0)
(VCB = −50 Vdc, IE = 0, TA = 125°C)
ICBO
−0.010
−10
Adc
Base Cutoff Current (VCE = −30 Vdc, VEB(off) = −0.5 Vdc) IBL −50 nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = −0.1 mAdc, VCE = −10 Vdc)
(IC = −1.0 mAdc, VCE = −10 Vdc)
(IC = −10 mAdc, VCE = −10 Vdc)
(IC = −150 mAdc, VCE = −10 Vdc)
(IC = −500 mAdc, VCE = −10 Vdc) (Note 5)
hFE 75
100
100
100
50
300
CollectorEmitter Saturation Voltage (Note 5)
(IC = −150 mAdc, IB = −15 mAdc) (Note 5)
(IC = −500 mAdc, IB = −50 mAdc)
VCE(sat)
−0.4
−1.6
Vdc
BaseEmitter Saturation Voltage (Note 5)
(IC = −150 mAdc, IB = −15 mAdc)
(IC = −500 mAdc, IB = −50 mAdc)
VBE(sat)
−1.3
−2.6
Vdc
SMALL−SIGNAL CHARACTERISTICS
CurrentGain − Bandwidth Product (Notes 5, 6),
(IC = −50 mAdc, VCE = −20 Vdc, f = 100 MHz) fT200 − MHz
Output Capacitance (VCB = −10 Vdc, IE = 0, f = 1.0 MHz) Cobo 8.0 pF
Input Capacitance (VEB = −2.0 Vdc, IC = 0, f = 1.0 MHz) Cibo − 30
SWITCHING CHARACTERISTICS
Turn−On Time (VCC = −30 Vdc, IC = −150 mAdc,
IB1 = −15 mAdc)
ton − 45
ns
Delay Time td− 10
Rise Time tr− 40
Turn−Off Time (VCC = −6.0 Vdc, IC = −150 mAd
c,
IB1 = IB2 = −15 mAdc)
(VCC = −6.0 Vdc, IC = −150 mAd
c,
IB1 = IB2 = −15 mAdc)
toff − 100
Storage Time ts− 80
Fall Time tf− 30
5. Pulse Test: Pulse Width v 300 s, Duty Cycle v 2.0%.
6. fT is defined as the frequency at which |hfe| extrapolates to unity.
00
-16 V
200 ns
50
1.0 k
200
-30 V
TO OSCILLOSCOPE
RISE TIME 5.0 ns
+15 V -6.0 V
1.0 k 37
50 1N916
1.0 k
200 ns
-30 V
TO OSCILLOSCOPE
RISE TIME 5.0 ns
INPUT
Zo = 50
PRF = 150 PPS
RISE TIME 2.0 ns
P.W. < 200 ns
INPUT
Zo = 50
PRF = 150 PPS
RISE TIME 2.0 ns
P.W. < 200 ns
Figure 1. Delay and Rise Time Test Circuit Figure 2. Storage and Fall Time Test Circuit
«a @ VEEM : n v
MMBT2907AL, SMMBT2907AL
www.onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 3. DC Current Gain
IC, COLLECTOR CURRENT (mA)
100
1000
10
1.0
TJ = 150°C
25°C
-55°C
hFE, DC CURRENT GAIN
10 100 1000
VCE = 10 V
Figure 4. Collector Saturation Region
IB, BASE CURRENT (mA)
-0.4
-0.6
-0.8
-1.0
-0.2
V , COLLECTOR-EMITTER VOLTAGE (VOLTS)
0
CE
IC = -1.0 mA
-0.005
-10 mA
-0.01
-100 mA -500 mA
-0.02 -0.03 -0.05 -0.07 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50
Figure 5. Turn−On Time
IC, COLLECTOR CURRENT
300
-5.0
Figure 6. Turn−Off Time
IC, COLLECTOR CURRENT (mA)
-5.0
t, TIME (ns)
t, TIME (ns)
200
100
70
50
30
20
10
7.0
5.0
3.0
-7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500
tr
2.0 V
td @ VBE(off) = 0 V
VCC = -30 V
IC/IB = 10
TJ = 25°C
500
300
100
70
50
30
20
10
7.0
5.0
-7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500
200
tf
ts = ts - 1/8 tf
VCC = -30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
MMBT2907AL, SMMBT2907AL
www.onsemi.com
4
TYPICAL SMALL−SIGNAL Characteristics
NOISE FIGURE
VCE = 10 Vdc, TA = 25°C
Figure 7. Frequency Effects
f, FREQUENCY (kHz)
10
0.01
Figure 8. Source Resistance Effects
Rs, SOURCE RESISTANCE (OHMS)
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
f = 1.0 kHz
IC = -50 A
-100 A
-500 A
-1.0 mA
Rs = OPTIMUM SOURCE RESISTANCE
8.0
6.0
4.0
2.0
0
0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
10
8.0
6.0
4.0
2.0
050 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k
IC = -1.0 mA, Rs = 430
-500 A, Rs = 560
-50 A, Rs = 2.7 k
-100 A, Rs = 1.6 k
Figure 9. Capacitances
REVERSE VOLTAGE (VOLTS)
30
Figure 10. Current−Gain − Bandwidth Product
IC, COLLECTOR CURRENT (mA)
C, CAPACITANCE (pF)
-0.1
2.0
fT, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz)
20
10
7.0
5.0
3.0
-0.2 -0.3 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30
400
300
200
100
80
60
40
30
20
-1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 -1000
Ceb
Ccb
VCE = -20 V
TJ = 25°C
Figure 11. Collector Emitter Saturation Voltage
vs. Collector Current Figure 12. Base Emitter Saturation Voltage vs.
Collector Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
10.10.010.001
0.01
0.1
1
10.10.010.001
0.2
0.3
0.5
0.7
0.8
1.0
1.1
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
IC/IB = 10
150°C
55°C
25°C
0.4
0.6
0.9
IC/IB = 10
150°C
−55°C
25°C
MMBT2907AL, SMMBT2907AL
www.onsemi.com
5
TYPICAL SMALL−SIGNAL Characteristics
NOISE FIGURE
VCE = 10 Vdc, TA = 25°C
Figure 13. Base Emitter Voltage vs. Collector
Current
IC, COLLECTOR CURRENT (A)
10.10.010.001
0.2
0.3
0.5
0.6
0.7
0.9
1.1
1.2
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
0.4
0.8
1.0
VCE = 1 V
150°C
−55°C
25°C
Figure 14. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
RVC for VCE(sat)
COEFFICIENT (mV/ °C)
+0.5
0
-0.5
-1.0
-1.5
-2.0
-2.5
-0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500
RVB for VBE
Figure 15. Safe Operating Area
VCE (Vdc)
1001010.10.01
0.001
0.01
0.1
1
10
IC (A)
Single Pulse Test
@ TA = 25°C
100 ms
1 s 10 ms 1 ms 100 s10 s
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SOT23 (TO236)
CASE 31808
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
D
A1
3
12
1
XXXMG
G
XXX = Specific Device Code
M = Date Code
G= PbFree Package
*This information is generic. Please refer to
device data sheet for actual part marking.
PbFree indicator, “G” or microdot “ G”,
may or may not be present.
GENERIC
MARKING DIAGRAM*
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
SOLDERING FOOTPRINT
VIEW C
L
0.25
L1
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.000
b0.37 0.44 0.50 0.015
c0.08 0.14 0.20 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.30 0.43 0.55 0.012
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
NOM MAX
L1
H
STYLE 22:
PIN 1. RETURN
2. OUTPUT
3. INPUT
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 7:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
STYLE 9:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 10:
PIN 1. DRAIN
2. SOURCE
3. GATE
STYLE 11:
PIN 1. ANODE
2. CATHODE
3. CATHODEANODE
STYLE 12:
PIN 1. CATHODE
2. CATHODE
3. ANODE
STYLE 13:
PIN 1. SOURCE
2. DRAIN
3. GATE
STYLE 14:
PIN 1. CATHODE
2. GATE
3. ANODE
STYLE 15:
PIN 1. GATE
2. CATHODE
3. ANODE
STYLE 16:
PIN 1. ANODE
2. CATHODE
3. CATHODE
STYLE 17:
PIN 1. NO CONNECTION
2. ANODE
3. CATHODE
STYLE 18:
PIN 1. NO CONNECTION
2. CATHODE
3. ANODE
STYLE 19:
PIN 1. CATHODE
2. ANODE
3. CATHODEANODE
STYLE 23:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 20:
PIN 1. CATHODE
2. ANODE
3. GATE
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
STYLE 1 THRU 5:
CANCELLED
STYLE 24:
PIN 1. GATE
2. DRAIN
3. SOURCE
STYLE 25:
PIN 1. ANODE
2. CATHODE
3. GATE
STYLE 26:
PIN 1. CATHODE
2. ANODE
3. NO CONNECTION
STYLE 27:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.027
c
0−−− 10 0 −−− 10
T°°°°
T
3X
TOP VIEW
SIDE VIEW
END VIEW
2.90
0.80
DIMENSIONS: MILLIMETERS
0.90
PITCH
3X
3X 0.95
RECOMMENDED
STYLE 28:
PIN 1. ANODE
2. ANODE
3. ANODE
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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SOT23 (TO236)
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1
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