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© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 12 1Publication Order Number:
MJE2955T/D
MJE2955T (PNP),
MJE3055T (NPN)
Complementary Silicon
Plastic Power Transistors
These devices are designed for use in general−purpose amplifier and
switching applications.
Features
High Current Gain − Bandwidth Product
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage VCEO 60 Vdc
Collector−Base Voltage VCB 70 Vdc
Emitter−Base Voltage VEB 5.0 Vdc
Collector Current IC10 Adc
Base Current IB6.0 Adc
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD
(Note 1) 75
0.6 W
W/°C
Operating and Storage Junction
Temperature Range TJ, Tstg 55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Safe Area Curves are indicated by Figure 1. Both limits are applicable and
must be observed.
THERMAL CHARACTERISTICS
Characteristics Symbol Max Unit
Thermal Resistance, Junction−to−Case RqJC 1.67 °C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
10 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60 VOLTS − 75 WATTS
www.onsemi.com
MARKING DIAGRAM
MJExx55T = Device Code
xx = 29 or 30
G = Pb−Free Package
A = Assembly Location
Y = Year
WW = Work Week
MJExx55TG
AY WW
Device Package Shipping
ORDERING INFORMATION
MJE2955TG TO−220
(Pb−Free)
50 Units / Rail
MJE3055TG TO−220
(Pb−Free)
50 Units / Rail
1
BASE
EMITTER 3
COLLECTOR 2, 4
1
BASE
EMITTER 3
COLLECTOR 2, 4
PNP NPN
TO−220
CASE 221A−09
STYLE 1
123
4
MJE2955T (PNP), MJE3055T (NPN)
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2)
(IC = 200 mAdc, IB = 0) VCEO(sus) 60 Vdc
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0) ICEO 700 mAdc
Collector Cutoff Current
(VCE = 70 Vdc, VEB(off) = 1.5 Vdc)
(VCE = 70 Vdc, VEB(off) = 1.5 Vdc, TC = 150°C)
ICEX
1.0
5.0
mAdc
Collector Cutoff Current
(VCB = 70 Vdc, IE = 0)
(VCB = 70 Vdc, IE = 0, TC = 150°C)
ICBO
1.0
10
mAdc
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0) IEBO 5.0 mAdc
ON CHARACTERISTICS
DC Current Gain (Note 2)
(IC = 4.0 Adc, VCE = 4 0 Vdc)
(IC = 10 Adc, VCE = 4.0 Vdc)
hFE 20
5.0 100
Collector−Emitter Saturation Voltage (Note 2)
(IC = 4.0 Adc, IB = 0.4 Adc)
(IC = 10 Adc, IB = 3.3 Adc)
VCE(sat)
1.1
8.0
Vdc
Base−Emitter On Voltage (Note 2)
(IC = 4.0 Adc, VCE = 4.0 Vdc) VBE(on) 1.8 Vdc
DYNAMIC CHARACTERISTICS
Current−Gain−Bandwidth Product
(IC = 500 mAdc, VCE = 10 Vdc, f = 500 kHz) fT2.0 MHz
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width 300 ms, Duty Cycle 20%.
MJanssT MJE2955T Vaasm} @ lo ‘a V@V
MJE2955T (PNP), MJE3055T (NPN)
www.onsemi.com
3
10
5.0
Figure 1. Active−Region Safe Operating Area
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
5.0
2.0
1.0
0.2
0.1 20 30
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMALLY LIMITED
TC = 25°C (D = 0.1)
IC, COLLECTOR CURRENT (AMP)
dc
7.0 10
5.0 ms 1.0ms
50 60
0.5
7.0
3.0
0.7
0.3
TJ = 150°C
100msThere are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 1 is based on TJ(pk) = 150°C. TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided
TJ(pk) 150°C. At high case temperatures, thermal
limitations will reduce the power that can be handled to
values less than the limitations imposed by second
breakdown.
0
TC, CASE TEMPERATURE (°C)
75 100 17525 50
Figure 2. DC Current Gain
125 150
500
0.01
Figure 3. Power Derating
IC, COLLECTOR CURRENT (AMP)
5.0
0.02 0.05 0.1 0.2 1.0 2.0 100.5
300
200
100
50
30
90
0
80
60
40
70
50
hFE, DC CURRENT GAIN
20
10
5.0
TJ = 150°C
25°C
-55°C
VCE = 2.0 V
PD, POWER DISSIPATION (WATTS)
30
10
20
MJE3055T
MJE2955T
0.1
IC, COLLECTOR CURRENT (AMP)
0.5 1.0 100.2 0.3 2.0 3.0
Figure 4. “On” Voltages
2.0
0
1.6
1.2
0.8
V, VOLTAGE (VOLTS)
0.4
5.0
TJ = 25°C
VBE(sat) @ IC/IB = 10
VBE @ VCE = 3.0 V
VCE(sat) @ IC/IB = 10
MJE2955T
0.1
IC, COLLECTOR CURRENT (AMP)
0.5 1.0 100.2 0.3 2.0 3.0
1.4
0
1.2
1.0
0.8
V, VOLTAGE (VOLTS)
0.4
5.0
TJ = 25°C
VBE(sat) @ IC/IB = 10
VBE @ VCE = 2.0 V
VCE(sat) @ IC/IB = 10
MJE3055T
0.6
0.2
4L T W Va (>7 L
MJE2955T (PNP), MJE3055T (NPN)
www.onsemi.com
4
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.415 9.66 10.53
C0.160 0.190 4.07 4.83
D0.025 0.038 0.64 0.96
F0.142 0.161 3.61 4.09
G0.095 0.105 2.42 2.66
H0.110 0.161 2.80 4.10
J0.014 0.024 0.36 0.61
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 --- 1.15 ---
Z--- 0.080 --- 2.04
B
Q
H
Z
L
V
G
N
A
K
F
123
4
D
SEATING
PLANE
−T−
C
S
T
U
R
J
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Phone: 81−3−5817−1050
MJE2955T/D
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