JFETs

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Voltage - Breakdown (V(BR)GSS)
Drain to Source Voltage (Vdss)
Current - Drain (Idss) @ Vds (Vgs=0)
Current Drain (Id) - Max
Input Capacitance (Ciss) (Max) @ Vds
Resistance - RDS(On)
Power - Max
Operating Temperature
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
TO-247-3 AC EP
IJW120R100T1FKSA1
JFET N-CH 1.2KV 26A TO247-3
Infineon Technologies
0
In Stock
6,860
Marketplace
Obsolete
Tube
Tube
Obsolete
N-Channel
1200 V
1200 V
1.5 µA @ 1200 V
26 A
1550pF @ 19.5V (VGS)
100 mOhms
190 W
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
PG-TO247-3
330
Marketplace
10 : £22.64000
Bulk
Bulk
Active
N-Channel
1200 V
1200 V
3.3 µA @ 1200 V
35 A
2000pF @ 19.5V (VGS)
70 mOhms
238 W
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
PG-TO247-3
JFET N-CH 1.2KV 35A TO247-3
IJW120R070T1FKSA1
JFET N-CH 1.2KV 35A TO247-3
Infineon Technologies
0
In Stock
Obsolete
Tube
Obsolete
N-Channel
1200 V
1200 V
3.3 µA @ 1200 V
35 A
2000pF @ 19.5V (VGS)
70 mOhms
238 W
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
PG-TO247-3
Showing
of 3

JFETs

Junction gate field-effect transistors (JFET) are devices used as electronically-controlled switches, amplifiers, or voltage-controlled resistors. A potential difference of the proper polarity applied between the gate and source terminals increases resistance to current flow, which means less current would flow in the channel between the source and drain terminals. JFETs do not need a biasing current due to a charge flowing through a semiconducting channel between source and drain terminals.