11A (Ta), 55A (Tc) Single FETs, MOSFETs

Results: 6
Manufacturer
Infineon TechnologiesonsemiPanjit International Inc.
Series
-Automotive, AEC-Q101OptiMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveObsolete
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
40 V80 V100 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V6V, 10V
Rds On (Max) @ Id, Vgs
11.6mOhm @ 10A, 10V12.3mOhm @ 33A, 10V13mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA3V @ 250µA3.5V @ 33µA
Gate Charge (Qg) (Max) @ Vgs
8 nC @ 4.5 V25 nC @ 10 V56 nC @ 10 V
Vgs (Max)
±16V±20V±25V
Input Capacitance (Ciss) (Max) @ Vds
1680 pF @ 25 V1870 pF @ 40 V2858 pF @ 25 V
Power Dissipation (Max)
2.5W (Ta), 63W (Tc)2.5W (Ta), 66W (Tc)3.8W (Ta), 94W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
5-DFN (5x6) (8-SOFL)DFN3333-8PG-TDSON-8-1
Package / Case
8-PowerTDFN8-PowerTDFN, 5 Leads8-PowerVDFN
Stocking Options
Environmental Options
Media
Marketplace Product
6Results
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Showing
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
PG-TDSON-8-1
BSC123N08NS3GATMA1
MOSFET N-CH 80V 11A/55A TDSON
Infineon Technologies
33,165
In Stock
1 : £1.18000
Cut Tape (CT)
5,000 : £0.39433
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
11A (Ta), 55A (Tc)
6V, 10V
12.3mOhm @ 33A, 10V
3.5V @ 33µA
25 nC @ 10 V
±20V
1870 pF @ 40 V
-
2.5W (Ta), 66W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TDSON-8-1
8-PowerTDFN
40V P-CHANNEL ENHANCEMENT MODE M
PJQ4453EP-AU_R2_002A1
40V P-CHANNEL ENHANCEMENT MODE M
Panjit International Inc.
4,960
In Stock
1 : £0.90000
Cut Tape (CT)
5,000 : £0.23952
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
11A (Ta), 55A (Tc)
4.5V, 10V
11.6mOhm @ 10A, 10V
2.5V @ 250µA
56 nC @ 10 V
±25V
2858 pF @ 25 V
-
2.5W (Ta), 63W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
DFN3333-8
8-PowerVDFN
5-DFN, 8-SO Flat Lead
NVMFS6B14NLT3G
MOSFET N-CH 100V 11A/55A 5DFN
onsemi
0
In Stock
139,500
Marketplace
300 : £1.58460
Tape & Reel (TR)
5,000 : £0.68397
Tape & Reel (TR)
-
Tape & Reel (TR)
Tape & Reel (TR)
Obsolete
N-Channel
MOSFET (Metal Oxide)
100 V
11A (Ta), 55A (Tc)
4.5V, 10V
13mOhm @ 20A, 10V
3V @ 250µA
8 nC @ 4.5 V
±16V
1680 pF @ 25 V
-
3.8W (Ta), 94W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
5-DFN, 8-SO Flat Lead
NVMFS6B14NLWFT1G
MOSFET N-CH 100V 11A/55A 5DFN
onsemi
0
In Stock
Obsolete
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Obsolete
N-Channel
MOSFET (Metal Oxide)
100 V
11A (Ta), 55A (Tc)
4.5V, 10V
13mOhm @ 20A, 10V
3V @ 250µA
8 nC @ 4.5 V
±16V
1680 pF @ 25 V
-
3.8W (Ta), 94W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
5-DFN, 8-SO Flat Lead
NVMFS6B14NLT1G
MOSFET N-CH 100V 11A/55A 5DFN
onsemi
0
In Stock
Obsolete
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Obsolete
N-Channel
MOSFET (Metal Oxide)
100 V
11A (Ta), 55A (Tc)
4.5V, 10V
13mOhm @ 20A, 10V
3V @ 250µA
8 nC @ 4.5 V
±16V
1680 pF @ 25 V
-
3.8W (Ta), 94W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
5-DFN, 8-SO Flat Lead
NVMFS6B14NLWFT3G
MOSFET N-CH 100V 11A/55A 5DFN
onsemi
0
In Stock
Active
Tape & Reel (TR)
Active
N-Channel
MOSFET (Metal Oxide)
100 V
11A (Ta), 55A (Tc)
4.5V, 10V
13mOhm @ 20A, 10V
3V @ 250µA
8 nC @ 4.5 V
±16V
1680 pF @ 25 V
-
3.8W (Ta), 94W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
Showing
of 6

11A (Ta), 55A (Tc) Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.