TO-247-3 Variant Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
IXTX32P60P MOSFET P-CH 600V 32A PLUS247-3 IXYS	746 In Stock	1 : £19.86000 Tube	PolarP™	Tube	Active	P-Channel	MOSFET (Metal Oxide)	600 V	32A (Tc)	10V	350mOhm @ 16A, 10V	4V @ 1mA	196 nC @ 10 V	±20V	11100 pF @ 25 V	-	890W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PLUS247™-3	TO-247-3 Variant
IXTX40P50P MOSFET P-CH 500V 40A PLUS247-3 IXYS	706 In Stock	1 : £19.86000 Tube	PolarP™	Tube	Active	P-Channel	MOSFET (Metal Oxide)	500 V	40A (Tc)	10V	230mOhm @ 20A, 10V	4V @ 1mA	205 nC @ 10 V	±20V	11500 pF @ 25 V	-	890W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PLUS247™-3	TO-247-3 Variant
IXTX200N10L2 MOSFET N-CH 100V 200A PLUS247-3 IXYS	408 In Stock	1 : £30.37000 Tube	Linear L2™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	200A (Tc)	10V	11mOhm @ 100A, 10V	4.5V @ 3mA	540 nC @ 10 V	±20V	23000 pF @ 25 V	-	1040W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PLUS247™-3	TO-247-3 Variant
IXFX520N075T2 MOSFET N-CH 75V 520A PLUS247-3 IXYS	200 In Stock	1 : £14.96000 Tube	HiPerFET™, TrenchT2™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	75 V	520A (Tc)	10V	2.2mOhm @ 100A, 10V	5V @ 8mA	545 nC @ 10 V	±20V	41000 pF @ 25 V	-	1250W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PLUS247™-3	TO-247-3 Variant
IXFX120N25P MOSFET N-CH 250V 120A PLUS247-3 IXYS	370 In Stock	1 : £15.77000 Tube	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	250 V	120A (Tc)	10V	24mOhm @ 60A, 10V	5V @ 4mA	185 nC @ 10 V	±20V	8000 pF @ 25 V	-	700W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PLUS247™-3	TO-247-3 Variant
IXFX100N65X2 MOSFET N-CH 650V 100A PLUS247-3 IXYS	525 In Stock 1,140 Factory	1 : £17.30000 Tube	HiPerFET™, Ultra X2	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	100A (Tc)	10V	30mOhm @ 50A, 10V	5.5V @ 4mA	180 nC @ 10 V	±30V	11300 pF @ 25 V	-	1040W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PLUS247™-3	TO-247-3 Variant
IXTH1N170DHV MOSFET N-CH 1700V 1A TO247HV IXYS	616 In Stock 900 Factory	1 : £17.75000 Tube	Depletion	Tube	Active	N-Channel, Depletion Mode	MOSFET (Metal Oxide)	1700 V	1A (Tj)	0V	16Ohm @ 500mA, 0V	4.5V @ 250µA	47 nC @ 5 V	±20V	3090 pF @ 25 V	-	290W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247HV	TO-247-3 Variant
IXFX98N50P3 MOSFET N-CH 500V 98A PLUS247-3 IXYS	619 In Stock	1 : £17.95000 Tube	HiPerFET™, Polar3™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	98A (Tc)	10V	50mOhm @ 500mA, 10V	5V @ 8mA	197 nC @ 10 V	±30V	13100 pF @ 25 V	-	1300W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PLUS247™-3	TO-247-3 Variant
IXTX90P20P MOSFET P-CH 200V 90A PLUS247-3 IXYS	163 In Stock	1 : £19.86000 Tube	PolarP™	Tube	Active	P-Channel	MOSFET (Metal Oxide)	200 V	90A (Tc)	10V	44mOhm @ 22A, 10V	4V @ 1mA	205 nC @ 10 V	±20V	12000 pF @ 25 V	-	890W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PLUS247™-3	TO-247-3 Variant
IXFX230N20T MOSFET N-CH 200V 230A PLUS247-3 IXYS	241 In Stock	1 : £23.36000 Tube	HiPerFET™, Trench	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	230A (Tc)	10V	7.5mOhm @ 60A, 10V	5V @ 8mA	378 nC @ 10 V	±20V	28000 pF @ 25 V	-	1670W (Tc)	-	-	-	Through Hole	PLUS247™-3	TO-247-3 Variant
IXFX40N90P MOSFET N-CH 900V 40A PLUS247-3 IXYS	677 In Stock	1 : £24.48000 Tube	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	900 V	40A (Tc)	10V	230mOhm @ 20A, 10V	6.5V @ 1mA	230 nC @ 10 V	±30V	14000 pF @ 25 V	-	960W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PLUS247™-3	TO-247-3 Variant
IXTX120P20T MOSFET P-CH 200V 120A PLUS247-3 IXYS	317 In Stock	1 : £27.05000 Tube	TrenchP™	Tube	Active	P-Channel	MOSFET (Metal Oxide)	200 V	120A (Tc)	-	30mOhm @ 60A, 10V	4.5V @ 250µA	740 nC @ 10 V	-	73000 pF @ 25 V	-	-	-	-	-	Through Hole	PLUS247™-3	TO-247-3 Variant
IXFX360N15T2 MOSFET N-CH 150V 360A PLUS247-3 IXYS	402 In Stock	1 : £27.47000 Tube	HiPerFET™, TrenchT2™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	150 V	360A (Tc)	10V	4mOhm @ 60A, 10V	5V @ 8mA	715 nC @ 10 V	±20V	47500 pF @ 25 V	-	1670W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PLUS247™-3	TO-247-3 Variant
IXFX300N20X3 MOSFET N-CH 200V 300A PLUS247-3 IXYS	954 In Stock	1 : £29.14000 Tube	HiPerFET™, Ultra X3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	300A (Tc)	10V	4mOhm @ 150A, 10V	4.5V @ 8mA	375 nC @ 10 V	±20V	23800 pF @ 25 V	-	1250W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PLUS247™-3	TO-247-3 Variant
IXFX210N30X3 MOSFET N-CH 300V 210A PLUS247-3 IXYS	531 In Stock	1 : £29.14000 Tube	HiPerFET™, Ultra X3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	300 V	210A (Tc)	10V	5.5mOhm @ 105A, 10V	4.5V @ 8mA	375 nC @ 10 V	±20V	24200 pF @ 25 V	-	1250W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PLUS247™-3	TO-247-3 Variant
IXFX240N25X3 MOSFET N-CH 250V 240A PLUS247-3 IXYS	354 In Stock	1 : £29.14000 Tube	HiPerFET™, Ultra X3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	250 V	240A (Tc)	10V	5mOhm @ 120A, 10V	4.5V @ 8mA	345 nC @ 10 V	±20V	23800 pF @ 25 V	-	1250W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PLUS247™-3	TO-247-3 Variant
IXTX60N50L2 MOSFET N-CH 500V 60A PLUS247-3 IXYS	2,165 In Stock	1 : £31.93000 Tube	Linear L2™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	60A (Tc)	10V	100mOhm @ 30A, 10V	4.5V @ 250µA	610 nC @ 10 V	±30V	24000 pF @ 25 V	-	960W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PLUS247™-3	TO-247-3 Variant
IXTX90N25L2 MOSFET N-CH 250V 90A PLUS247-3 IXYS	1,549 In Stock	1 : £31.93000 Tube	Linear L2™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	250 V	90A (Tc)	10V	33mOhm @ 45A, 10V	4.5V @ 3mA	640 nC @ 10 V	±20V	23000 pF @ 25 V	-	960W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PLUS247™-3	TO-247-3 Variant
IXTX110N20L2 MOSFET N-CH 200V 110A PLUS247-3 IXYS	842 In Stock 510 Factory	1 : £31.93000 Tube	Linear L2™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	110A (Tc)	10V	24mOhm @ 55A, 10V	4.5V @ 3mA	500 nC @ 10 V	±20V	23000 pF @ 25 V	-	960W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PLUS247™-3	TO-247-3 Variant
IXTH1N450HV MOSFET N-CH 4500V 1A TO247HV IXYS	272 In Stock	1 : £38.95000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	4500 V	1A (Tc)	10V	80Ohm @ 50mA, 10V	6V @ 250µA	46 nC @ 10 V	±20V	1700 pF @ 25 V	-	520W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247HV	TO-247-3 Variant
IXTH2N300P3HV MOSFET N-CH 3000V 2A TO247HV IXYS	140 In Stock	1 : £38.95000 Tube	Polar P3™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	3000 V	2A (Tc)	10V	21Ohm @ 1A, 10V	5V @ 250µA	73 nC @ 10 V	±20V	1890 pF @ 25 V	-	520W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247HV	TO-247-3 Variant
IXTX1R4N450HV MOSFET N-CH 4500V 1.4A TO247PLUS IXYS	205 In Stock	1 : £61.93000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	4500 V	1.4A (Tc)	10V	40Ohm @ 50mA, 10V	6V @ 250µA	88 nC @ 10 V	±20V	3300 pF @ 25 V	-	960W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247PLUS-HV	TO-247-3 Variant
IXTX4N300P3HV MOSFET N-CH 3000V 4A TO247PLUSHV IXYS	207 In Stock 810 Factory	1 : £65.30000 Tube	Polar P3™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	3000 V	4A (Tc)	10V	12.5Ohm @ 2A, 10V	5V @ 250µA	139 nC @ 10 V	±20V	3680 pF @ 25 V	-	960W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247PLUS-HV	TO-247-3 Variant
IXFX64N60P3 MOSFET N-CH 600V 64A PLUS247-3 IXYS	298 In Stock	1 : £13.66000 Tube	HiPerFET™, Polar3™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	64A (Tc)	10V	95mOhm @ 32A, 10V	5V @ 4mA	145 nC @ 10 V	±30V	9900 pF @ 25 V	-	1130W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PLUS247™-3	TO-247-3 Variant
IXFX44N80P MOSFET N-CH 800V 44A PLUS247-3 IXYS	515 In Stock	1 : £19.73000 Tube	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	44A (Tc)	10V	190mOhm @ 22A, 10V	5V @ 8mA	198 nC @ 10 V	±30V	12000 pF @ 25 V	-	1040W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PLUS247™-3	TO-247-3 Variant

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.

Single FET, MOSFETs

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