TO-226-3, TO-92-3 (TO-226AA) Single FETs, MOSFETs

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
MOSFET N-CH 60V 500MA TO92-3
onsemi
30,272
In Stock
1 : £0.31000
Bulk
-
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
60 V
500mA (Ta)
10V
5Ohm @ 200mA, 10V
3V @ 1mA
-
±20V
40 pF @ 10 V
-
830mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3(StandardBody),TO-226_straightlead
MOSFET N-CH 60V 230MA TO92-3
Microchip Technology
6,273
In Stock
1 : £0.39000
Bag
-
Bag
Active
N-Channel
MOSFET (Metal Oxide)
60 V
230mA (Tj)
5V, 10V
7.5Ohm @ 500mA, 10V
2.5V @ 1mA
-
±30V
60 pF @ 25 V
-
400mW (Ta), 1W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
TO-226-3, TO-92-3 (TO-226AA)
MOSFET TO92 N 60V 0.2A 5OHM 150C
onsemi
56,916
In Stock
1 : £0.45000
Bulk
-
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
60 V
200mA (Ta)
4.5V, 10V
5Ohm @ 500mA, 10V
3V @ 1mA
-
±20V
50 pF @ 25 V
-
400mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
ZVN4306A
MOSFET N-CH 200V 120MA TO92-3
Diodes Incorporated
2,475
In Stock
1 : £0.73000
Bulk
-
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
200 V
120mA (Ta)
2.6V, 5V
30Ohm @ 100mA, 5V
-
-
±20V
-
-
500mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-92
TO-226-3, TO-92-3 (TO-226AA)
ZVN4306A
MOSFET P-CH 45V 230MA E-LINE
Diodes Incorporated
10,569
In Stock
4,000
Factory
1 : £1.04000
Bulk
-
Bulk
Active
P-Channel
MOSFET (Metal Oxide)
45 V
230mA (Ta)
10V
14Ohm @ 200mA, 10V
3.5V @ 1mA
-
±20V
60 pF @ 10 V
-
700mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-92
TO-226-3, TO-92-3 (TO-226AA)
TO-226-3, TO-92-3 (TO-226AA)
MOSFET N-CH 60V 200MA TO92-3
onsemi
19,112
In Stock
1 : £0.37000
Bulk
-
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
60 V
200mA (Tc)
4.5V, 10V
5Ohm @ 500mA, 10V
3V @ 1mA
-
±20V
50 pF @ 25 V
-
400mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3(StandardBody),TO-226_straightlead
MOSFET N-CH 60V 300MA TO92-3
Microchip Technology
4,147
In Stock
1 : £0.37000
Bag
-
Bag
Active
N-Channel
MOSFET (Metal Oxide)
60 V
300mA (Tj)
5V, 10V
4Ohm @ 500mA, 10V
2.4V @ 1mA
-
±20V
50 pF @ 25 V
-
1W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3(StandardBody),TO-226_straightlead
MOSFET N-CH 60V 200MA TO92-3
Microchip Technology
2,057
In Stock
1 : £0.37000
Bag
-
Bag
Active
N-Channel
MOSFET (Metal Oxide)
60 V
200mA (Tj)
4.5V, 10V
5Ohm @ 500mA, 10V
3V @ 1mA
-
±30V
60 pF @ 25 V
-
1W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3(StandardBody),TO-226_straightlead
MOSFET N-CH 500V 30MA TO92-3
Microchip Technology
7,026
In Stock
1 : £0.44000
Bag
-
Bag
Active
N-Channel, Depletion Mode
MOSFET (Metal Oxide)
500 V
30mA (Tj)
0V
1000Ohm @ 500µA, 0V
-
-
±20V
10 pF @ 25 V
-
740mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3(StandardBody),TO-226_straightlead
MOSFET N-CH 60V 310MA TO92-3
Microchip Technology
5,508
In Stock
1 : £0.44000
Bag
-
Bag
Active
N-Channel
MOSFET (Metal Oxide)
60 V
310mA (Tj)
5V, 10V
5Ohm @ 500mA, 10V
2.5V @ 1mA
-
±30V
60 pF @ 25 V
-
1W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3(StandardBody),TO-226_straightlead
MOSFET P-CH 60V 250MA TO92-3
Microchip Technology
4,812
In Stock
1 : £0.47000
Bag
-
Bag
Active
P-Channel
MOSFET (Metal Oxide)
60 V
250mA (Tj)
5V, 10V
12Ohm @ 500mA, 10V
3.5V @ 1mA
-
±20V
60 pF @ 25 V
-
1W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3(StandardBody),TO-226_straightlead
MOSFET N-CH 500V 30MA TO92-3
Microchip Technology
3,266
In Stock
1 : £0.50000
Cut Tape (CT)
2,000 : £0.38002
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Active
N-Channel, Depletion Mode
MOSFET (Metal Oxide)
500 V
30mA (Tj)
0V
1000Ohm @ 500µA, 0V
-
-
±20V
10 pF @ 25 V
-
740mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3(StandardBody),TO-226_straightlead
MOSFET N-CH 60V 300MA TO92-3
Microchip Technology
1,141
In Stock
1 : £0.50000
Bag
-
Bag
Active
N-Channel
MOSFET (Metal Oxide)
60 V
300mA (Tj)
4.5V, 10V
2.5Ohm @ 500mA, 10V
2V @ 1mA
-
±20V
50 pF @ 25 V
-
740mW (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3(StandardBody),TO-226_straightlead
MOSFET N-CH 60V 230MA TO92-3
Microchip Technology
1,116
In Stock
1 : £0.50000
Bag
-
Bag
Active
N-Channel
MOSFET (Metal Oxide)
60 V
230mA (Tj)
5V, 10V
7.5Ohm @ 500mA, 10V
2.5V @ 250µA
-
±30V
50 pF @ 25 V
-
1W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3(StandardBody),TO-226_straightlead
MOSFET N-CH 300V 175MA TO92
Microchip Technology
10,613
In Stock
1 : £0.58000
Bag
-
Bag
Active
N-Channel, Depletion Mode
MOSFET (Metal Oxide)
300 V
175mA (Tj)
0V
12Ohm @ 150mA, 0V
-
-
±20V
300 pF @ 25 V
-
740mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-92 (TO-226)
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3(StandardBody),TO-226_straightlead
MOSFET N-CH 60V 350MA TO92-3
Microchip Technology
13,095
In Stock
1 : £0.59000
Bag
-
Bag
Active
N-Channel
MOSFET (Metal Oxide)
60 V
350mA (Tj)
5V, 10V
3Ohm @ 1A, 10V
2.4V @ 1mA
-
±20V
65 pF @ 25 V
-
1W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3(StandardBody),TO-226_straightlead
MOSFET P-CH 40V 175MA TO92-3
Microchip Technology
4,552
In Stock
1 : £0.65000
Cut Tape (CT)
2,000 : £0.49695
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Active
P-Channel
MOSFET (Metal Oxide)
40 V
175mA (Tj)
4.5V, 10V
6Ohm @ 500mA, 10V
2V @ 1mA
-
±20V
60 pF @ 25 V
-
740mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
MOSFET N-CH 600V 300MA TO92-3
STMicroelectronics
10,913
In Stock
1 : £0.67000
Cut Tape (CT)
2,000 : £0.17173
Tape & Box (TB)
Cut Tape (CT)
Tape & Box (TB)
Active
N-Channel
MOSFET (Metal Oxide)
600 V
300mA (Tc)
10V
15Ohm @ 400mA, 10V
4.5V @ 50µA
6.9 nC @ 10 V
±30V
94 pF @ 25 V
-
3W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3(StandardBody),TO-226_straightlead
MOSFET P-CH 40V 250MA TO92-3
Microchip Technology
911
In Stock
1 : £0.75000
Bag
-
Bag
Active
P-Channel
MOSFET (Metal Oxide)
40 V
250mA (Tj)
5V, 10V
8Ohm @ 500mA, 10V
3.5V @ 1mA
-
±20V
60 pF @ 25 V
-
1W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3(StandardBody),TO-226_straightlead
MOSFET N-CH 60V 350MA TO92-3
Microchip Technology
1,758
In Stock
1 : £0.77000
Bag
-
Bag
Active
N-Channel
MOSFET (Metal Oxide)
60 V
350mA (Tj)
4.5V, 10V
3Ohm @ 500mA, 10V
2V @ 500µA
-
±20V
60 pF @ 25 V
-
1W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3(StandardBody),TO-226_straightlead
MOSFET P-CH 60V 250MA TO92-3
Microchip Technology
1,180
In Stock
1 : £0.77000
Bag
-
Bag
Active
P-Channel
MOSFET (Metal Oxide)
60 V
250mA (Tj)
5V, 10V
8Ohm @ 500mA, 10V
3.5V @ 1mA
-
±20V
60 pF @ 25 V
-
1W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3(StandardBody),TO-226_straightlead
MOSFET N-CH 60V 500MA TO92-3
Microchip Technology
1,099
In Stock
1 : £0.77000
Bag
-
Bag
Active
N-Channel
MOSFET (Metal Oxide)
60 V
500mA (Tj)
3V, 10V
1.5Ohm @ 750mA, 10V
2V @ 1mA
-
±20V
150 pF @ 25 V
-
1W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
ZVN4306A
MOSFET P-CH 100V 140MA TO92-3
Diodes Incorporated
2,956
In Stock
32,000
Factory
1 : £0.78000
Bulk
-
Bulk
Active
P-Channel
MOSFET (Metal Oxide)
100 V
140mA (Ta)
10V
20Ohm @ 150mA, 10V
3.5V @ 1mA
-
±20V
50 pF @ 25 V
-
625mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-92
TO-226-3, TO-92-3 (TO-226AA)
ZVN4306A
MOSFET N-CH 100V 320MA TO92-3
Diodes Incorporated
2,582
In Stock
4,000
Factory
1 : £0.80000
Bulk
-
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
100 V
320mA (Ta)
10V
4Ohm @ 1A, 10V
2.4V @ 1mA
-
±20V
75 pF @ 25 V
-
700mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-92
TO-226-3, TO-92-3 (TO-226AA)
ZVN4306A
MOSFET N-CH 60V 450MA TO92-3
Diodes Incorporated
775
In Stock
28,000
Factory
1 : £0.80000
Bulk
-
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
60 V
450mA (Ta)
10V
2Ohm @ 1A, 10V
2.4V @ 1mA
-
±20V
75 pF @ 18 V
-
700mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-92
TO-226-3, TO-92-3 (TO-226AA)
Showing
of 138

Single FET, MOSFETs


Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

  • Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
  • Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

  1. High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
  2. Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
  3. High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.