SOT-227-4, miniBLOC Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
VS-FC420SA10 MOSFET N-CH 100V 435A SOT227 Vishay General Semiconductor - Diodes Division	8,476 In Stock	1 : £18.49000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	435A (Tc)	10V	2.15mOhm @ 200A, 10V	3.8V @ 750µA	375 nC @ 10 V	±20V	17300 pF @ 25 V	-	652W (Tc)	-55°C ~ 175°C (TJ)	-	-	Chassis Mount	SOT-227	SOT-227-4, miniBLOC
VS-FC420SA15 MOSFET N-CH 150V 400A SOT227 Vishay General Semiconductor - Diodes Division	1,151 In Stock	1 : £19.65000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	150 V	400A (Tc)	10V	2.75mOhm @ 200A, 10V	5.4V @ 1mA	250 nC @ 10 V	±20V	13700 pF @ 25 V	-	909W (Tc)	-55°C ~ 175°C (TJ)	-	-	Chassis Mount	SOT-227	SOT-227-4, miniBLOC
VS-FC270SA20 MOSFET N-CH 200V 287A SOT227 Vishay General Semiconductor - Diodes Division	911 In Stock	1 : £20.18000 Bulk	-	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	200 V	287A (Tc)	10V	4.7mOhm @ 200A, 10V	4.3V @ 1mA	250 nC @ 10 V	±20V	16500 pF @ 100 V	-	937W (Tc)	-55°C ~ 175°C (TJ)	-	-	Chassis Mount	SOT-227	SOT-227-4, miniBLOC
IXFN140N20P MOSFET N-CH 200V 115A SOT227B IXYS	1,200 In Stock	1 : £21.45000 Tube	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	115A (Tc)	10V, 15V	18mOhm @ 70A, 10V	5V @ 4mA	240 nC @ 10 V	±20V	7500 pF @ 25 V	-	680W (Tc)	-55°C ~ 175°C (TJ)	-	-	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFN64N50P MOSFET N-CH 500V 61A SOT227B IXYS	440 In Stock	1 : £22.21000 Tube	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	61A (Tc)	10V	85mOhm @ 32A, 10V	5.5V @ 8mA	150 nC @ 10 V	±30V	8700 pF @ 25 V	-	700W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFN180N25T MOSFET N-CH 250V 168A SOT227B IXYS	272 In Stock	1 : £22.35000 Tube	HiPerFET™, Trench	Tube	Active	N-Channel	MOSFET (Metal Oxide)	250 V	168A (Tc)	10V	12.9mOhm @ 60A, 10V	5V @ 8mA	345 nC @ 10 V	±20V	28000 pF @ 25 V	-	900W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFN520N075T2 MOSFET N-CH 75V 480A SOT227B IXYS	764 In Stock	1 : £25.62000 Tube	HiPerFET™, TrenchT2™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	75 V	480A (Tc)	10V	1.9mOhm @ 100A, 10V	5V @ 8mA	545 nC @ 10 V	±20V	41000 pF @ 25 V	-	940W (Tc)	-55°C ~ 175°C (TJ)	-	-	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFN170N25X3 MOSFET N-CH 250V 170A SOT227B IXYS	337 In Stock	1 : £25.95000 Tube	HiPerFET™, Ultra X3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	250 V	170A (Tc)	10V	7.4mOhm @ 85A, 10V	4.5V @ 4mA	190 nC @ 10 V	±20V	13500 pF @ 25 V	-	390W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXTN170P10P MOSFET P-CH 100V 170A SOT227B IXYS	226 In Stock	1 : £27.13000 Tube	Polar	Tube	Active	P-Channel	MOSFET (Metal Oxide)	100 V	170A (Tc)	10V	12mOhm @ 500mA, 10V	4V @ 1mA	240 nC @ 10 V	±20V	12600 pF @ 25 V	-	890W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFN82N60P MOSFET N-CH 600V 72A SOT-227B IXYS	1,038 In Stock	1 : £29.65000 Tube	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	72A (Tc)	10V	75mOhm @ 41A, 10V	5V @ 8mA	240 nC @ 10 V	±30V	23000 pF @ 25 V	-	1040W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFN132N50P3 MOSFET N-CH 500V 112A SOT227B IXYS	1,450 In Stock	1 : £31.34000 Tube	HiPerFET™, Polar3™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	112A (Tc)	10V	39mOhm @ 66A, 10V	5V @ 8mA	250 nC @ 10 V	±30V	18600 pF @ 25 V	-	1500W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
APT50M65JFLL MOSFET N-CH 500V 58A ISOTOP Microchip Technology	475 In Stock	1 : £33.42000 Tube	POWER MOS 7®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	58A (Tc)	10V	65mOhm @ 29A, 10V	5V @ 2.5mA	141 nC @ 10 V	±30V	7010 pF @ 25 V	-	520W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	ISOTOP®	SOT-227-4, miniBLOC
IXFN240N25X3 MOSFET N-CH 250V 240A SOT227B IXYS	999 In Stock	1 : £34.04000 Tube	HiPerFET™, Ultra X3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	250 V	240A (Tc)	10V	4.5mOhm @ 120A, 10V	4.5V @ 8mA	345 nC @ 10 V	±20V	23800 pF @ 25 V	-	695W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFN300N20X3 MOSFET N-CH 200V 300A SOT227B IXYS	159 In Stock	1 : £34.04000 Tube	HiPerFET™, Ultra X3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	300A (Tc)	10V	3.5mOhm @ 150A, 10V	4.5V @ 8mA	375 nC @ 10 V	±20V	23800 pF @ 25 V	-	695W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFN300N10P MOSFET N-CH 100V 295A SOT227B IXYS	341 In Stock	1 : £34.31000 Tube	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	295A (Tc)	10V	5.5mOhm @ 50A, 10V	5V @ 8mA	279 nC @ 10 V	±20V	23000 pF @ 25 V	-	1070W (Tc)	-55°C ~ 175°C (TJ)	-	-	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFN100N50P MOSFET N-CH 500V 90A SOT-227B IXYS	191 In Stock	1 : £34.35000 Tube	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	90A (Tc)	10V	49mOhm @ 50A, 10V	5V @ 8mA	240 nC @ 10 V	±30V	20000 pF @ 25 V	-	1040W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXTN60N50L2 MOSFET N-CH 500V 53A SOT227B IXYS	1,709 In Stock 610 Factory	1 : £36.38000 Tube	Linear L2™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	53A (Tc)	10V	100mOhm @ 30A, 10V	4.5V @ 250µA	610 nC @ 10 V	±30V	24000 pF @ 25 V	-	735W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXTN200N10L2 MOSFET N-CH 100V 178A SOT227B IXYS	1,044 In Stock	1 : £36.38000 Tube	Linear L2™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	178A (Tc)	10V	11mOhm @ 100A, 10V	4.5V @ 3mA	540 nC @ 10 V	±20V	23000 pF @ 25 V	-	830W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXTN90N25L2 MOSFET N-CH 250V 90A SOT227B IXYS	379 In Stock	1 : £36.38000 Tube	Linear L2™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	250 V	90A (Tc)	10V	33mOhm @ 500mA, 10V	4.5V @ 3mA	640 nC @ 10 V	±20V	23000 pF @ 25 V	-	735W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXTN240N075L2 MOSFET N-CH 75V 225A SOT227B IXYS	523 In Stock	1 : £38.58000 Tube	Linear L2™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	75 V	225A (Tc)	10V	7mOhm @ 120A, 10V	4.5V @ 3mA	546 nC @ 10 V	±20V	19000 pF @ 25 V	-	735W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
MSC025SMA120J SICFET N-CH 1.2KV 77A SOT227 Microchip Technology	1,850 In Stock	1 : £42.43000 Tube	MSiC™ MA	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	77A (Tc)	20V	31mOhm @ 40A, 20V	2.8V @ 1mA	232 nC @ 20 V	+25V, -10V	3020 pF @ 1000 V	-	278W (Tc)	-55°C ~ 175°C (TJ)	-	-	Chassis Mount	SOT-227 (ISOTOP®)	SOT-227-4, miniBLOC
IXFN56N90P MOSFET N-CH 900V 56A SOT-227B IXYS	247 In Stock	1 : £44.21000 Tube	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	900 V	56A (Tc)	10V	135mOhm @ 28A, 10V	6.5V @ 3mA	375 nC @ 10 V	±30V	23000 pF @ 25 V	-	1000W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
APT41F100J MOSFET N-CH 1000V 42A ISOTOP Microchip Technology	108 In Stock	1 : £45.59000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	42A (Tc)	10V	210mOhm @ 33A, 10V	5V @ 5mA	570 nC @ 10 V	±30V	18500 pF @ 25 V	-	960W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	ISOTOP®	SOT-227-4, miniBLOC
G3R20MT12N SIC MOSFET N-CH 105A SOT227 Navitas Semiconductor, Inc.	213 In Stock	1 : £45.60000 Tube	G3R™	Tube	Last Time Buy	N-Channel	SiCFET (Silicon Carbide)	1200 V	105A (Tc)	15V	24mOhm @ 60A, 15V	2.69V @ 15mA	219 nC @ 15 V	+20V, -10V	5873 pF @ 800 V	-	365W (Tc)	-55°C ~ 175°C (TJ)	-	-	Chassis Mount	SOT-227	SOT-227-4, miniBLOC
IXFN70N100X MOSFET N-CH 1000V 56A SOT227B IXYS	180 In Stock 350 Factory	1 : £47.87000 Tube	HiPerFET™, Ultra X	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	56A (Tc)	10V	89mOhm @ 35A, 10V	6V @ 8mA	350 nC @ 10 V	±30V	9150 pF @ 25 V	-	1200W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.

Single FET, MOSFETs

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