9.7A (Ta) Single FETs, MOSFETs

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of 23

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
AO4419 MOSFET P-CH 30V 9.7A 8SOIC Alpha & Omega Semiconductor Inc.	14,845 In Stock	1 : £0.80000 Cut Tape (CT) 3,000 : £0.19963 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	9.7A (Ta)	4.5V, 10V	20mOhm @ 9.7A, 10V	2.7V @ 250µA	32 nC @ 10 V	±20V	1900 pF @ 15 V	-	3.1W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
TK10A60W,S4VX MOSFET N-CH 600V 9.7A TO220SIS Toshiba Semiconductor and Storage	114 In Stock	1 : £2.72000 Tube	DTMOSIV	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	9.7A (Ta)	10V	380mOhm @ 4.9A, 10V	3.7V @ 500µA	20 nC @ 10 V	±30V	700 pF @ 300 V	-	30W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS	TO-220-3 Full Pack
TK10P60W,RVQ MOSFET N CH 600V 9.7A DPAK Toshiba Semiconductor and Storage	2,264 In Stock	1 : £3.24000 Cut Tape (CT) 2,000 : £1.13078 Tape & Reel (TR)	DTMOSIV	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	9.7A (Ta)	10V	430mOhm @ 4.9A, 10V	3.7V @ 500µA	20 nC @ 10 V	±30V	700 pF @ 300 V	-	80W (Tc)	150°C (TJ)	-	-	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
DMG4468LK3-13 MOSFET N-CH 30V 9.7A TO252-3 Diodes Incorporated	1,178 In Stock 12,500 Factory	1 : £0.65000 Cut Tape (CT) 2,500 : £0.15314 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	9.7A (Ta)	4.5V, 10V	16mOhm @ 11.6A, 10V	1.95V @ 250µA	18.85 nC @ 10 V	±20V	867 pF @ 15 V	-	1.68W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63
DMT8012LSS-13 MOSFET N-CH 80V 9.7A 8SO Diodes Incorporated	747 In Stock 2,500 Factory	1 : £1.05000 Cut Tape (CT) 2,500 : £0.27300 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	80 V	9.7A (Ta)	4.5V, 10V	16.5mOhm @ 12A, 10V	3V @ 250µA	34 nC @ 10 V	±20V	1949 pF @ 40 V	-	1.5W (Ta)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
TK10A50W,S5X X35 PB-F POWER MOSFET TRANSISTOR Toshiba Semiconductor and Storage	101 In Stock	1 : £1.91000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	9.7A (Ta)	10V	380mOhm @ 4.9A, 10V	3.7V @ 500µA	20 nC @ 10 V	±30V	700 pF @ 300 V	-	30W (Tc)	150°C	-	-	Through Hole	TO-220SIS	TO-220-3 Full Pack
NTP75N03RG MOSFET N-CH 25V 9.7A TO220AB onsemi	0 In Stock 4,012 Marketplace	50 : £0.71460 Tube 673 : £0.33394 Tube	-	Tube Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	25 V	9.7A (Ta)	4.5V, 10V	8mOhm @ 20A, 10V	2V @ 250µA	13.2 nC @ 5 V	±20V	1333 pF @ 20 V	-	1.25W (Ta), 74.4W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220	TO-220-3
NTP75N03R MOSFET N-CH 25V 9.7A TO220AB onsemi	0 In Stock 2,917 Marketplace	50 : £0.71460 Tube 343 : £0.65306 Tube	-	Tube Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	25 V	9.7A (Ta)	4.5V, 10V	8mOhm @ 20A, 10V	2V @ 250µA	13.2 nC @ 5 V	±20V	1333 pF @ 20 V	-	1.25W (Ta), 74.4W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220	TO-220-3
FDW264P MOSFET P-CH 20V 9.7A 8TSSOP Fairchild Semiconductor	1,494 Marketplace	173 : £1.29127 Bulk	-	Bulk	Obsolete	P-Channel	MOSFET (Metal Oxide)	20 V	9.7A (Ta)	2.5V, 4.5V	10mOhm @ 9.7A, 4.5V	1.5V @ 250µA	135 nC @ 5 V	±12V	7225 pF @ 10 V	-	1.3W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-TSSOP	8-TSSOP (0.173", 4.40mm Width)
AM6612N MOSFET N-CH 30V 9.7A SOIC-8 Analog Power Inc.	4,000 Marketplace	1 : £0.24000 Bulk	-	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	30 V	9.7A (Ta)	4.5V, 10V	22mOhm @ 7.5A, 10V	1V @ 250µA	4 nC @ 4.5 V	±20V	360 pF @ 15 V	-	3.1W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
AM4840N MOSFET N-CH 40V 9.7A SOIC-8 Analog Power Inc.	20,000 Marketplace	1 : £0.42000 Bulk	-	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	40 V	9.7A (Ta)	4.5V, 10V	22mOhm @ 7.8A, 10V	1V @ 250µA	10 nC @ 4.5 V	±20V	1306 pF @ 15 V	-	3.1W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
AM4462N MOSFET N-CH 60V 9.7A SO-8 Analog Power Inc.	4,200 Marketplace	1 : £0.58000 Bulk	-	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	60 V	9.7A (Ta)	4.5V, 10V	22mOhm @ 7.8A, 10V	1V @ 250µA	14 nC @ 4.5 V	±20V	1443 pF @ 15 V	-	3.1W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
TK10A60W5,S5VX MOSFET N-CH 600V 9.7A TO220SIS Toshiba Semiconductor and Storage	37 In Stock	1 : £2.00000 Tube	DTMOSIV	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	9.7A (Ta)	10V	450mOhm @ 4.9A, 10V	4.5V @ 500µA	25 nC @ 10 V	±30V	720 pF @ 300 V	-	30W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS	TO-220-3 Full Pack
TK10E60W,S1VX MOSFET N-CH 600V 9.7A TO220 Toshiba Semiconductor and Storage	70 In Stock	1 : £3.42000 Tube	DTMOSIV	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	9.7A (Ta)	10V	380mOhm @ 4.9A, 10V	3.7V @ 500µA	20 nC @ 10 V	±30V	700 pF @ 300 V	-	100W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220	TO-220-3
TK10P50W,RQ PB-F POWER MOSFET TRANSISTOR DPA Toshiba Semiconductor and Storage	0 In Stock Check Lead Time	1 : £2.17000 Cut Tape (CT) 2,000 : £0.65676 Tape & Reel (TR)	DTMOSIV	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	500 V	9.7A (Ta)	10V	430mOhm @ 4.9A, 10V	3.7V @ 500µA	20 nC @ 10 V	±30V	700 pF @ 300 V	-	80W (Tc)	150°C	-	-	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
TK10Q60W,S1VQ MOSFET N-CH 600V 9.7A IPAK Toshiba Semiconductor and Storage	0 In Stock Check Lead Time	1 : £3.14000 Tube	DTMOSIV	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	9.7A (Ta)	10V	430mOhm @ 4.9A, 10V	3.7V @ 500µA	20 nC @ 10 V	±30V	700 pF @ 300 V	-	80W (Tc)	150°C (TJ)	-	-	Through Hole	IPAK	TO-251-3 Stub Leads, IPAK
SI4427BDY-T1-GE3 MOSFET P-CH 30V 9.7A 8SO Vishay Siliconix	0 In Stock	2,500 : £0.56274 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	30 V	9.7A (Ta)	10V	10.5mOhm @ 12.6A, 10V	1.4V @ 250µA	70 nC @ 4.5 V	±12V	-	-	1.5W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
TK10A60W,S4X MOSFET N-CH 600V 9.7A TO220 Toshiba Semiconductor and Storage	0 In Stock Check Lead Time	2,500 : £1.08532 Tube	DTMOSIV	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	9.7A (Ta)	10V	380mOhm @ 4.9A, 10V	3.7V @ 500µA	20 nC @ 10 V	±30V	720 pF @ 300 V	-	30W (Tc)	-	-	-	Through Hole	TO-220SIS	TO-220-3 Full Pack
TK10V60W,LVQ MOSFET N-CH 600V 9.7A 4DFN Toshiba Semiconductor and Storage	0 In Stock Check Lead Time	2,500 : £1.39700 Tape & Reel (TR)	DTMOSIV	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	600 V	9.7A (Ta)	10V	380mOhm @ 4.9A, 10V	3.7V @ 500µA	20 nC @ 10 V	±30V	700 pF @ 300 V	-	88.3W (Tc)	150°C (TJ)	-	-	Surface Mount	4-DFN-EP (8x8)	4-VSFN Exposed Pad
SI4427BDY-T1-E3 MOSFET P-CH 30V 9.7A 8SO Vishay Siliconix	0 In Stock	2,500 : £0.46714 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Obsolete	P-Channel	MOSFET (Metal Oxide)	30 V	9.7A (Ta)	2.5V, 10V	10.5mOhm @ 12.6A, 10V	1.4V @ 250µA	70 nC @ 4.5 V	±12V	-	-	1.5W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
AO4419L MOSFET P-CH 30V 9.7A 8SO Alpha & Omega Semiconductor Inc.	0 In Stock	Obsolete	-	Bulk	Obsolete	P-Channel	MOSFET (Metal Oxide)	30 V	9.7A (Ta)	4.5V, 10V	20mOhm @ 9.7A, 10V	2.7V @ 250µA	32 nC @ 10 V	±20V	1900 pF @ 15 V	-	3.1W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
PMPB11R2VPX MOSFET P-CH 12V 9.7A DFN2020M-6 Nexperia USA Inc.	0 In Stock	Obsolete	TrenchMOS™	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	12 V	9.7A (Ta)	-	14mOhm @ 9.7A, 4.5V	900mV @ 250µA	39 nC @ 4.5 V	±8V	2230 pF @ 6 V	-	1.9W (Ta), 12.5W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DFN2020MD-6	6-UDFN Exposed Pad
AM4424N MOSFET N-CH 20V 9.7A SO-8 Analog Power Inc.	1 Marketplace	1 : £0.53000 Bulk	-	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	30 V	9.7A (Ta)	2.5V, 4.5V	22mOhm @ 9.7A, 4.5V	1V @ 250µA	5.5 nC @ 4.5 V	±8V	-	-	3.1W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.

Single FET, MOSFETs

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