8-PowerSFN Single FETs, MOSFETs

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
FDBL9401-F085T6AW
MOSFET N-CH 100V 185A 8HPSOF
onsemi
6,654
In Stock
1 : £3.66000
Cut Tape (CT)
2,000 : £1.21957
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Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
185A (Tc)
10V
4.1mOhm @ 80A, 10V
4V @ 250µA
69 nC @ 10 V
±20V
3240 pF @ 50 V
-
300W (Ta)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
8-HPSOF
8-PowerSFN
4,228
In Stock
1 : £4.83000
Cut Tape (CT)
2,000 : £1.67215
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
260A (Tc)
6V, 10V
1.9mOhm @ 100A, 10V
3.8V @ 210µA
166 nC @ 10 V
±20V
11830 pF @ 50 V
-
300W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PG-HSOF-8-1
8-PowerSFN
2,000
In Stock
1 : £4.99000
Cut Tape (CT)
2,000 : £1.74010
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
300A (DC)
6V, 10V
1.4mOhm @ 100A, 10V
3.8V @ 230µA
187 nC @ 10 V
±20V
13178 pF @ 40 V
-
300W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PG-HSOF-8-1
8-PowerSFN
6,753
In Stock
1 : £5.11000
Cut Tape (CT)
1,800 : £1.80108
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Tape & Reel (TR)
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Active
N-Channel
MOSFET (Metal Oxide)
100 V
35A (Ta), 315A (Tc)
6V, 10V
1.5mOhm @ 150A, 10V
3.8V @ 267µA
242 nC @ 10 V
±20V
11000 pF @ 50 V
-
3.8W (Ta), 300W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-HSOF-8-10
8-PowerSFN
8-PowerDFN
MOSFET N-CH 80V 300A 8HPSOF
onsemi
20
In Stock
46,780
Marketplace
1 : £5.33000
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2,000 : £2.01481
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Tape & Reel (TR)
Tape & Reel (TR)
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Active
N-Channel
MOSFET (Metal Oxide)
80 V
300A (Tc)
10V
1.4mOhm @ 80A, 10V
4V @ 250µA
188 nC @ 10 V
±20V
12800 pF @ 25 V
-
429W (Tj)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
8-HPSOF
8-PowerSFN
8-PowerDFN
MOSFET N-CH 150V 169A 8HPSOF
onsemi
3,037
In Stock
1 : £5.33000
Cut Tape (CT)
2,000 : £2.01202
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Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
169A (Tc)
10V
6.3mOhm @ 80A, 10V
4V @ 250µA
90 nC @ 10 V
±20V
5805 pF @ 75 V
-
500W (Tj)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
8-HPSOF
8-PowerSFN
2,220
In Stock
1 : £5.41000
Cut Tape (CT)
2,000 : £1.91461
Tape & Reel (TR)
Tape & Reel (TR)
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Active
N-Channel
MOSFET (Metal Oxide)
80 V
300A (Tc)
6V, 10V
1.2mOhm @ 100A, 10V
3.8V @ 275µA
231 nC @ 10 V
±20V
16250 pF @ 40 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
Automotive
-
Surface Mount
PG-HSOF-8-1
8-PowerSFN
18,477
In Stock
1 : £5.43000
Cut Tape (CT)
2,000 : £1.92286
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Tape & Reel (TR)
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Active
N-Channel
MOSFET (Metal Oxide)
100 V
300A (Tc)
6V, 10V
1.5mOhm @ 100A, 10V
3.8V @ 275µA
216 nC @ 10 V
±20V
16011 pF @ 50 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PG-HSOF-8-1
8-PowerSFN
8-PowerDFN
MOSFET N-CH 150V 169A 8HPSOF
onsemi
769
In Stock
1 : £5.57000
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2,000 : £2.13244
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Active
N-Channel
MOSFET (Metal Oxide)
150 V
169A (Tc)
10V
6.3mOhm @ 80A, 10V
4V @ 250µA
90 nC @ 10 V
±20V
5805 pF @ 75 V
-
500W (Tj)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
8-HPSOF
8-PowerSFN
23,134
In Stock
1 : £5.67000
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2,000 : £2.02363
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Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
410A (Tj)
6V, 10V
1.1mOhm @ 100A, 10V
3.8V @ 275µA
231 nC @ 10 V
±20V
16250 pF @ 40 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PG-HSOF-8-1
8-PowerSFN
12,664
In Stock
1 : £5.67000
Cut Tape (CT)
2,000 : £2.02306
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Tape & Reel (TR)
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Active
N-Channel
MOSFET (Metal Oxide)
100 V
360A (Tj)
6V, 10V
1.4mOhm @ 100A, 10V
3.8V @ 275µA
216 nC @ 10 V
±20V
16011 pF @ 50 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PG-HSOF-8-1
8-PowerSFN
PG-HSOF-8-1
MOSFET N-CH 30V 300A 8HSOF
Infineon Technologies
2,507
In Stock
1 : £5.75000
Cut Tape (CT)
2,000 : £2.05987
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Tape & Reel (TR)
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Active
N-Channel
MOSFET (Metal Oxide)
30 V
300A (Tc)
4.5V, 10V
0.4mOhm @ 150A, 10V
2.2V @ 250µA
163 nC @ 4.5 V
±20V
24000 pF @ 15 V
-
3.8W (Ta), 300W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-HSOF-8-1
8-PowerSFN
PG-HSOF-8-1
MOSFET N-CH 100V 300A 8HSOF
Infineon Technologies
18,282
In Stock
1 : £5.79000
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2,000 : £2.07648
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Active
N-Channel
MOSFET (Metal Oxide)
100 V
300A (Tc)
6V, 10V
1.5mOhm @ 150A, 10V
3.8V @ 250µA
211 nC @ 10 V
±20V
16000 pF @ 50 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-HSOF-8-1
8-PowerSFN
AOTL66518
DESC: MOSFET N-CH 80V 65A TOLLA
Alpha & Omega Semiconductor Inc.
3,740
In Stock
1 : £5.95000
Cut Tape (CT)
2,000 : £2.32932
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Active
N-Channel
MOSFET (Metal Oxide)
80 V
65A (Ta), 420A (Tc)
8V, 10V
1.25mOhm @ 20A, 10V
3.6V @ 250µA
245 nC @ 10 V
±20V
13000 pF @ 40 V
-
10W (Ta), 425W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TOLLA
8-PowerSFN
PG-HSOF-8-1
MOSFET N-CH 100V 300A 8HSOF
Infineon Technologies
8,287
In Stock
1 : £5.96000
Cut Tape (CT)
2,000 : £2.14905
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Tape & Reel (TR)
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Digi-Reel®
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
100 V
300A (Tc)
6V, 10V
2mOhm @ 150A, 10V
3.5V @ 272µA
156 nC @ 10 V
±20V
11200 pF @ 50 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-HSOF-8-1
8-PowerSFN
3,898
In Stock
1 : £5.98000
Cut Tape (CT)
2,000 : £2.15562
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Tape & Reel (TR)
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Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
21A (Ta), 190A (Tc)
8V, 10V
3.9mOhm @ 50A, 10V
4.6V @ 257µA
98 nC @ 10 V
±20V
7700 pF @ 75 V
-
3.8W (Ta), 319W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-HSOF-8
8-PowerSFN
PG-HSOF-8-1
MOSFET N-CH 150V 155A 8HSOF
Infineon Technologies
3,002
In Stock
1 : £6.02000
Cut Tape (CT)
2,000 : £2.17329
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Tape & Reel (TR)
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Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
155A (Tc)
8V, 10V
5.9mOhm @ 150A, 10V
4V @ 270µA
92 nC @ 10 V
±20V
7200 pF @ 75 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-HSOF-8-1
8-PowerSFN
FDBL9401-F085T6AW
PTNG 100V STD TOLL
onsemi
983
In Stock
1 : £6.10000
Cut Tape (CT)
2,000 : £2.41006
Tape & Reel (TR)
-
Tape & Reel (TR)
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Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
35.5A (Ta), 300A (Tc)
10V
1.5mOhm @ 80A, 10V
4V @ 799µA
131 nC @ 10 V
±20V
10100 pF @ 50 V
-
4.5W (Ta), 331W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
8-HPSOF
8-PowerSFN
IGT65R140D2ATMA1
GANFET N-CH 650V 31A 8PSFN
Infineon Technologies
1,978
In Stock
1 : £6.21000
Cut Tape (CT)
2,000 : £2.25775
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Active
N-Channel
GaNFET (Gallium Nitride)
650 V
31A (Tc)
-
66mOhm @ 7.9A
1.6V @ 2.6mA
4.7 nC @ 3 V
-10V
340 pF @ 400 V
-
106W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-HSOF-8-3
8-PowerSFN
PG-HSOF-8-1
MOSFET N-CH 80V 300A 8HSOF
Infineon Technologies
18,472
In Stock
1 : £6.26000
Cut Tape (CT)
2,000 : £2.27748
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Active
N-Channel
MOSFET (Metal Oxide)
80 V
300A (Tc)
6V, 10V
1.2mOhm @ 150A, 10V
3.8V @ 280µA
223 nC @ 10 V
±20V
17000 pF @ 40 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-HSOF-8-1
8-PowerSFN
AOTL66518
MOSFET N-CH 60V 73.5A/400A TOLLA
Alpha & Omega Semiconductor Inc.
7,328
In Stock
1 : £6.31000
Cut Tape (CT)
2,000 : £2.51979
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Active
N-Channel
MOSFET (Metal Oxide)
60 V
73.5A (Ta), 400A (Tc)
6V, 10V
0.85mOhm @ 20A, 10V
3.3V @ 250µA
300 nC @ 10 V
±20V
14200 pF @ 30 V
-
8.3W (Ta), 500W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TOLLA
8-PowerSFN
2,771
In Stock
1 : £6.54000
Cut Tape (CT)
2,000 : £2.39888
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Active
N-Channel
MOSFET (Metal Oxide)
135 V
29A (Ta), 297A (Tc)
8V, 15V
1.95mOhm @ 142A, 15V
3.5V @ 275µA
207 nC @ 10 V
±20V
14000 pF @ 68 V
-
3.8W (Ta), 395W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-HSOF-8-1
8-PowerSFN
PG-HSOF-8-1
MOSFET N-CH 60V 300A 8HSOF
Infineon Technologies
76,477
In Stock
1 : £6.56000
Cut Tape (CT)
2,000 : £2.40586
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Active
N-Channel
MOSFET (Metal Oxide)
60 V
300A (Tc)
6V, 10V
0.75mOhm @ 150A, 10V
3.3V @ 280µA
287 nC @ 10 V
±20V
16000 pF @ 30 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-HSOF-8-1
8-PowerSFN
IPT010N08NM5ATMA1
OPTIMOS 6 POWER-TRANSISTOR,120V
Infineon Technologies
3,822
In Stock
1 : £6.65000
Cut Tape (CT)
2,000 : £2.44493
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Active
N-Channel
MOSFET (Metal Oxide)
120 V
29A (Ta), 331A (Tc)
8V, 10V
1.7mOhm @ 150A, 10V
3.6V @ 275µA
141 nC @ 10 V
±20V
11000 pF @ 60 V
-
3W (Ta), 395W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-HSOF-8
8-PowerSFN
2,101
In Stock
1 : £6.82000
Cut Tape (CT)
2,000 : £2.79574
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Active
N-Channel
MOSFET (Metal Oxide)
150 V
214A (Tc)
10V
4.3mOhm @ 20A, 10V
3.7V @ 250µA
115 nC @ 10 V
±20V
6460 pF @ 75 V
-
500W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TOLLA
8-PowerSFN
Showing
of 395

Single FET, MOSFETs


Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

  • Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
  • Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

  1. High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
  2. Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
  3. High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.