8.7A (Ta) Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
DMP3036SFG-7 MOSFET P-CH 30V 8.7A PWRDI3333-8 Diodes Incorporated	4,072 In Stock 232,000 Factory	1 : £0.74000 Cut Tape (CT) 2,000 : £0.18479 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	8.7A (Ta)	5V, 10V	20mOhm @ 8A, 10V	2.5V @ 250µA	16.5 nC @ 10 V	±25V	1931 pF @ 15 V	-	950mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	POWERDI3333-8	8-PowerVDFN
DMP3036SFG-13 MOSFET P-CH 30V 8.7A PWRDI3333-8 Diodes Incorporated	2,874 In Stock 9,000 Factory	1 : £0.74000 Cut Tape (CT) 3,000 : £0.17553 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	8.7A (Ta)	5V, 10V	20mOhm @ 8A, 10V	2.5V @ 250µA	16.5 nC @ 10 V	±25V	1931 pF @ 15 V	-	950mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	POWERDI3333-8	8-PowerVDFN
SI4401BDY MOSFET P-CH 40V 8.7A 8SOIC UMW	2,068 In Stock	1 : £0.68000 Cut Tape (CT) 3,000 : £0.16407 Tape & Reel (TR)	*	Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	40 V	8.7A (Ta)	4.5V, 10V	14mOhm @ 10.5A, 10V	3V @ 250µA	-	±20V	-	-	1.5W (Ta)	-55°C ~ 155°C (TJ)	-	-	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
PMCM6501UNEZ MOSFET N-CH 20V 8.7A 6WLCSP Nexperia USA Inc.	3,005 In Stock	1 : £0.72000 Cut Tape (CT)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Obsolete	N-Channel	MOSFET (Metal Oxide)	20 V	8.7A (Ta)	1.5V, 4.5V	21mOhm @ 3A, 4.5V	900mV @ 250µA	6.2 nC @ 4.5 V	±8V	1050 pF @ 10 V	-	400mW	150°C (TJ)	-	-	Surface Mount	6-WLCSP (1.48x0.98)	6-XFBGA, WLCSP
PMPB12R7EPX PMPB12R7EP - 30 V, P-CHANNEL TRE Nexperia USA Inc.	0 In Stock	1 : £0.52000 Cut Tape (CT) 3,000 : £0.12243 Tape & Reel (TR)	TrenchMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	8.7A (Ta)	4.5V, 10V	15.5mOhm @ 8.7A, 10V	2.5V @ 250µA	49 nC @ 10 V	±20V	1638 pF @ 15 V	-	1.9W (Ta), 12.5W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DFN2020M-6	6-UDFN Exposed Pad
SI4401BDY-T1-GE3 MOSFET P-CH 40V 8.7A 8SO Vishay Siliconix	4 In Stock	1 : £2.01000 Cut Tape (CT) 2,500 : £0.60091 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Obsolete	P-Channel	MOSFET (Metal Oxide)	40 V	8.7A (Ta)	4.5V, 10V	14mOhm @ 10.5A, 10V	3V @ 250µA	55 nC @ 5 V	±20V	-	-	1.5W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
IRF7401PBF MOSFET N-CH 20V 8.7A 8SO Infineon Technologies	0 In Stock	Discontinued at DigiKey	HEXFET®	Tube	Discontinued at DigiKey	N-Channel	MOSFET (Metal Oxide)	20 V	8.7A (Ta)	2.7V, 4.5V	22mOhm @ 4.1A, 4.5V	700mV @ 250µA (Min)	48 nC @ 4.5 V	±12V	1600 pF @ 15 V	-	2.5W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF7401TRPBF MOSFET N-CH 20V 8.7A 8SO Infineon Technologies	0 In Stock	Obsolete	HEXFET®	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	20 V	8.7A (Ta)	2.7V, 4.5V	22mOhm @ 4.1A, 4.5V	700mV @ 250µA (Min)	48 nC @ 4.5 V	±12V	1600 pF @ 15 V	-	2.5W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI4401BDY-T1-E3 MOSFET P-CH 40V 8.7A 8SO Vishay Siliconix	0 In Stock	Obsolete	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Obsolete	P-Channel	MOSFET (Metal Oxide)	40 V	8.7A (Ta)	4.5V, 10V	14mOhm @ 10.5A, 10V	3V @ 250µA	55 nC @ 5 V	±20V	-	-	1.5W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
SI4401DY-T1-E3 MOSFET P-CH 40V 8.7A 8SO Vishay Siliconix	0 In Stock	Obsolete	TrenchFET®	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	40 V	8.7A (Ta)	4.5V, 10V	15.5mOhm @ 10.5A, 10V	1V @ 250µA (Min)	50 nC @ 5 V	±20V	-	-	1.5W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
SI4401DY-T1-GE3 MOSFET P-CH 40V 8.7A 8SO Vishay Siliconix	0 In Stock	Obsolete	TrenchFET®	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	40 V	8.7A (Ta)	4.5V, 10V	15.5mOhm @ 10.5A, 10V	1V @ 250µA (Min)	50 nC @ 5 V	±20V	-	-	1.5W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
BFL4007 MOSFET N-CH 600V 8.7A TO220FI onsemi	0 In Stock	Obsolete	-	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	600 V	8.7A (Ta)	10V	680mOhm @ 7A, 10V	5V @ 1mA	46 nC @ 10 V	±30V	1200 pF @ 30 V	-	2W (Ta), 40W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220FI(LS)	TO-220-3 Full Pack

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.

Single FET, MOSFETs

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