72A (Tc) Single FETs, MOSFETs

Results: 67
Stocking Options
Environmental Options
Media
Exclude
67Results
Applied FiltersRemove All

Showing
of 67
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
MOSFET N-CH 200V 72A D2PAK
Infineon Technologies
3,629
In Stock
1 : £3.01000
Cut Tape (CT)
800 : £1.07211
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
200 V
72A (Tc)
10V
22mOhm @ 44A, 10V
5V @ 250µA
150 nC @ 10 V
±20V
5380 pF @ 50 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263AB
MOSFET N-CH 300V 72A TO263AA
IXYS
145
In Stock
1 : £9.57000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
300 V
72A (Tc)
10V
19mOhm @ 36A, 10V
4.5V @ 1.5mA
82 nC @ 10 V
±20V
5400 pF @ 25 V
-
390W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263AA (IXFA)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-220-3
MOSFET N-CH 300V 72A TO220AB
IXYS
3,324
In Stock
1 : £9.43000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
300 V
72A (Tc)
10V
19mOhm @ 36A, 10V
4.5V @ 1.5mA
82 nC @ 10 V
±20V
5400 pF @ 25 V
-
390W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220-3
TO-220-3
IXFP30N25X3M
MOSFET N-CH 300V 72A TO220
IXYS
533
In Stock
900
Factory
1 : £9.51000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
300 V
72A (Tc)
10V
19mOhm @ 36A, 10V
4.5V @ 1.5mA
82 nC @ 10 V
±20V
5400 pF @ 25 V
-
36W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220 Isolated Tab
TO-220-3 Full Pack, Isolated Tab
D2PAK-7
SIC MOSFET 1200 V 22 MOHM M3S SE
onsemi
1,197
In Stock
1 : £15.29000
Cut Tape (CT)
800 : £7.98650
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
72A (Tc)
18V
30mOhm @ 40A, 18V
4.4V @ 20mA
142 nC @ 18 V
+22V, -10V
3175 pF @ 800 V
-
234W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
D2PAK-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
DI330N04D7
1200V/23MO,SICFET,G4,TO263-7
onsemi
613
In Stock
800
Factory
1 : £19.22000
Cut Tape (CT)
800 : £10.69541
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Cascode SiCJFET)
1200 V
72A (Tc)
12V
30mOhm @ 40A, 12V
6V @ 10mA
37.8 nC @ 15 V
±20V
1430 pF @ 800 V
-
385W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
D2PAK-7L
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
SOT-227B
MOSFET N-CH 600V 72A SOT-227B
IXYS
867
In Stock
1 : £34.80000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
72A (Tc)
10V
75mOhm @ 41A, 10V
5V @ 8mA
240 nC @ 10 V
±30V
23000 pF @ 25 V
-
1040W (Tc)
-55°C ~ 150°C (TJ)
-
-
Chassis Mount
SOT-227B
SOT-227-4, miniBLOC
PowerPAK_1212-8SLW_Top
AUTOMOTIVE N-CHANNEL 80 V (D-S)
Vishay Siliconix
2,982
In Stock
1 : £1.25000
Cut Tape (CT)
3,000 : £0.33279
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
72A (Tc)
10V
8.67mOhm @ 10A, 10V
3.5V @ 250µA
56 nC @ 10 V
±20V
3092 pF @ 25 V
-
119W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount, Wettable Flank
PowerPAK® 1212-8SLW
PowerPAK® 1212-8SLW
SQJA80EP-T1_GE3
MOSFET N-CH 80V 72A PPAK SO-8
Vishay Siliconix
3,140
In Stock
1 : £1.93000
Cut Tape (CT)
3,000 : £0.55723
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
72A (Tc)
10V
5.3mOhm @ 10A, 10V
3.3V @ 250µA
95 nC @ 10 V
±20V
5100 pF @ 25 V
-
68W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
146
In Stock
1 : £2.02000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
60 V
72A (Tc)
6V, 10V
4mOhm @ 72A, 10V
3.3V @ 50µA
50 nC @ 10 V
±20V
3500 pF @ 30 V
-
36W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO220 Full Pack
TO-220-3 Full Pack
TO-247-3
MOSFET N-CH 600V 72A TO247
STMicroelectronics
212
In Stock
1 : £8.28000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
72A (Tc)
-
-
-
-
±25V
-
-
-
-
-
-
Through Hole
TO-247 Long Leads
TO-247-3
TO-247-3
MOSFET N-CH 600V 72A TO247
STMicroelectronics
551
In Stock
1 : £8.35000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
72A (Tc)
10V
36mOhm @ 36A, 10V
4.75V @ 250µA
106 nC @ 10 V
±25V
4850 pF @ 100 V
-
446W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247 Long Leads
TO-247-3
TO-220-3
MOSFET N-CH 200V 72A TO220
IXYS
783
In Stock
1 : £8.43000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
200 V
72A (Tc)
10V
20mOhm @ 36A, 10V
4.5V @ 1.5mA
55 nC @ 10 V
±20V
3780 pF @ 25 V
-
320W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220-3
TO-220-3
TO-263AB
MOSFET N-CH 200V 72A TO263AA
IXYS
367
In Stock
1 : £8.57000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
200 V
72A (Tc)
10V
20mOhm @ 36A, 10V
4.5V @ 1.5mA
55 nC @ 10 V
±20V
3780 pF @ 25 V
-
320W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263AA (IXFA)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-247-4
MOSFET N-CH 600V 72A TO247-4
STMicroelectronics
442
In Stock
1 : £8.88000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
72A (Tc)
10V
36mOhm @ 36A, 10V
4.75V @ 250µA
106 nC @ 10 V
±25V
4850 pF @ 100 V
-
446W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
IXTQ34N65X2M
MOSFET N-CH 200V 72A TO3P
IXYS
286
In Stock
1 : £9.11000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
200 V
72A (Tc)
10V
20mOhm @ 36A, 10V
4.5V @ 1.5mA
55 nC @ 10 V
±20V
3780 pF @ 25 V
-
320W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-3P
TO-3P-3, SC-65-3
TO-247-3
MOSFET N-CH 600V 72A TO247
STMicroelectronics
184
In Stock
1 : £10.17000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
72A (Tc)
-
-
-
-
±25V
-
-
-
-
-
-
Through Hole
TO-247-3
TO-247-3
TO-247-4
MOSFET N-CH 650V 72A TO247-4
STMicroelectronics
529
In Stock
1 : £10.49000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
72A (Tc)
-
39mOhm @ 36A, 10V
4.75V @ 250µA
118 nC @ 10 V
±25V
5900 pF @ 100 V
-
480W (Tc)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-247-4
TO-247-4
IXYX110N120A4
MOSFET N-CH 300V 72A TO247
IXYS
281
In Stock
780
Factory
1 : £11.09000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
300 V
72A (Tc)
10V
19mOhm @ 36A, 10V
4.5V @ 1.5mA
82 nC @ 10 V
±20V
5400 pF @ 25 V
-
390W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247 (IXTH)
TO-247-3
SCT2450KEGC11
SICFET N-CH 1200V 72A TO247N
Rohm Semiconductor
253
In Stock
1 : £61.01000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
72A (Tc)
18V
39mOhm @ 27A, 18V
5.6V @ 13.3mA
131 nC @ 18 V
+22V, -4V
2222 pF @ 800 V
-
339W (Tc)
175°C (TJ)
-
-
Through Hole
TO-247N
TO-247-3
TO-220-3
MOSFET N-CH 60V 72A TO220CFM
YAGEO XSEMI
980
In Stock
1 : £1.24000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
60 V
72A (Tc)
10V
3.5mOhm @ 30A, 10V
4V @ 250µA
125 nC @ 10 V
±20V
5440 pF @ 50 V
-
1.92W (Ta), 32.9W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220CFM
TO-220-3 Full Pack
TO-263
ELITESIC, 23 MOHM, 650 V, M3S,T2
onsemi
1,360
In Stock
1 : £6.54000
Cut Tape (CT)
800 : £2.66025
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
72A (Tc)
15V, 18V
32.6mOhm @ 21A, 18V
4V @ 10mA
74 nC @ 18 V
+22V, -8V
1950 pF @ 400 V
-
288W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
T2PAK
TO-263-8, D2PAK (7 Leads + Tab), Variant
TO-263
ELITESIC, 23 MOHM, 650 V, M3S,T2
onsemi
1,535
In Stock
1 : £8.38000
Cut Tape (CT)
800 : £3.66850
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
72A (Tc)
15V, 18V
32.6mOhm @ 21A, 18V
4V @ 10mA
74 nC @ 18 V
+22V, -8V
1950 pF @ 400 V
-
288W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
T2PAK
TO-263-8, D2PAK (7 Leads + Tab), Variant
500
In Stock
1 : £12.59000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
750 V
72A (Tc)
15V, 20V
18mOhm @ 44.7A, 20V
5.6V @ 9.8mA
59 nC @ 18 V
+23V, -7V
2085 pF @ 500 V
-
234W (Tc)
-55°C ~ 175°C
-
-
Through Hole
PG-TO247-4-U02
TO-247-4
GSGP03150
MOSFET, P-CH, SINGLE, -72A, -60V
Good-Ark Semiconductor
3,603
In Stock
1 : £0.85000
Cut Tape (CT)
3,000 : £0.40639
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Active
P-Channel
MOSFET (Metal Oxide)
60 V
72A (Tc)
4.5V, 10V
8.6mOhm @ 20A, 10V
2.5V @ 250µA
210 nC @ 10 V
±20V
12930 pF @ 25 V
-
142W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-PPAK (5.1x5.71)
8-PowerTDFN
Showing
of 67

Single FET, MOSFETs


Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

  • Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
  • Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

  1. High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
  2. Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
  3. High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.