6.2A (Ta) Single FETs, MOSFETs

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of 45

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
DMN3023L-7 MOSFET N-CH 30V 6.2A SOT23 Diodes Incorporated	88,469 In Stock 7,233,000 Factory	1 : £0.39000 Cut Tape (CT) 3,000 : £0.08318 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	6.2A (Ta)	2.5V, 10V	25mOhm @ 4A, 10V	1.8V @ 250µA	18.4 nC @ 10 V	±20V	873 pF @ 15 V	-	900mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
FDC637BNZ MOSFET N-CH 20V 6.2A SUPERSOT6 onsemi	21,976 In Stock	1 : £0.52000 Cut Tape (CT) 3,000 : £0.12015 Tape & Reel (TR)	PowerTrench®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	6.2A (Ta)	2.5V, 4.5V	24mOhm @ 6.2A, 4.5V	1.5V @ 250µA	12 nC @ 4.5 V	±12V	895 pF @ 10 V	-	1.6W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SuperSOT™-6	SOT-23-6 Thin, TSOT-23-6
AO4421 MOSFET P-CH 60V 6.2A 8SOIC Alpha & Omega Semiconductor Inc.	159,036 In Stock	1 : £0.91000 Cut Tape (CT) 3,000 : £0.23193 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	60 V	6.2A (Ta)	4.5V, 10V	40mOhm @ 6.2A, 10V	3V @ 250µA	55 nC @ 10 V	±20V	2900 pF @ 30 V	-	3.1W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
SI7850DP-T1-E3 MOSFET N-CH 60V 6.2A PPAK SO-8 Vishay Siliconix	3,775 In Stock	1 : £2.08516 Cut Tape (CT) 3,000 : £0.62151 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	6.2A (Ta)	4.5V, 10V	22mOhm @ 10.3A, 10V	3V @ 250µA	27 nC @ 10 V	±20V	-	-	1.8W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
AOSS32334C MOSFET N-CH 30V 6.2A SOT23-3 Alpha & Omega Semiconductor Inc.	6,800 In Stock	1 : £0.33000 Cut Tape (CT) 3,000 : £0.07021 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	6.2A (Ta)	4.5V, 10V	20mOhm @ 6.2A, 10V	2.3V @ 250µA	20 nC @ 10 V	±20V	600 pF @ 15 V	-	1.3W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3	3-SMD, SOT-23-3 Variant
PMN20ENAX MOSFET N-CH 40V 6.2A 6TSOP Nexperia USA Inc.	0 In Stock 232 Marketplace	1 : £0.48000 Cut Tape (CT) 3,000 : £0.11115 Tape & Reel (TR) 232 : £0.95733 Bulk	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel® Bulk	Active	N-Channel	MOSFET (Metal Oxide)	40 V	6.2A (Ta)	4.5V, 10V	23mOhm @ 6.2A, 10V	2.7V @ 250µA	17 nC @ 10 V	±20V	582 pF @ 20 V	-	652mW (Ta), 7.5W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	6-TSOP	SC-74, SOT-457
DMN3028LQ-7 MOSFET BVDSS: 25V~30V,SOT23,T&R, Diodes Incorporated	28,317 In Stock	1 : £0.53000 Cut Tape (CT) 3,000 : £0.10660 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	6.2A (Ta)	2.5V, 10V	25mOhm @ 4A, 10V	1.8V @ 250µA	10.9 nC @ 10 V	±20V	680 pF @ 15 V	-	860mW (Ta)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
FDC637AN MOSFET N-CH 20V 6.2A SUPERSOT6 onsemi	5,852 In Stock	1 : £0.85000 Cut Tape (CT) 3,000 : £0.21504 Tape & Reel (TR)	PowerTrench®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	6.2A (Ta)	2.5V, 4.5V	24mOhm @ 6.2A, 4.5V	1.5V @ 250µA	16 nC @ 4.5 V	±8V	1125 pF @ 10 V	-	1.6W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SuperSOT™-6	SOT-23-6 Thin, TSOT-23-6
SI7850DP-T1-GE3 MOSFET N-CH 60V 6.2A PPAK SO-8 Vishay Siliconix	1,721 In Stock	1 : £2.09000 Cut Tape (CT) 3,000 : £0.62151 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	6.2A (Ta)	4.5V, 10V	22mOhm @ 10.3A, 10V	3V @ 250µA	27 nC @ 10 V	±20V	-	-	1.8W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
DMN2028UVT-7 MOSFET N-CH 20V 6.2A TSOT-26 Diodes Incorporated	3,057 In Stock	1 : £0.42000 Cut Tape (CT) 3,000 : £0.08974 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	6.2A (Ta)	2.5V, 4.5V	24mOhm @ 6.2A, 4.5V	1.5V @ 250µA	8.3 nC @ 4.5 V	±8V	856 pF @ 10 V	-	1.2W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TSOT-23-6	SOT-23-6 Thin, TSOT-23-6
TK6P60W,RVQ MOSFET N CH 600V 6.2A DPAK Toshiba Semiconductor and Storage	1,990 In Stock	1 : £2.39000 Cut Tape (CT) 2,000 : £0.74860 Tape & Reel (TR)	DTMOSIV	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	6.2A (Ta)	10V	820mOhm @ 3.1A, 10V	3.7V @ 310µA	12 nC @ 10 V	±30V	390 pF @ 300 V	-	60W (Tc)	150°C (TJ)	-	-	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
TK6Q60W,S1VQ MOSFET N-CH 600V 6.2A IPAK Toshiba Semiconductor and Storage	146 In Stock	1 : £2.31000 Tube	DTMOSIV	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	6.2A (Ta)	10V	820mOhm @ 3.1A, 10V	3.7V @ 310µA	12 nC @ 10 V	±30V	390 pF @ 300 V	-	60W (Tc)	150°C (TJ)	-	-	Through Hole	IPAK	TO-251-3 Stub Leads, IPAK
DMTH6030LFDFW-7 IC Diodes Incorporated	2,558 In Stock 3,000 Factory	1 : £0.49000 Cut Tape (CT) 3,000 : £0.10862 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	6.2A (Ta)	4.5V, 10V	25mOhm @ 6.5A, 10V	2.5V @ 250µA	9.3 nC @ 10 V	±20V	452 pF @ 30 V	-	1.4W (Ta)	-55°C ~ 175°C (TJ)	-	-	Surface Mount, Wettable Flank	U-DFN2020-6 (SWP) (Type UXG)	6-UDFN Exposed Pad
AM7492N MOSFET N-CH 150V 6.2A DFN5X6 Analog Power Inc.	9,000 Marketplace	1 : £0.69000 Bulk	-	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	150 V	6.2A (Ta)	5.5V, 10V	88mOhm @ 23A, 10V	1V @ 250µA	23 nC @ 5.5 V	±20V	2599 pF @ 15 V	-	5W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-DFN (5x6)	8-PowerVDFN
FDD3860 MOSFET N-CH 100V 6.2A DPAK onsemi	3,856 In Stock	1 : £1.25000 Cut Tape (CT) 2,500 : £0.34701 Tape & Reel (TR)	PowerTrench®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	6.2A (Ta)	10V	36mOhm @ 5.9A, 10V	4.5V @ 250µA	31 nC @ 10 V	±20V	1740 pF @ 50 V	-	3.1W (Ta), 69W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
PMCM6501VPEZ SMALL SIGNAL FIELD-EFFECT TRANSI NXP Semiconductors	7,773,886 Marketplace	485 : £0.46010 Bulk	-	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	12 V	6.2A (Ta)	1.8V, 4.5V	25mOhm @ 3A, 4.5V	900mV @ 250µA	29.4 nC @ 4.5 V	±8V	1400 pF @ 6 V	-	556mW (Ta), 12.5W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	6-WLCSP (1.48x0.98)	6-XFBGA, WLCSP
AM7202N MOSFET N-CH 200V 6.2A DFN5X6 Analog Power Inc.	1,400 Marketplace	1 : £1.09000 Bulk	-	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	200 V	6.2A (Ta)	6.5V, 10V	87mOhm @ 5.2A, 10V	1V @ 250µA (Min)	60 nC @ 6.5 V	±20V	4463 pF @ 15 V	-	5W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-DFN (5x6)	8-PowerTDFN
TK6A60W,S4VX MOSFET N-CH 600V 6.2A TO220SIS Toshiba Semiconductor and Storage	30 In Stock	1 : £2.15000 Tube	DTMOSIV	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	6.2A (Ta)	10V	750mOhm @ 3.1A, 10V	3.7V @ 310µA	12 nC @ 10 V	±30V	390 pF @ 300 V	-	30W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS	TO-220-3 Full Pack
PMV15ENEAR MOSFET N-CH 30V 6.2A TO236AB Nexperia USA Inc.	0 In Stock	1 : £0.19000 Cut Tape (CT) 3,000 : £0.07609 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	6.2A (Ta)	4.5V, 10V	20mOhm @ 5.8A, 10V	2.5V @ 250µA	14 nC @ 10 V	±20V	440 pF @ 15 V	-	700mW (Ta), 8.3W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-236AB	TO-236-3, SC-59, SOT-23-3
PMV15ENER PMV15ENE/SOT23/TO-236AB Nexperia USA Inc.	0 In Stock	1 : £0.40000 Cut Tape (CT) 3,000 : £0.08931 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	6.2A (Ta)	4.5V, 10V	20mOhm @ 5.8A, 10V	2.5V @ 250µA	14 nC @ 10 V	±20V	440 pF @ 15 V	-	700mW (Ta), 8.3W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-236AB	TO-236-3, SC-59, SOT-23-3
DMP2066UFDE-7 MOSFET P-CH 20V 6.2A 6UDFN Diodes Incorporated	6 In Stock 18,000 Factory	1 : £0.50000 Cut Tape (CT) 3,000 : £0.11408 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	6.2A (Ta)	1.8V, 4.5V	36mOhm @ 4.6A, 4.5V	1.1V @ 250µA	14.4 nC @ 4.5 V	±12V	1537 pF @ 10 V	-	660mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	U-DFN2020-6 (Type E)	6-PowerUDFN
DMN3023L-13 MOSFET N-CH 30V 6.2A SOT23 Diodes Incorporated	0 In Stock 40,000 Factory Check Lead Time	1 : £0.39000 Cut Tape (CT) 10,000 : £0.07087 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	6.2A (Ta)	2.5V, 10V	25mOhm @ 4A, 10V	1.8V @ 250µA	18.4 nC @ 10 V	±20V	873 pF @ 15 V	-	900mW (Ta)	-55°C ~ 155°C (TJ)	-	-	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
DMTH6030LFDFW-13 IC Diodes Incorporated	0 In Stock Check Lead Time	1 : £0.49000 Cut Tape (CT) 10,000 : £0.09331 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	6.2A (Ta)	4.5V, 10V	25mOhm @ 6.5A, 10V	2.5V @ 250µA	9.3 nC @ 10 V	±20V	452 pF @ 30 V	-	1.4W (Ta)	-55°C ~ 175°C (TJ)	-	-	Surface Mount, Wettable Flank	U-DFN2020-6 (SWP) (Type UXG)	6-UDFN Exposed Pad
DMN2028UVT-13 MOSFET N-CH 20V 6.2A TSOT-26 Diodes Incorporated	0 In Stock Check Lead Time	10,000 : £0.07664 Tape & Reel (TR)	-	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	20 V	6.2A (Ta)	2.5V, 4.5V	24mOhm @ 6.2A, 4.5V	1.5V @ 250µA	8.3 nC @ 4.5 V	±8V	856 pF @ 10 V	-	1.2W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TSOT-23-6	SOT-23-6 Thin, TSOT-23-6
XP4P040M MOSFET P-CH 40V 6.5A 8SO YAGEO XSEMI	0 In Stock Check Lead Time	3,000 : £0.07835 Tape & Reel (TR)	-	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	40 V	6.2A (Ta)	4.5V, 10V	40mOhm @ 6A, 10V	3V @ 250µA	19.2 nC @ 4.5 V	±20V	2144 pF @ 20 V	-	2.5W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.

Single FET, MOSFETs

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