50A (Ta) Single FETs, MOSFETs

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
CSD19537Q3
MOSFET N-CH 100V 9.7A/50A 8VSON
Texas Instruments
11,738
In Stock
1 : £1.28000
Cut Tape (CT)
2,500 : £0.35378
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
50A (Ta)
6V, 10V
14.5mOhm @ 10A, 10V
3.6V @ 250µA
21 nC @ 10 V
±20V
1680 pF @ 50 V
-
2.8W (Ta), 83W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-VSON-CLIP (3.3x3.3)
8-PowerTDFN
CSD19537Q3
MOSFET N-CH 100V 50A 8VSON
Texas Instruments
122
In Stock
1 : £1.56000
Cut Tape (CT)
250 : £0.59396
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
50A (Ta)
6V, 10V
14.5mOhm @ 10A, 10V
3.6V @ 250µA
21 nC @ 10 V
±20V
1680 pF @ 50 V
-
2.8W (Ta), 83W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-VSON-CLIP (3.3x3.3)
8-PowerTDFN
2,470
In Stock
1 : £1.96000
Cut Tape (CT)
2,000 : £0.57939
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
50A (Ta)
6V, 10V
13.8mOhm @ 25A, 10V
3V @ 1mA
124 nC @ 10 V
+10V, -20V
6290 pF @ 10 V
-
90W (Tc)
175°C (TJ)
Automotive
AEC-Q101
Surface Mount
DPAK+
TO-252-3, DPAK (2 Leads + Tab), SC-63
2,500
In Stock
2,500 : £0.87696
Tape & Reel (TR)
-
Tape & Reel (TR)
Last Time Buy
N-Channel
MOSFET (Metal Oxide)
40 V
50A (Ta)
10V
3.2mOhm @ 25A, 10V
-
39 nC @ 10 V
±20V
3000 pF @ 10 V
-
65W (Tc)
150°C (TJ)
-
-
Surface Mount
LFPAK
SC-100, SOT-669
8 VSONP
MOSFET N-CHANNEL 60V 50A 8VSON
Texas Instruments
2,223
In Stock
1 : £1.76000
Cut Tape (CT)
250 : £0.67748
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
50A (Ta)
4.5V, 10V
9.8mOhm @ 14A, 10V
2.3V @ 250µA
11.1 nC @ 4.5 V
±20V
1770 pF @ 30 V
-
3.1W (Ta), 77W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-VSONP (5x6)
8-PowerTDFN
8 VSONP
MOSFET N-CH 40V 50A 8VSON
Texas Instruments
4,764
In Stock
1 : £1.88000
Cut Tape (CT)
250 : £0.72708
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
50A (Ta)
4.5V, 10V
6.6mOhm @ 17A, 10V
2.4V @ 250µA
9.2 nC @ 4.5 V
±20V
1656 pF @ 20 V
-
3.1W (Ta), 77W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-VSONP (5x6)
8-PowerTDFN
6,000
In Stock
3,000 : £0.61205
Tape & Reel (TR)
-
Tape & Reel (TR)
Active
N-Channel
MOSFET (Metal Oxide)
30 V
50A (Ta)
4.5V, 10V
2.9mOhm @ 25A, 10V
2.5V @ 1mA
34 nC @ 4.5 V
±20V
5600 pF @ 10 V
-
50W (Tc)
150°C (TJ)
-
-
Surface Mount
8-WPAK (3)
8-PowerWDFN
3,955
In Stock
1 : £2.38000
Cut Tape (CT)
2,500 : £0.74542
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
50A (Ta)
4.5V, 10V
9.6mOhm @ 25A, 10V
2.5V @ 250µA
150 nC @ 10 V
±20V
5700 pF @ 10 V
-
1.2W (Ta), 84W (Tc)
175°C
Automotive
AEC-Q101
Surface Mount
TO-252 (MP-3ZK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
0
In Stock
Check Lead Time
1 : £3.08000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
50A (Ta)
10V
11mOhm @ 25A, 10V
4V @ 1mA
59 nC @ 10 V
±20V
4150 pF @ 10 V
-
25W (Ta)
150°C
-
-
Through Hole
TO-220ABA
TO-220-3
ATPAK
MOSFET N-CH 30V 50A ATPAK
onsemi
0
In Stock
86,287
Marketplace
3,000 : £0.26845
Tape & Reel (TR)
521 : £0.42386
Bulk
-
Tape & Reel (TR)
Bulk
Obsolete
N-Channel
MOSFET (Metal Oxide)
30 V
50A (Ta)
4.5V, 10V
12mOhm @ 25A, 10V
-
27 nC @ 10 V
±20V
1650 pF @ 10 V
-
40W (Tc)
150°C (TJ)
-
-
Surface Mount
ATPAK
ATPAK (2 Leads+Tab)
BUJD103AD,118
MOSFET N-CH 30V 50A DPAK
Nexperia USA Inc.
9,725
Marketplace
466 : £0.46770
Bulk
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
30 V
50A (Ta)
-
9.8mOhm @ 12A, 10V
2.8V @ 1mA
30.5 nC @ 10 V
±16V
1760 pF @ 25 V
-
80W (Ta)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
IRG4RC10UTRPBF
N-CHANNEL POWER MOSFET
Fairchild Semiconductor
93,855
Marketplace
343 : £0.64309
Bulk
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
30 V
50A (Ta)
4.5V, 10V
7.5mOhm @ 25A, 10V
2V @ 250mA
51 nC @ 4.5 V
±12V
2418 pF @ 15 V
-
83W (Ta)
-65°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263AB
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
INFINFIPAN60R360PFD7SXKSA1
N-CHANNEL POWER MOSFET
Fairchild Semiconductor
33,223
Marketplace
308 : £0.70886
Bulk
Bulk
Obsolete
N-Channel
MOSFET (Metal Oxide)
30 V
50A (Ta)
4.5V, 10V
7.5mOhm @ 25A, 10V
2V @ 250mA
51 nC @ 4.5 V
±12V
2418 pF @ 15 V
-
83W (Ta)
-65°C ~ 175°C (TJ)
-
-
Through Hole
TO-220-3
TO-220-3
12,000
Marketplace
226 : £0.97195
Bulk
-
Bulk
Obsolete
N-Channel
MOSFET (Metal Oxide)
25 V
50A (Ta)
-
1.8mOhm @ 25A, 10V
-
31 nC @ 4.5 V
-
6130 pF @ 10 V
-
50W (Tc)
150°C (TJ)
-
-
Surface Mount
8-DFN (5x6)
8-WFDFN Exposed Pad
3,000
Marketplace
202 : £1.08891
Bulk
-
Bulk
Obsolete
N-Channel
MOSFET (Metal Oxide)
25 V
50A (Ta)
-
2.7mOhm @ 25A, 10V
2.5V @ 1mA
22 nC @ 4.5 V
-
4240 pF @ 10 V
-
-
150°C (TJ)
-
-
Surface Mount
8-WPAK
8-PowerWDFN
3,000
Marketplace
179 : £1.22777
Bulk
-
Bulk
Obsolete
N-Channel
MOSFET (Metal Oxide)
30 V
50A (Ta)
-
2.3mOhm @ 25A, 10V
-
37 nC @ 4.5 V
-
5150 pF @ 10 V
-
55W (Tc)
150°C (TJ)
-
-
Surface Mount
8-WPAK
8-WFDFN Exposed Pad
635,000
Marketplace
137 : £1.60044
Bulk
-
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
30 V
50A (Ta)
-
2.5mOhm @ 25A, 10V
-
34 nC @ 4.5 V
-
5100 pF @ 10 V
-
55W (Tc)
150°C (TJ)
-
-
Surface Mount
8-WPAK
8-PowerWDFN
4,319
In Stock
1 : £2.24000
Cut Tape (CT)
3,000 : £0.68969
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Last Time Buy
N-Channel
MOSFET (Metal Oxide)
30 V
50A (Ta)
4.5V, 10V
2.3mOhm @ 25A, 10V
-
25 nC @ 4.5 V
±20V
4720 pF @ 10 V
-
45W (Tc)
150°C (TJ)
-
-
Surface Mount
WPAK(3F) (5x6)
8-PowerVDFN
0
In Stock
Obsolete
-
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
100 V
50A (Ta)
10V
11mOhm @ 25A, 10V
4V @ 1mA
59 nC @ 10 V
±20V
4150 pF @ 10 V
-
125W (Ta)
150°C
-
-
Through Hole
TO-220ABA
TO-220-3
MDD2N60D
MOSFET N 30V 50A TO-252
MDD
640,000
Marketplace
2,500 : £0.28998
Tape & Reel (TR)
-
Tape & Reel (TR)
Active
N-Channel
MOSFET (Metal Oxide)
30 V
50A (Ta)
4.5V, 10V
9mOhm @ 20A, 10V
2.2V @ 250µA
23.6 nC @ 10 V
±20V
1015 pF @ 15 V
-
28W (Ta)
150°C (TJ)
-
-
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
MDD2N60D
MOSFET N 60V 50A TO-252
MDD
97,500
Marketplace
2,500 : £0.42883
Tape & Reel (TR)
-
Tape & Reel (TR)
Active
N-Channel
MOSFET (Metal Oxide)
60 V
50A (Ta)
4.5V, 10V
17mOhm @ 20A, 10V
2.5V @ 250µA
40 nC @ 10 V
±20V
1889 pF @ 30 V
-
62.5W (Ta)
150°C (TJ)
-
-
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
BUJD103AD,118
NEXPERIA BUK6209-30C - 50A, 30V,
Nexperia USA Inc.
12,000
Marketplace
466 : £0.46770
Bulk
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
30 V
50A (Ta)
-
9.8mOhm @ 12A, 10V
2.8V @ 1mA
30.5 nC @ 10 V
±16V
1760 pF @ 25 V
-
80W (Ta)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
BUJD103AD,118
NEXPERIA BUK6212-40C - 50A, 40V,
Nexperia USA Inc.
54,438
Marketplace
321 : £0.67966
Bulk
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
40 V
50A (Ta)
-
11.2mOhm @ 12A, 10V
2.8V @ 1mA
33.9 nC @ 10 V
±16V
1900 pF @ 25 V
-
80W
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
BUK6610-75C,118
NEXPERIA BUK6212-40C - 50A, 40V,
Nexperia USA Inc.
5,239
Marketplace
321 : £0.67966
Bulk
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
40 V
50A (Ta)
-
11.2mOhm @ 12A, 10V
2.8V @ 1mA
33.9 nC @ 10 V
±16V
1900 pF @ 25 V
-
80W
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
RJK1003DPP - N-CHANNEL MOSFET 10
RJK1003DPP - N-CHANNEL MOSFET 10
Renesas
3,408
Marketplace
110 : £1.99509
Bulk
-
Bulk
Obsolete
N-Channel
MOSFET (Metal Oxide)
100 V
50A (Ta)
10V
11mOhm @ 25A, 10V
4V @ 1mA
59 nC @ 10 V
±20V
4150 pF @ 10 V
-
25W (Tc)
150°C
-
-
Through Hole
TO-220FP
TO-220-3 Full Pack
Showing
of 43

Single FET, MOSFETs


Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

  • Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
  • Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

  1. High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
  2. Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
  3. High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.