5.6A (Tc) Single FETs, MOSFETs

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of 50

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
FDT1600N10ALZ MOSFET N-CH 100V 5.6A SOT223-4 onsemi	643 In Stock	1 : £0.94000 Cut Tape (CT) 4,000 : £0.21277 Tape & Reel (TR)	PowerTrench®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	5.6A (Tc)	5V, 10V	160mOhm @ 2.8A, 10V	2.8V @ 250µA	3.77 nC @ 10 V	±20V	225 pF @ 50 V	-	10.42W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-223-4	TO-261-4, TO-261AA
IRF510PBF MOSFET N-CH 100V 5.6A TO220AB Vishay Siliconix	15,241 In Stock	1 : £2.11000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	5.6A (Tc)	10V	540mOhm @ 3.4A, 10V	4V @ 250µA	8.3 nC @ 10 V	±20V	180 pF @ 25 V	-	43W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
IRL510PBF MOSFET N-CH 100V 5.6A TO220AB Vishay Siliconix	4,607 In Stock	1 : £1.97000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	5.6A (Tc)	4V, 5V	540mOhm @ 3.4A, 5V	2V @ 250µA	6.1 nC @ 5 V	±10V	250 pF @ 25 V	-	43W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
IRF510SPBF MOSFET N-CH 100V 5.6A D2PAK Vishay Siliconix	13,836 In Stock	1 : £2.10000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	5.6A (Tc)	10V	540mOhm @ 3.4A, 10V	4V @ 250µA	8.3 nC @ 10 V	±20V	180 pF @ 25 V	-	3.7W (Ta), 43W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IRL510PBF-BE3 MOSFET N-CH 100V 5.6A TO220AB Vishay Siliconix	967 In Stock	1 : £1.50000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	5.6A (Tc)	-	540mOhm @ 3.4A, 5V	2V @ 250µA	6.1 nC @ 5 V	±10V	250 pF @ 25 V	-	43W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
IRF510PBF-BE3 MOSFET N-CH 100V 5.6A TO220AB Vishay Siliconix	4,633 In Stock	1 : £1.62000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	5.6A (Tc)	-	540mOhm @ 3.4A, 10V	4V @ 250µA	8.3 nC @ 10 V	±20V	180 pF @ 25 V	-	43W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
IRF510STRRPBF MOSFET N-CH 100V 5.6A TO263 Vishay Siliconix	1,392 In Stock	1 : £1.62000 Cut Tape (CT) 800 : £0.52296 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	5.6A (Tc)	10V	540mOhm @ 3.4A, 10V	4V @ 250µA	8.3 nC @ 10 V	±20V	180 pF @ 25 V	-	3.7W (Ta), 43W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IRL510STRLPBF MOSFET N-CH 100V 5.6A D2PAK Vishay Siliconix	407 In Stock	1 : £1.67000 Cut Tape (CT) 800 : £0.54219 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	5.6A (Tc)	4V, 5V	540mOhm @ 3.4A, 5V	2V @ 250µA	6.1 nC @ 5 V	±10V	250 pF @ 25 V	-	3.7W (Ta), 43W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
STD6NK50ZT4 MOSFET N-CH 500V 5.6A DPAK STMicroelectronics	2,311 In Stock	1 : £1.79000 Cut Tape (CT) 2,500 : £0.51647 Tape & Reel (TR)	SuperMESH™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	500 V	5.6A (Tc)	10V	1.2Ohm @ 2.8A, 10V	4.5V @ 50µA	24.6 nC @ 10 V	±30V	690 pF @ 25 V	-	90W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRF510STRLPBF MOSFET N-CH 100V 5.6A D2PAK Vishay Siliconix	134 In Stock	1 : £1.62000 Cut Tape (CT) 800 : £0.52296 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	5.6A (Tc)	10V	540mOhm @ 3.4A, 10V	4V @ 250µA	8.3 nC @ 10 V	±20V	180 pF @ 25 V	-	43W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
G3404 MOSFET,N-CH,30V,5.6A,1.4W,SOT-23 Goford Semiconductor	2,999 In Stock	1 : £0.22000 Cut Tape (CT) 3,000 : £0.04614 Tape & Reel (TR)	Trench	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	30 V	5.6A (Tc)	4.5V, 10V	22mOhm @ 3A, 10V	2V @ 250µA	16 nC @ 10 V	±20V	568 pF @ 15 V	-	1.4W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
G3404B N30V,RD(MAX)<22M@10V,RD(MAX)<35M Goford Semiconductor	12,719 In Stock	1 : £0.26000 Cut Tape (CT) 3,000 : £0.05534 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	30 V	5.6A (Tc)	4.5V, 10V	22mOhm @ 4.2A, 10V	2V @ 250µA	2.5 nC @ 10 V	±20V	568 pF @ 15 V	-	1.4W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
3400L MOSFET N-CH 30V 5.6A SOT-23-3L Goford Semiconductor	3,000 Marketplace	3,000 : £0.03494 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	-	5.6A (Tc)	4.5V, 10V	59mOhm @ 2.8A, 2.5V	1.4V @ 250µA	-	±12V	-	-	1.4W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
3400 N30V,RD(MAX)<27M@10V,RD(MAX)<33M Goford Semiconductor	641 In Stock	1 : £0.26000 Cut Tape (CT) 3,000 : £0.05534 Tape & Reel (TR)	TrenchFET®	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	30 V	5.6A (Tc)	4.5V, 10V	27mOhm @ 3A, 10V	1.3V @ 250µA	16 nC @ 4.5 V	±12V	552 pF @ 15 V	-	1.4W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
3400L N30V,RD(MAX)<27M@10V,RD(MAX)<33M Goford Semiconductor	785 In Stock	1 : £0.31000 Cut Tape (CT) 3,000 : £0.06669 Tape & Reel (TR)	TrenchFET®	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	30 V	5.6A (Tc)	4.5V, 10V	27mOhm @ 2.8A, 10V	1.4V @ 250µA	9.5 nC @ 4.5 V	±12V	820 pF @ 15 V	-	1.4W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
SI2318CDS-T1-GE3 MOSFET N-CH 40V 5.6A SOT23-3 Vishay Siliconix	0 In Stock Check Lead Time	1 : £0.46000 Cut Tape (CT) 3,000 : £0.09755 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	40 V	5.6A (Tc)	4.5V, 10V	42mOhm @ 4.3A, 10V	2.5V @ 250µA	9 nC @ 10 V	±20V	340 pF @ 20 V	-	1.25W (Ta), 2.1W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
IRFR9120TRPBF MOSFET P-CH 100V 5.6A DPAK Vishay Siliconix	0 In Stock Check Lead Time	1 : £1.98000 Cut Tape (CT) 2,000 : £0.59875 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	100 V	5.6A (Tc)	10V	600mOhm @ 3.4A, 10V	4V @ 250µA	18 nC @ 10 V	±20V	390 pF @ 25 V	-	2.5W (Ta), 42W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRFR9120TRLPBF MOSFET P-CH 100V 5.6A DPAK Vishay Siliconix	0 In Stock Check Lead Time	1 : £1.98000 Cut Tape (CT) 3,000 : £0.57495 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	100 V	5.6A (Tc)	10V	600mOhm @ 3.4A, 10V	4V @ 250µA	18 nC @ 10 V	±20V	390 pF @ 25 V	-	2.5W (Ta), 42W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRFR9120PBF MOSFET P-CH 100V 5.6A DPAK Vishay Siliconix	0 In Stock Check Lead Time	1 : £1.98000 Tube	-	Tube	Active	P-Channel	MOSFET (Metal Oxide)	100 V	5.6A (Tc)	10V	600mOhm @ 3.4A, 10V	4V @ 250µA	18 nC @ 10 V	±20V	390 pF @ 25 V	-	2.5W (Ta), 42W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
SIHFR9120-GE3 MOSFET P-CH 100V 5.6A DPAK Vishay Siliconix	0 In Stock Check Lead Time	1 : £0.90000 Tube	-	Tube	Active	P-Channel	MOSFET (Metal Oxide)	100 V	5.6A (Tc)	10V	600mOhm @ 3.4A, 10V	4V @ 250µA	18 nC @ 10 V	±20V	390 pF @ 25 V	-	2.5W (Ta), 42W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRFR9120TRLPBF-BE3 MOSFET P-CH 100V 5.6A DPAK Vishay Siliconix	0 In Stock Check Lead Time	1 : £1.98000 Cut Tape (CT) 3,000 : £0.57495 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	100 V	5.6A (Tc)	10V	600mOhm @ 3.4A, 10V	4V @ 250µA	18 nC @ 10 V	±20V	390 pF @ 25 V	-	2.5W (Ta), 42W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRFR9120PBF-BE3 P-CHANNEL 100V Vishay Siliconix	0 In Stock Check Lead Time	1 : £1.98000 Tube	-	Tube	Active	P-Channel	MOSFET (Metal Oxide)	100 V	5.6A (Tc)	10V	600mOhm @ 3.4A, 10V	4V @ 250µA	18 nC @ 10 V	±20V	390 pF @ 25 V	-	2.5W (Ta), 42W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRFU9120PBF MOSFET P-CH 100V 5.6A TO251AA Vishay Siliconix	0 In Stock Check Lead Time	1 : £1.98000 Tube	-	Tube	Active	P-Channel	MOSFET (Metal Oxide)	100 V	5.6A (Tc)	10V	600mOhm @ 3.4A, 10V	4V @ 250µA	18 nC @ 10 V	±20V	390 pF @ 25 V	-	2.5W (Ta), 42W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-251AA	TO-251-3 Short Leads, IPAK, TO-251AA
STD9NM40N MOSFET N-CH 400V 5.6A DPAK STMicroelectronics	0 In Stock	1 : £1.89000 Cut Tape (CT) 2,500 : £0.55073 Tape & Reel (TR)	MDmesh™ II	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	400 V	5.6A (Tc)	10V	790mOhm @ 2.5A, 10V	4V @ 250µA	14 nC @ 10 V	±25V	365 pF @ 50 V	-	60W (Tc)	150°C (TJ)	-	-	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
SIHJ690N60E-T1-GE3 MOSFET N-CH 600V 5.6A PPAK SO-8 Vishay Siliconix	0 In Stock Check Lead Time	1 : £1.97000 Cut Tape (CT) 3,000 : £0.56880 Tape & Reel (TR)	E	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	5.6A (Tc)	10V	700mOhm @ 2A, 10V	5V @ 250µA	12 nC @ 10 V	±30V	347 pF @ 100 V	-	48W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.

Single FET, MOSFETs

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