47A (Tc) Single FETs, MOSFETs

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of 148

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
BSC094N06LS5ATMA1 MOSFET N-CHANNEL 60V 47A 8TDSON Infineon Technologies	12,979 In Stock	1 : £1.08000 Cut Tape (CT) 5,000 : £0.26030 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	47A (Tc)	4.5V, 10V	9.4mOhm @ 24A, 10V	2.3V @ 14µA	9.4 nC @ 4.5 V	±20V	1300 pF @ 30 V	-	36W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TDSON-8-6	8-PowerTDFN
IRLZ44NPBF MOSFET N-CH 55V 47A TO220AB Infineon Technologies	6,558 In Stock	1 : £1.32000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	55 V	47A (Tc)	4V, 10V	22mOhm @ 25A, 10V	2V @ 250µA	48 nC @ 5 V	±16V	1700 pF @ 25 V	-	3.8W (Ta), 110W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
IRLZ44NSTRLPBF MOSFET N-CH 55V 47A D2PAK Infineon Technologies	2,116 In Stock	1 : £1.56000 Cut Tape (CT) 800 : £0.49193 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	55 V	47A (Tc)	4V, 10V	22mOhm @ 25A, 10V	2V @ 250µA	48 nC @ 5 V	±16V	1700 pF @ 25 V	-	3.8W (Ta), 110W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SI7848BDP-T1-GE3 MOSFET N-CH 40V 47A PPAK SO-8 Vishay Siliconix	4,655 In Stock	1 : £2.80000 Cut Tape (CT) 3,000 : £0.92763 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	40 V	47A (Tc)	4.5V, 10V	9mOhm @ 16A, 10V	3V @ 250µA	50 nC @ 10 V	±20V	2000 pF @ 20 V	-	4.2W (Ta), 36W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
SI7848BDP-T1-E3 MOSFET N-CH 40V 47A PPAK SO-8 Vishay Siliconix	26,365 In Stock	1 : £2.90000 Cut Tape (CT) 3,000 : £0.97401 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	40 V	47A (Tc)	4.5V, 10V	9mOhm @ 16A, 10V	3V @ 250µA	50 nC @ 10 V	±20V	2000 pF @ 20 V	-	4.2W (Ta), 36W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
FQP47P06 MOSFET P-CH 60V 47A TO220-3 onsemi	1,736 In Stock	1 : £3.23000 Tube	QFET®	Tube	Active	P-Channel	MOSFET (Metal Oxide)	60 V	47A (Tc)	10V	26mOhm @ 23.5A, 10V	4V @ 250µA	110 nC @ 10 V	±25V	3600 pF @ 25 V	-	160W (Tc)	-55°C ~ 155°C (TJ)	-	-	Through Hole	TO-220-3	TO-220-3
SPW47N60C3FKSA1 MOSFET N-CH 650V 47A TO247-3 Infineon Technologies	8,394 In Stock	1 : £8.91000 Tube	CoolMOS™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	47A (Tc)	10V	70mOhm @ 30A, 10V	3.9V @ 2.7mA	320 nC @ 10 V	±20V	6800 pF @ 25 V	-	415W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-3-1	TO-247-3
IMW65R027M1HXKSA1 MOSFET 650V NCH SIC TRENCH Infineon Technologies	1,016 In Stock	1 : £9.45000 Tube	CoolSIC™ M1	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	47A (Tc)	18V	34mOhm @ 38.3A, 18V	5.7V @ 11mA	62 nC @ 18 V	+23V, -5V	2131 pF @ 400 V	-	189W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-3-41	TO-247-3
FCH47N60F-F133 MOSFET N-CH 600V 47A TO247-3 onsemi	450 In Stock 22,050 Factory	1 : £10.15000 Tube	SuperFET™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	47A (Tc)	10V	70mOhm @ 23.5A, 10V	5V @ 250µA	270 nC @ 10 V	±30V	8000 pF @ 25 V	-	417W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3
C3M0045065J1 650V 45 M SIC MOSFET Wolfspeed, Inc.	395 In Stock	1 : £10.33000 Tube	C3M™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	47A (Tc)	15V	60mOhm @ 17.6A, 15V	3.6V @ 4.84mA	61 nC @ 15 V	+19V, -8V	1621 pF @ 400 V	-	147W (Tc)	-40°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
UJ4C075033K4S 750V/33MOHM, SIC, CASCODE, G4, T onsemi	2,868 In Stock	1 : £11.18000 Tube	-	Tube	Active	N-Channel	SiCFET (Cascode SiCJFET)	750 V	47A (Tc)	12V	41mOhm @ 30A, 12V	6V @ 10mA	37.8 nC @ 15 V	±20V	1400 pF @ 400 V	-	242W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4	TO-247-4
UF3SC120040B7S 1200V/40MOHM, SIC, STACKED FAST onsemi	3,857 In Stock 1,600 Factory	1 : £23.70000 Cut Tape (CT) 800 : £15.15739 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Cascode SiCJFET)	1200 V	47A (Tc)	12V	45mOhm @ 35A, 12V	6V @ 10mA	43 nC @ 12 V	±25V	1500 pF @ 100 V	-	214W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
MCG8D8N04YL-TP N-CHANNEL MOSFET,DFN3333 MCC (Micro Commercial Components)	43,880 In Stock	1 : £0.35000 Cut Tape (CT) 5,000 : £0.07051 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	40 V	47A (Tc)	4.5V, 10V	8.8mOhm @ 35A, 10V	2.5V @ 250µA	12 nC @ 10 V	±20V	682 pF @ 30 V	-	32W (Tj)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DFN3333	8-VDFN Exposed Pad
PHB47NQ10T,118 MOSFET N-CH 100V 47A D2PAK Nexperia USA Inc.	6,264 In Stock	1 : £1.90190 Cut Tape (CT) 800 : £0.63686 Tape & Reel (TR)	TrenchMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	47A (Tc)	10V	28mOhm @ 25A, 10V	4V @ 1mA	66 nC @ 10 V	±20V	3100 pF @ 25 V	-	166W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PHB45NQ10T,118 MOSFET N-CH 100V 47A D2PAK Nexperia USA Inc.	1,558 In Stock	1 : £1.94000 Cut Tape (CT) 800 : £0.65256 Tape & Reel (TR)	TrenchMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	47A (Tc)	10V	25mOhm @ 25A, 10V	4V @ 1mA	61 nC @ 10 V	±20V	2600 pF @ 25 V	-	150W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
FQB47P06TM-AM002 MOSFET P-CH 60V 47A D2PAK onsemi	1,205 In Stock 800 Factory	1 : £3.45000 Cut Tape (CT) 800 : £1.27356 Tape & Reel (TR)	QFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	60 V	47A (Tc)	10V	26mOhm @ 23.5A, 10V	4V @ 250µA	110 nC @ 10 V	±25V	3600 pF @ 25 V	-	3.75W (Ta), 160W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IMLT65R050M2HXTMA1 SICFET N-CH 650V 47A HDSOP-16 Infineon Technologies	1,680 In Stock	1 : £5.11000 Cut Tape (CT) 1,800 : £2.08660 Tape & Reel (TR)	CoolSiC™ Gen 2	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	47A (Tc)	15V, 18V	62mOhm @ 18.2A, 18V	5.6V @ 3.7mA	22 nC @ 18 V	+23V, -7V	790 pF @ 400 V	-	227W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-HDSOP-16-6	16-PowerSOP Module
SIHG47N65E-GE3 MOSFET N-CH 650V 47A TO247AC Vishay Siliconix	500 In Stock	1 : £6.73000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	47A (Tc)	10V	72mOhm @ 24A, 10V	4V @ 250µA	273 nC @ 10 V	±30V	5682 pF @ 100 V	-	417W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AC	TO-247-3
IGLT65R035D2ATMA1 IGLT65R035D2ATMA1 Infineon Technologies	1,390 In Stock	1 : £7.42000 Cut Tape (CT) 1,800 : £3.41561 Tape & Reel (TR)	CoolGaN™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	47A (Tc)	-	-	1.6V @ 4.2mA	7.7 nC @ 3 V	-10V	540 pF @ 400 V	-	154W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-HDSOP-16-8	16-PowerSOP Module
SIHW47N60E-GE3 MOSFET N-CH 600V 47A TO247AD Vishay Siliconix	198 In Stock	1 : £7.75000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	47A (Tc)	10V	64mOhm @ 24A, 10V	4V @ 250µA	220 nC @ 10 V	±20V	9620 pF @ 100 V	-	357W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AD	TO-3P-3 Full Pack
FCA47N60 MOSFET N-CH 600V 47A TO3PN onsemi	804 In Stock	1 : £9.51000 Tube	SuperFET™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	47A (Tc)	10V	70mOhm @ 23.5A, 10V	5V @ 250µA	270 nC @ 10 V	±30V	8000 pF @ 25 V	-	417W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-3PN	TO-3P-3, SC-65-3
UJ4C075033K3S 750V/33MOHM, SIC, CASCODE, G4, T onsemi	512 In Stock	1 : £10.84000 Tube	-	Tube	Active	N-Channel	SiCFET (Cascode SiCJFET)	750 V	47A (Tc)	12V	41mOhm @ 30A, 12V	6V @ 10mA	37.8 nC @ 15 V	±20V	1400 pF @ 400 V	-	242W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3
TPH3R203NL,L1Q MOSFET N-CH 30V 47A 8SOP Toshiba Semiconductor and Storage	4,754 In Stock	1 : £1.34000 Cut Tape (CT) 5,000 : £0.33580 Tape & Reel (TR)	U-MOSVIII-H	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	47A (Tc)	4.5V, 10V	3.2mOhm @ 23.5A, 10V	2.3V @ 300µA	21 nC @ 10 V	±20V	2100 pF @ 15 V	-	1.6W (Ta), 44W (Tc)	150°C (TJ)	-	-	Surface Mount	8-SOP Advance (5x5)	8-PowerVDFN
HUF76429S3ST MOSFET N-CH 60V 47A D2PAK onsemi	2,753 In Stock	1 : £1.97000 Cut Tape (CT) 800 : £0.66090 Tape & Reel (TR)	UltraFET™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	47A (Tc)	4.5V, 10V	22mOhm @ 47A, 10V	3V @ 250µA	46 nC @ 10 V	±16V	1480 pF @ 25 V	-	110W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SIHB053N60E-GE3 E SERIES POWER MOSFET D2PAK (TO- Vishay Siliconix	820 In Stock	1 : £5.15000 Tube	E	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	47A (Tc)	10V	54mOhm @ 26.5A, 10V	5V @ 250µA	92 nC @ 10 V	±30V	3722 pF @ 100 V	-	278W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.

Single FET, MOSFETs

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