46A (Tc) Single FETs, MOSFETs

Results: 99
Stocking Options
Environmental Options
Media
Exclude
99Results
Applied FiltersRemove All

Showing
of 99
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
PG-TDSON-8-7
MOSFET N-CH 60V 46A TDSON-8-6
Infineon Technologies
14,237
In Stock
1 : £1.07000
Cut Tape (CT)
5,000 : £0.25727
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
46A (Tc)
6V, 10V
9.7mOhm @ 40A, 10V
3.3V @ 14µA
15 nC @ 10 V
±20V
1075 pF @ 30 V
-
2.5W (Ta), 36W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TDSON-8-6
8-PowerTDFN
5,387
In Stock
1 : £1.28000
Cut Tape (CT)
2,500 : £0.34166
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
46A (Tc)
4.5V, 10V
6.7mOhm @ 23A, 10V
2.5V @ 300µA
26 nC @ 10 V
±20V
1990 pF @ 30 V
-
66W (Tc)
175°C
-
-
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
PowerPak SO-8L
MOSFET N-CH 80V 46A PPAK SO-8
Vishay Siliconix
29,324
In Stock
1 : £1.30000
Cut Tape (CT)
3,000 : £0.35091
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
46A (Tc)
4.5V, 10V
12.5mOhm @ 10A, 10V
2.5V @ 250µA
35 nC @ 10 V
±20V
2100 pF @ 25 V
-
55W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
SIR401DP-T1-GE3
MOSFET P-CH 40V 46A PPAK SO-8
Vishay Siliconix
1,638
In Stock
1 : £1.34000
Cut Tape (CT)
3,000 : £0.36509
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
46A (Tc)
4.5V, 10V
10mOhm @ 15A, 10V
2.3V @ 250µA
144 nC @ 10 V
±20V
4150 pF @ 20 V
-
5W (Ta), 39W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
SQJA80EP-T1_GE3
MOSFET P-CH 80V 46A PPAK SO-8
Vishay Siliconix
337
In Stock
1 : £2.20000
Cut Tape (CT)
3,000 : £0.67076
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
80 V
46A (Tc)
4.5V, 10V
17.3mOhm @ 10A, 10V
2.5V @ 250µA
80 nC @ 10 V
±20V
5900 pF @ 25 V
-
68W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
PG-TO263-3
MOSFET N-CH 650V 46A TO263-3
Infineon Technologies
5,809
In Stock
1 : £7.55000
Cut Tape (CT)
1,000 : £3.49401
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
650 V
46A (Tc)
10V
45mOhm @ 24.9A, 10V
4V @ 1.25mA
93 nC @ 10 V
±20V
4340 pF @ 400 V
-
227W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-247-3
SICFET N-CH 900V 46A TO247-3
onsemi
1,213
In Stock
34,650
Factory
1 : £9.95000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
900 V
46A (Tc)
15V
84mOhm @ 20A, 15V
4.3V @ 5mA
87 nC @ 15 V
+19V, -10V
1770 pF @ 450 V
-
221W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TO-247-3
MOSFET N-CH 800V 46A TO247
STMicroelectronics
131
In Stock
1 : £11.29000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
800 V
46A (Tc)
10V
80mOhm @ 23A, 10V
5V @ 100µA
92 nC @ 10 V
±30V
3230 pF @ 100 V
-
446W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
PSMNR82-30YLEX
MOSFET N-CH 40V 46A LFPAK56
Nexperia USA Inc.
14,708
In Stock
1 : £0.78000
Cut Tape (CT)
1,500 : £0.21046
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
46A (Tc)
10V
14mOhm @ 5A, 10V
4V @ 1mA
12 nC @ 10 V
±20V
702 pF @ 20 V
-
56W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
8 PowerVDFN
MOSFET N-CH 100V 46A POWERFLAT
STMicroelectronics
12,715
In Stock
1 : £1.39000
Cut Tape (CT)
3,000 : £0.35540
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
46A (Tc)
10V
18mOhm @ 6A, 10V
4.5V @ 250µA
25 nC @ 10 V
20V
1640 pF @ 50 V
-
5W (Ta), 72W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PowerFlat™ (5x6)
8-PowerVDFN
DPAK
MOSFET P-CH 40V 46A DPAK
STMicroelectronics
1,102
In Stock
1 : £1.43000
Cut Tape (CT)
2,500 : £0.40177
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
46A (Tc)
4.5V, 10V
15mOhm @ 23A, 10V
2.5V @ 250µA
34 nC @ 4.5 V
±20V
3525 pF @ 25 V
-
70W (Tc)
175°C (TJ)
-
-
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
SI9407BDY-T1-GE3
MOSFET N-CH 20V 46A 8SO
Vishay Siliconix
911
In Stock
1 : £1.61000
Cut Tape (CT)
2,500 : £0.46240
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
46A (Tc)
4.5V, 10V
2mOhm @ 15A, 10V
2.2V @ 250µA
110 nC @ 10 V
±20V
4560 pF @ 10 V
-
3.5W (Ta), 7.8W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
IRFB4127PBFXKMA1
MOSFET N-CH 250V 46A TO220AB
Infineon Technologies
986
In Stock
1 : £2.47000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
250 V
46A (Tc)
10V
46mOhm @ 26A, 10V
5V @ 250µA
110 nC @ 10 V
±30V
4560 pF @ 25 V
-
330W (Tc)
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
235
In Stock
1 : £6.46000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
46A (Tc)
15V, 20V
36mOhm @ 22.9A, 20V
5.6V @ 4.6mA
28 nC @ 18 V
+23V, -7V
997 pF @ 400 V
-
172W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-3-40
TO-247-3
IHW15N120R3FKSA1
MOSFET N-CH 650V 46A TO247-3
Infineon Technologies
1,537
In Stock
1 : £6.64000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
46A (Tc)
10V
45mOhm @ 24.9A, 10V
4V @ 1.25mA
93 nC @ 10 V
±20V
4340 pF @ 400 V
-
227W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO247-3-1
TO-247-3
1,212
In Stock
1 : £6.69000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
46A (Tc)
15V, 20V
36mOhm @ 22.9A, 20V
5.6V @ 4.6mA
28 nC @ 18 V
+23V, -7V
997 pF @ 400 V
-
172W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-8
TO-247-4
PG-TO220-3-1
MOSFET N-CH 650V 46A TO220-3
Infineon Technologies
482
In Stock
1 : £7.31000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
46A (Tc)
10V
45mOhm @ 24.9A, 10V
4V @ 1.25mA
93 nC @ 10 V
±20V
4340 pF @ 400 V
-
227W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO220-3
TO-220-3
PSMNR82-30YLEX
MOSFET N-CH 55V 46A LFPAK56
Nexperia USA Inc.
1,834
In Stock
1 : £1.10000
Cut Tape (CT)
1,500 : £0.31295
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
55 V
46A (Tc)
5V
17.3mOhm @ 20A, 10V
2V @ 1mA
18 nC @ 5 V
±15V
1992 pF @ 25 V
-
85W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
TO-220FP
MOSFET N-CH 60V 46A TO220FP
STMicroelectronics
199
In Stock
1 : £1.31000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
60 V
46A (Tc)
10V
5.6mOhm @ 23A, 10V
4V @ 250µA
30 nC @ 10 V
±20V
1980 pF @ 25 V
-
25W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220FP
TO-220-3 Full Pack
10,076
In Stock
1 : £1.82000
Cut Tape (CT)
2,500 : £0.51502
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
46A (Tc)
4.5V, 10V
16mOhm @ 8A, 10V
2.5V @ 250µA
73 nC @ 10 V
±20V
4431 pF @ 50 V
-
83W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-PDFN (5x6)
8-PowerTDFN
IRFP254PBF
MOSFET N-CH 200V 46A TO247-3
Vishay Siliconix
144
In Stock
1 : £5.36000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
200 V
46A (Tc)
10V
55mOhm @ 28A, 10V
4V @ 250µA
230 nC @ 10 V
±20V
5200 pF @ 25 V
-
280W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247AC
TO-247-3
IMW65R039M1HXKSA1
SILICON CARBIDE MOSFET, PG-TO247
Infineon Technologies
116
In Stock
1 : £7.04000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
46A (Tc)
18V
50mOhm @ 25A, 18V
5.7V @ 7.5mA
41 nC @ 18 V
+20V, -2V
1393 pF @ 400 V
-
176W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-3-41
TO-247-3
TO-247-4
MOSFET N-CH 650V 46A TO247
Infineon Technologies
418
In Stock
1 : £8.36000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
46A (Tc)
10V
45mOhm @ 24.9A, 10V
4V @ 1.25mA
93 nC @ 10 V
±20V
4340 pF @ 400 V
-
227W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO247
TO-247-4
TO-247-3
MOSFET N-CH 650V 46A TO247-3
onsemi
5,490
In Stock
62,550
Factory
1 : £9.33000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
46A (Tc)
10V
65mOhm @ 23A, 10V
5V @ 4.6mA
98 nC @ 10 V
±30V
4075 pF @ 400 V
-
337W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
PowerPak SO-8L
MOSFET N-CH 80V 46A PPAK SO-8
Vishay Siliconix
449
In Stock
1 : £1.30000
Cut Tape (CT)
3,000 : £0.35091
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
46A (Tc)
10V
13.5mOhm @ 10A, 10V
3.5V @ 250µA
35 nC @ 10 V
±20V
2000 pF @ 25 V
-
55W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
Showing
of 99

Single FET, MOSFETs


Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

  • Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
  • Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

  1. High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
  2. Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
  3. High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.