40A (Ta), 100A (Tc) Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
BSC009NE2LS5IATMA1 MOSFET N-CH 25V 40A/100A TDSON Infineon Technologies	410 In Stock	1 : £2.07000 Cut Tape (CT) 5,000 : £0.62314 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	25 V	40A (Ta), 100A (Tc)	4.5V, 10V	0.95mOhm @ 30A, 10V	2V @ 250µA	49 nC @ 10 V	±16V	3200 pF @ 12 V	-	2.5W (Ta), 74W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TDSON-8-7	8-PowerTDFN
BSC010N04LS6ATMA1 MOSFET N-CH 40V 40A/100A TDSON Infineon Technologies	4,767 In Stock	1 : £2.08000 Cut Tape (CT) 5,000 : £0.63062 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	40 V	40A (Ta), 100A (Tc)	4.5V, 10V	1mOhm @ 50A, 10V	2.3V @ 250µA	67 nC @ 4.5 V	±20V	4600 pF @ 20 V	-	3W (Ta), 150W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TDSON-8-6	8-PowerTDFN
IRFH5300TRPBF MOSFET N-CH 30V 40A/100A 8PQFN Infineon Technologies	10,197 In Stock	1 : £1.50000 Cut Tape (CT) 4,000 : £0.40178 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	40A (Ta), 100A (Tc)	4.5V, 10V	1.4mOhm @ 50A, 10V	2.35V @ 150µA	120 nC @ 10 V	±20V	7200 pF @ 15 V	-	3.6W (Ta), 250W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-PQFN (5x6)	8-PowerVDFN
CSD17559Q5 MOSFET N-CH 30V 40A/100A 8VSON Texas Instruments	1,359 In Stock 1,100 Marketplace	1 : £2.90000 Cut Tape (CT) 2,500 : £0.90274 Tape & Reel (TR) 229 : £1.04537 Bulk	NexFET™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel® Bulk	Active	N-Channel	MOSFET (Metal Oxide)	30 V	40A (Ta), 100A (Tc)	4.5V, 10V	1.15mOhm @ 40A, 10V	1.7V @ 250µA	51 nC @ 4.5 V	±20V	9200 pF @ 15 V	-	3.2W (Ta), 96W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-VSON-CLIP (5x6)	8-PowerTDFN
IRFH5250DTRPBF IRFH5250 - 12V-300V N-CHANNEL PO International Rectifier	902 Marketplace	362 : £0.66235 Bulk	HEXFET®	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	25 V	40A (Ta), 100A (Tc)	4.5V, 10V	1.4mOhm @ 50A, 10V	2.35V @ 150µA	83 nC @ 10 V	±20V	6115 pF @ 13 V	-	3.6W (Ta), 156W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-PQFN (5x6)	8-PowerVDFN
AONS62814T N Alpha & Omega Semiconductor Inc.	0 In Stock Check Lead Time	3,000 : £0.86937 Tape & Reel (TR)	AlphaSGT™	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	60 V	40A (Ta), 100A (Tc)	6V, 10V	2.6mOhm @ 20A, 10V	3.2V @ 250µA	100 nC @ 10 V	±20V	4940 pF @ 40 V	-	8.8W (Ta), 258W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	8-DFN (5x6)	8-PowerSMD, Flat Leads
IRFH5300TR2PBF MOSFET N-CH 30V 40A PQFN Infineon Technologies	0 In Stock	1 : £2.05000 Cut Tape (CT)	-	Cut Tape (CT) Digi-Reel®	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	40A (Ta), 100A (Tc)	-	1.4mOhm @ 50A, 10V	2.35V @ 150µA	120 nC @ 10 V	-	7200 pF @ 15 V	-	-	-	-	-	Surface Mount	PQFN (5x6) Single Die	8-PowerVDFN
IRFH5250DTR2PBF MOSFET N-CH 25V 40A 8VQFN Infineon Technologies	0 In Stock	1 : £2.26000 Cut Tape (CT)	-	Cut Tape (CT)	Obsolete	N-Channel	MOSFET (Metal Oxide)	25 V	40A (Ta), 100A (Tc)	-	1.4mOhm @ 50A, 10V	2.35V @ 150µA	83 nC @ 10 V	-	6115 pF @ 13 V	-	-	-	-	-	Surface Mount	8-PQFN (5x6)	8-PowerVDFN
IRFH5250DTRPBF MOSFET N-CH 25V 40A/100A 8PQFN Infineon Technologies	0 In Stock	Obsolete	HEXFET®	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	25 V	40A (Ta), 100A (Tc)	4.5V, 10V	1.4mOhm @ 50A, 10V	2.35V @ 150µA	83 nC @ 10 V	±20V	6115 pF @ 13 V	-	3.6W (Ta), 156W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-PQFN (5x6)	8-PowerVDFN

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.