400A (Ta) Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
XPQR3004PB,LXHQ 40V U-MOS IX-H L-TOGL 0.3MOHM Toshiba Semiconductor and Storage	2,434 In Stock	1 : £5.36000 Cut Tape (CT) 1,500 : £2.22894 Tape & Reel (TR)	U-MOSIX-H	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	40 V	400A (Ta)	6V, 10V	0.3mOhm @ 200A, 10V	3V @ 1mA	295 nC @ 10 V	±20V	26910 pF @ 10 V	-	750W (Tc)	175°C	Automotive	AEC-Q101	Surface Mount	L-TOGL™	8-PowerBSFN
PSMN1R3-100ASFJ NEXTPOWER 100 V, 1.3 MOHM, N-CHA Nexperia USA Inc.	517 In Stock	1 : £5.93000 Cut Tape (CT) 1,000 : £2.55506 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	400A (Ta)	7V, 10V	1.3mOhm @ 25A, 10V	4V @ 1mA	248 nC @ 10 V	±20V	17737 pF @ 50 V	-	1.071kW (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	CCPAK1212	12-BESOP (0.370", 9.40mm Width), Exposed Pad
PSMN1R4-100CSFJ NEXTPOWER 100 V, 1.35 MOHM, N-CH Nexperia USA Inc.	228 In Stock	1 : £5.93000 Cut Tape (CT) 1,000 : £2.55506 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	400A (Ta)	7V, 10V	1.35mOhm @ 25A, 10V	4V @ 1mA	248 nC @ 10 V	±20V	17737 pF @ 50 V	-	1.071kW (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	CCPAK1212i	12-BESOP (0.370", 9.40mm Width), Exposed Pad
PSMN1R1-80CSFJ NEXTPOWER 80 V, 1.16 MOHM, N-CHA Nexperia USA Inc.	250 In Stock	1 : £6.09000 Cut Tape (CT) 1,000 : £2.64915 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	80 V	400A (Ta)	7V, 10V	1.16mOhm @ 25A, 10V	4V @ 1mA	206 nC @ 10 V	±20V	15363 pF @ 40 V	-	1.071kW (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	CCPAK1212i	12-BESOP (0.370", 9.40mm Width), Exposed Pad

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.