39A (Tc) Single FETs, MOSFETs

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
PSMNR82-30YLEX
MOSFET P-CH 40V 39A LFPAK56
Nexperia USA Inc.
9,012
In Stock
1 : £1.12000
Cut Tape (CT)
1,500 : £0.31577
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
39A (Tc)
4.5V, 10V
24mOhm @ 8.2A, 10V
3V @ 250µA
35 nC @ 10 V
±20V
1250 pF @ 20 V
-
66W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
BUK7626-100B,118
MOSFET N-CH 100V 39A D2PAK
Nexperia USA Inc.
4,407
In Stock
1 : £1.92000
Cut Tape (CT)
800 : £0.63671
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
39A (Tc)
4.5V, 10V
39mOhm @ 25A, 10V
2V @ 1mA
48 nC @ 5 V
±15V
3072 pF @ 25 V
-
158W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SI9407BDY-T1-GE3
MOSFET N-CH 30V 39A 8SO
Vishay Siliconix
15,267
In Stock
1 : £2.53000
Cut Tape (CT)
2,500 : £0.78380
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
39A (Tc)
4.5V, 10V
2.75mOhm @ 15A, 10V
2.5V @ 250µA
105 nC @ 10 V
±20V
4405 pF @ 15 V
-
3.5W (Ta), 7.8W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
BUK7626-100B,118
MOSFET N-CH 200V 39A D2PAK
Nexperia USA Inc.
1,864
In Stock
1 : £2.84000
Cut Tape (CT)
800 : £1.00234
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
200 V
39A (Tc)
10V
57mOhm @ 17A, 10V
4V @ 1mA
96 nC @ 10 V
±20V
3750 pF @ 25 V
-
250W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPW65R099CFD7AXKSA1
MOSFET 650V NCH SIC TRENCH
Infineon Technologies
250
In Stock
1 : £7.42000
Tube
Tube
Not For New Designs
N-Channel
SiCFET (Silicon Carbide)
650 V
39A (Tc)
18V
64mOhm @ 20.1A, 18V
5.7V @ 6mA
33 nC @ 18 V
+23V, -5V
1118 pF @ 400 V
-
125W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO247-3-41
TO-247-3
BUK7M6R7-40HX
MOSFET N-CH 30V 39A LFPAK33
Nexperia USA Inc.
1,697
In Stock
1 : £0.59000
Cut Tape (CT)
1,500 : £0.15000
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
39A (Tc)
4.5V, 10V
13.6mOhm @ 10A, 10V
1.95V @ 1mA
8 nC @ 10 V
±20V
519 pF @ 15 V
-
38W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
LFPAK33
SOT-1210, 8-LFPAK33 (5-Lead)
TO-220F-3
MOSFET N-CH 200V 39A TO220F
onsemi
5,744
In Stock
1 : £2.22000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
200 V
39A (Tc)
10V
66mOhm @ 19.5A, 10V
5V @ 250µA
49 nC @ 10 V
±30V
2130 pF @ 25 V
-
37W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220F-3
TO-220-3 Full Pack
TO-220-3
MOSFET N-CH 600V 39A TO220-3F
Alpha & Omega Semiconductor Inc.
250
In Stock
1 : £6.14000
Tube
Tube
Last Time Buy
N-Channel
MOSFET (Metal Oxide)
600 V
39A (Tc)
10V
99mOhm @ 21A, 10V
3.8V @ 250µA
40 nC @ 10 V
±30V
2154 pF @ 100 V
-
37.9W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220F
TO-220-3 Full Pack
IMZA65R048M1HXKSA1
MOSFET 650V NCH SIC TRENCH
Infineon Technologies
575
In Stock
1 : £7.60000
Tube
Tube
Not For New Designs
N-Channel
SiCFET (Silicon Carbide)
650 V
39A (Tc)
18V
64mOhm @ 20.1A, 18V
5.7V @ 6mA
33 nC @ 18 V
+23V, -5V
1118 pF @ 400 V
-
125W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO247-4-3
TO-247-4
SCT2450KEGC11
SICFET N-CH 650V 39A TO247N
Rohm Semiconductor
862
In Stock
1 : £12.17000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
39A (Tc)
18V
78mOhm @ 13A, 18V
5.6V @ 6.67mA
58 nC @ 18 V
+22V, -4V
852 pF @ 500 V
-
165W (Tc)
175°C (TJ)
-
-
Through Hole
TO-247N
TO-247-3
SOT-227B
MOSFET N-CH 800V 39A SOT-227B
IXYS
263
In Stock
1 : £28.98000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
800 V
39A (Tc)
10V
190mOhm @ 500mA, 10V
5V @ 8mA
200 nC @ 10 V
±30V
12000 pF @ 25 V
-
694W (Tc)
-55°C ~ 150°C (TJ)
-
-
Chassis Mount
SOT-227B
SOT-227-4, miniBLOC
RQ3E120ATTB
NCH 100V 39A, HSMT8, POWER MOSFE
Rohm Semiconductor
13,890
In Stock
1 : £2.50000
Cut Tape (CT)
3,000 : £0.75556
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
39A (Tc)
6V, 10V
15.5mOhm @ 10A, 10V
4V @ 1mA
36 nC @ 10 V
±20V
2040 pF @ 50 V
-
32W (Tc)
150°C (TJ)
-
-
Surface Mount
8-HSMT (3.2x3)
8-PowerVDFN
TO-247-3
SICFET N-CH 700V 39A TO247-3
Microchip Technology
318
In Stock
1 : £4.13000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
700 V
39A (Tc)
20V
75mOhm @ 20A, 20V
2.4V @ 1mA
56 nC @ 20 V
+23V, -10V
1175 pF @ 700 V
-
143W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TOLL
SIC, MOSFET, 60M, 650V, TOLL, IN
Wolfspeed, Inc.
1,106
In Stock
1 : £6.68000
Cut Tape (CT)
2,000 : £2.97327
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
39A (Tc)
15V
79mOhm @ 13.2A, 15V
3.6V @ 3.64mA
46 nC @ 15 V
+19V, -8V
1170 pF @ 400 V
-
131W (Tc)
-40°C ~ 175°C (TJ)
-
-
Surface Mount
TOLL
8-PowerSFN
PG-VSON-4
MOSFET N-CH 600V 39A 4VSON
Infineon Technologies
3,031
In Stock
1 : £4.31000
Cut Tape (CT)
3,000 : £1.52044
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
39A (Tc)
10V
85mOhm @ 11.8A, 10V
4V @ 590µA
51 nC @ 10 V
±20V
2180 pF @ 400 V
-
154W (Tc)
-40°C ~ 150°C (TJ)
-
-
Surface Mount
PG-VSON-4
4-PowerTSFN
PG-TO263-7-12
SILICON CARBIDE MOSFET PG-TO263-
Infineon Technologies
991
In Stock
1 : £6.50000
Cut Tape (CT)
1,000 : £2.62258
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
SiCFET (Silicon Carbide)
650 V
39A (Tc)
18V
74mOhm @ 16.7A, 18V
5.7V @ 5mA
28 nC @ 18 V
+23V, -5V
930 pF @ 400 V
-
161W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
SCT2450KEGC11
SICFET N-CH 650V 39A TO247N
Rohm Semiconductor
377
In Stock
1 : £20.45000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
39A (Tc)
18V
78mOhm @ 13A, 18V
5.6V @ 6.67mA
58 nC @ 18 V
+22V, -4V
852 pF @ 500 V
-
165W
175°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-247N
TO-247-3
TO-220-3 Full Pack, Isolated Tab
600V/ 99M / 39A/ EASY TO DRIVER
Panjit International Inc.
1,969
In Stock
1 : £3.25000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
39A (Tc)
10V
99mOhm @ 19.5A, 10V
4V @ 250µA
60 nC @ 10 V
±30V
2568 pF @ 400 V
-
34W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
ITO-220AB-F
TO-220-3 Full Pack, Isolated Tab
8 Power VDFN
N CHANNEL 600V 51MOHM TYP 39A
STMicroelectronics
280
In Stock
1 : £5.22000
Cut Tape (CT)
3,000 : £1.96226
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
39A (Tc)
10V
65mOhm @ 19.5A, 10V
4.5V @ 250µA
66 nC @ 10 V
±30V
3350 pF @ 400 V
-
202W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerFlat™ (8x8) HV
4-PowerVDFN
TO-220-3
600V/ 99M / 39A/ EASY TO DRIVER
Panjit International Inc.
2,000
In Stock
1 : £7.11000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
39A (Tc)
10V
99mOhm @ 19.5A, 10V
4V @ 250µA
60 nC @ 10 V
±30V
2568 pF @ 400 V
-
308W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220AB-L
TO-220-3
8 PowerSFN TOLL
N-CH SIC MOSFET, 650 V, 0.048 (T
Toshiba Semiconductor and Storage
1,986
In Stock
1 : £22.00000
Cut Tape (CT)
2,000 : £12.68963
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
39A (Tc)
18V
71mOhm @ 20A, 18V
5V @ 1.6mA
41 nC @ 18 V
+25V, -10V
1362 pF @ 400 V
-
132W (Tc)
175°C
-
-
Surface Mount
TOLL
8-PowerSFN
8-Power VDFN
PXN014-60QLA/SOT8002/MLPAK33
Nexperia USA Inc.
1,982
In Stock
1 : £0.49000
Cut Tape (CT)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Discontinued at DigiKey
N-Channel
MOSFET (Metal Oxide)
60 V
39A (Tc)
4.5V, 10V
14mOhm @ 10A, 10V
2.2V @ 250µA
5.9 nC @ 4.5 V
±20V
-
-
43W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
MLPAK33
8-PowerVDFN
IRG4RC10UTRPBF
MOSFET N-CH 100V 39A D2PAK
Fairchild Semiconductor
12,648
Marketplace
413 : £0.54092
Bulk
Bulk
Obsolete
N-Channel
MOSFET (Metal Oxide)
100 V
39A (Tc)
4.5V, 10V
35mOhm @ 39A, 10V
3V @ 250µA
67 nC @ 10 V
±16V
1820 pF @ 25 V
-
145W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-220F
MOSFET N-CH 200V 39A TO220F
onsemi
0
In Stock
4,000
Marketplace
Obsolete
-
Tube
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
200 V
39A (Tc)
10V
66mOhm @ 19.5A, 10V
5V @ 250µA
49 nC @ 10 V
±30V
2130 pF @ 25 V
-
37W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220F
TO-220-3 Full Pack
TO-220-3
MOSFET N-CH 200V 39A TO220-3
onsemi
0
In Stock
33,980
Marketplace
Obsolete
Tube
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
200 V
39A (Tc)
10V
66mOhm @ 19.5A, 10V
5V @ 250µA
49 nC @ 10 V
±30V
2130 pF @ 25 V
-
251W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220-3
TO-220-3
Showing
of 70

Single FET, MOSFETs


Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

  • Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
  • Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

  1. High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
  2. Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
  3. High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.