37.9A (Tc) Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
IPP60R099C6XKSA1 MOSFET N-CH 600V 37.9A TO220-3 Infineon Technologies	1,005 In Stock	1 : £5.22000 Tube	CoolMOS™	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	600 V	37.9A (Tc)	10V	99mOhm @ 18.1A, 10V	3.5V @ 1.21mA	119 nC @ 10 V	±20V	2660 pF @ 100 V	-	278W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-3	TO-220-3
IPW60R099P6XKSA1 MOSFET N-CH 600V 37.9A TO247-3 Infineon Technologies	218 In Stock	1 : £4.91000 Tube	CoolMOS™ P6	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	37.9A (Tc)	10V	99mOhm @ 14.5A, 10V	4.5V @ 1.21mA	70 nC @ 10 V	±20V	3330 pF @ 100 V	-	278W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-3	TO-247-3
IPA60R099P6XKSA1 MOSFET N-CH 600V 37.9A TO220-FP Infineon Technologies	318 In Stock	1 : £4.69000 Tube	CoolMOS™ P6	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	37.9A (Tc)	10V	99mOhm @ 14.5A, 10V	4.5V @ 1.21mA	70 nC @ 10 V	±20V	3330 pF @ 100 V	-	34W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-FP	TO-220-3 Full Pack
IPW60R099C6FKSA1 MOSFET N-CH 600V 37.9A TO247-3 Infineon Technologies	596 In Stock	1 : £5.87000 Tube	CoolMOS™	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	600 V	37.9A (Tc)	10V	99mOhm @ 18.1A, 10V	3.5V @ 1.21mA	119 nC @ 10 V	±20V	2660 pF @ 100 V	-	278W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-3-1	TO-247-3
IPZ60R099P6FKSA1 MOSFET N-CH 600V 37.9A TO247-4 Infineon Technologies	188 In Stock	1 : £5.47000 Tube	CoolMOS™ P6	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	37.9A (Tc)	10V	99mOhm @ 14.5A, 10V	4.5V @ 1.21mA	70 nC @ 10 V	±20V	3330 pF @ 100 V	-	278W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-4	TO-247-4
IPB60R099C6ATMA1 MOSFET N-CH 600V 37.9A D2PAK Infineon Technologies	0 In Stock	1 : £5.22000 Cut Tape (CT) 1,000 : £2.17924 Tape & Reel (TR)	CoolMOS™ C6	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	600 V	37.9A (Tc)	10V	99mOhm @ 18.1A, 10V	3.5V @ 1.21mA	119 nC @ 10 V	±20V	2660 pF @ 100 V	-	278W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPP60R099P6XKSA1 MOSFET N-CH 600V 37.9A TO220-3 Infineon Technologies	0 In Stock Check Lead Time	500 : £1.89462 Tube	CoolMOS™ P6	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	37.9A (Tc)	10V	99mOhm @ 14.5A, 10V	4.5V @ 1.21mA	70 nC @ 10 V	±20V	3330 pF @ 100 V	-	278W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-3	TO-220-3
IPA60R099C6XKSA1 MOSFET N-CH 600V 37.9A TO220-FP Infineon Technologies	0 In Stock	500 : £3.44630 Tube	CoolMOS™	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	600 V	37.9A (Tc)	10V	99mOhm @ 18.1A, 10V	3.5V @ 1.21mA	119 nC @ 10 V	±20V	2660 pF @ 100 V	-	35W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-FP	TO-220-3 Full Pack
IPZ60R125P6FKSA1 MOSFET N-CH 600V 37.9A TO247-4 Infineon Technologies	0 In Stock	Obsolete	CoolMOS™ P6	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	600 V	37.9A (Tc)	10V	99mOhm @ 14.5A, 10V	4.5V @ 1.21mA	70 nC @ 10 V	±20V	3330 pF @ 100 V	-	219W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-4	TO-247-4

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.