33A (Tc) Single FETs, MOSFETs

Results: 144
Stocking Options
Environmental Options
Media
Exclude
144Results
Applied FiltersRemove All

Showing
of 144
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
IRFB4127PBFXKMA1
MOSFET N-CH 100V 33A TO220AB
Infineon Technologies
8,878
In Stock
1 : £1.43000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
33A (Tc)
10V
44mOhm @ 16A, 10V
4V @ 250µA
71 nC @ 10 V
±20V
1960 pF @ 25 V
-
130W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
TO-252AA (DPAK)
MOSFET N-CH 150V 33A DPAK
Infineon Technologies
7,733
In Stock
1 : £1.61000
Cut Tape (CT)
3,000 : £0.44674
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
33A (Tc)
10V
42mOhm @ 21A, 10V
5V @ 100µA
26 nC @ 10 V
±20V
1750 pF @ 50 V
-
144W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-252AA (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
MOSFET N-CH 100V 33A D2PAK
Infineon Technologies
17,924
In Stock
1 : £1.79000
Cut Tape (CT)
800 : £0.58648
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
33A (Tc)
10V
44mOhm @ 16A, 10V
4V @ 250µA
71 nC @ 10 V
±20V
1960 pF @ 25 V
-
130W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-220-3
MOSFET N-CH 250V 33A TO220-3
onsemi
1,146
In Stock
1 : £2.16000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
250 V
33A (Tc)
10V
94mOhm @ 16.5A, 10V
5V @ 250µA
48 nC @ 10 V
±30V
2135 pF @ 25 V
-
235W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220-3
TO-220-3
TO-220F-3
MOSFET N-CH 250V 33A TO220F
onsemi
9,345
In Stock
1 : £2.46000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
250 V
33A (Tc)
10V
94mOhm @ 16.5A, 10V
5V @ 250µA
48 nC @ 10 V
±30V
2135 pF @ 25 V
-
37W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220F-3
TO-220-3 Full Pack
TO-263
MOSFET N-CH 250V 33A D2PAK
onsemi
15,644
In Stock
1 : £2.50000
Cut Tape (CT)
800 : £0.80645
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
250 V
33A (Tc)
10V
94mOhm @ 16.5A, 10V
5V @ 250µA
48 nC @ 10 V
±30V
2135 pF @ 25 V
-
235W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PG-VSON-4
MOSFET N-CH 600V 33A 4VSON
Infineon Technologies
3,017
In Stock
1 : £3.71000
Cut Tape (CT)
3,000 : £1.23784
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
33A (Tc)
10V
105mOhm @ 10.5A, 10V
4V @ 530µA
45 nC @ 10 V
±20V
1952 pF @ 400 V
-
137W (Tc)
-40°C ~ 150°C (TJ)
-
-
Surface Mount
PG-VSON-4
4-PowerTSFN
PowerDI5060 UX
MOSFET BVDSS: 61V~100V POWERDI50
Diodes Incorporated
1,656
In Stock
1 : £0.78000
Cut Tape (CT)
2,500 : £0.19463
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
33A (Tc)
4.5V, 10V
32mOhm @ 5A, 10V
2.5V @ 250µA
11.9 nC @ 10 V
±20V
683 pF @ 50 V
-
3.4W (Ta), 68W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount, Wettable Flank
PowerDI5060-8 (Type UX)
8-PowerTDFN
PSMNR82-30YLEX
MOSFET N-CH 40V 33A LFPAK56
Nexperia USA Inc.
1,422
In Stock
1 : £0.81000
Cut Tape (CT)
1,500 : £0.21806
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
33A (Tc)
5V
17mOhm @ 10A, 10V
2.1V @ 1mA
7 nC @ 5 V
±10V
824 pF @ 25 V
-
45W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
BUK7M6R7-40HX
MOSFET N-CH 80V 33A LFPAK33
Nexperia USA Inc.
2,194
In Stock
1 : £0.99000
Cut Tape (CT)
1,500 : £0.27509
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
33A (Tc)
5V
25mOhm @ 10A, 10V
2.1V @ 1mA
16.7 nC @ 5 V
±10V
2275 pF @ 25 V
-
75W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
LFPAK33
SOT-1210, 8-LFPAK33 (5-Lead)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
MOSFET N-CH 150V 33A D2PAK
Infineon Technologies
3,461
In Stock
1 : £1.89000
Cut Tape (CT)
800 : £0.62471
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
33A (Tc)
10V
42mOhm @ 21A, 10V
5V @ 100µA
40 nC @ 10 V
±20V
1750 pF @ 50 V
-
144W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PG-VSON-4
MOSFET N-CH 600V 33A 4VSON
Infineon Technologies
4,344
In Stock
1 : £5.42000
Cut Tape (CT)
3,000 : £2.06202
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
33A (Tc)
10V
75mOhm @ 15.1A, 10V
4.5V @ 760µA
67 nC @ 10 V
±20V
2721 pF @ 400 V
-
189W (Tc)
-40°C ~ 150°C (TJ)
-
-
Surface Mount
PG-VSON-4
4-PowerTSFN
PG-TO263-3
MOSFET N-CH 650V 33A TO263-3
Infineon Technologies
2,220
In Stock
1 : £6.47000
Cut Tape (CT)
1,000 : £2.60628
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
650 V
33A (Tc)
10V
65mOhm @ 17.1A, 10V
4.5V @ 200µA
64 nC @ 10 V
±20V
3020 pF @ 400 V
-
171W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
D²PAK
MOSFET N-CH 650V 33A D2PAK
STMicroelectronics
2,000
In Stock
1 : £9.60000
Cut Tape (CT)
1,000 : £4.38293
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
650 V
33A (Tc)
10V
79mOhm @ 16.5A, 10V
5V @ 250µA
100 nC @ 10 V
±25V
4650 pF @ 100 V
-
190W (Tc)
150°C (TJ)
-
-
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-247-3L
SICFET N-CH 1200V 33A TO247-3
onsemi
2,352
In Stock
1 : £15.69000
Tube
-
Tube
Active
N-Channel
SiCFET (Cascode SiCJFET)
1200 V
33A (Tc)
12V
100mOhm @ 20A, 12V
6V @ 10mA
51 nC @ 15 V
±25V
1500 pF @ 100 V
-
254.2W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
PSMNR82-30YLEX
MOSFET N-CH 40V 33A LFPAK56
Nexperia USA Inc.
1,490
In Stock
1 : £0.79000
Cut Tape (CT)
1,500 : £0.21003
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
33A (Tc)
10V
21mOhm @ 10A, 10V
4V @ 1mA
10 nC @ 10 V
±20V
617 pF @ 25 V
-
45W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
8-PowerVDFN
PB-F POWER MOSFET TRANSISTOR DSO
Toshiba Semiconductor and Storage
6,860
In Stock
1 : £2.90000
Cut Tape (CT)
5,000 : £0.89198
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
200 V
33A (Tc)
10V
29mOhm @ 16.5A, 10V
4V @ 1mA
22 nC @ 10 V
±20V
2200 pF @ 100 V
-
800mW (Ta), 142W (Tc)
150°C
-
-
Surface Mount
8-DSOP Advance
8-PowerVDFN
10-PowerSOP Module
MOSFET N-CH 600V 33A HDSOP-10
Infineon Technologies
2,065
In Stock
1 : £4.17000
Cut Tape (CT)
1,700 : £1.46748
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
33A (Tc)
-
90mOhm @ 9.3A, 10V
4.5V @ 470µA
42 nC @ 10 V
±20V
1747 pF @ 400 V
-
227W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-HDSOP-10-1
10-PowerSOP Module
TO-247-3
NTHL099N60S5
onsemi
139
In Stock
1 : £4.71000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
33A (Tc)
10V
99mOhm @ 13.5A, 10V
4V @ 2.8mA
48 nC @ 10 V
±30V
2500 pF @ 400 V
-
184W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
PG-HSOF-8-2
MOSFET N-CH 600V 33A 8HSOF
Infineon Technologies
2,570
In Stock
1 : £5.25000
Cut Tape (CT)
2,000 : £1.97338
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
33A (Tc)
10V
75mOhm @ 11.4A, 10V
4.5V @ 570µA
51 nC @ 10 V
±20V
2103 pF @ 400 V
-
188W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-HSOF-8-2
8-PowerSFN
PG-TO263-7-12
SILICON CARBIDE MOSFET PG-TO263-
Infineon Technologies
959
In Stock
1 : £5.94000
Cut Tape (CT)
1,000 : £2.32961
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
SiCFET (Silicon Carbide)
650 V
33A (Tc)
18V
94mOhm @ 13.3A, 18V
5.7V @ 4mA
22 nC @ 18 V
+23V, -5V
744 pF @ 400 V
-
140W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
PG-TO247-3
MOSFET N-CH 650V 33A TO247-3
Infineon Technologies
203
In Stock
1 : £6.64000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
33A (Tc)
10V
65mOhm @ 17.1A, 10V
4V @ 850µA
64 nC @ 10 V
±20V
3020 pF @ 400 V
-
171W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO247-3
TO-247-3
TO-247-3L
SICFET N-CH 1200V 33A TO247-3
onsemi
11,394
In Stock
1 : £15.68000
Tube
-
Tube
Active
N-Channel
SiCFET (Cascode SiCJFET)
1200 V
33A (Tc)
12V
100mOhm @ 20A, 12V
6V @ 10mA
51 nC @ 15 V
±25V
1500 pF @ 100 V
-
254.2W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TO-247-4L
SICFET N-CH 1200V 33A TO247-4
onsemi
140
In Stock
1 : £15.69000
Tube
-
Tube
Active
N-Channel
SiCFET (Cascode SiCJFET)
1200 V
33A (Tc)
12V
100mOhm @ 20A, 12V
6V @ 10mA
43 nC @ 12 V
±25V
1500 pF @ 100 V
-
254.2W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
SOT-227B
MOSFET N-CH 900V 33A SOT227B
IXYS
541
In Stock
1 : £36.01000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
900 V
33A (Tc)
10V
210mOhm @ 20A, 10V
6.5V @ 1mA
230 nC @ 10 V
±30V
14000 pF @ 25 V
-
695W (Tc)
-55°C ~ 150°C (TJ)
-
-
Chassis Mount
SOT-227B
SOT-227-4, miniBLOC
Showing
of 144

Single FET, MOSFETs


Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

  • Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
  • Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

  1. High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
  2. Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
  3. High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.