32A (Tc) Single FETs, MOSFETs

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of 171

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
SQJ479EP-T1_GE3 MOSFET P-CH 80V 32A PPAK SO-8 Vishay Siliconix	350 In Stock	1 : £1.31000 Cut Tape (CT) 3,000 : £0.35659 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	80 V	32A (Tc)	4.5V, 10V	33mOhm @ 10A, 10V	2.5V @ 250µA	150 nC @ 10 V	±20V	4500 pF @ 25 V	-	68W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
SQJ469EP-T1_GE3 MOSFET P-CH 80V 32A PPAK SO-8 Vishay Siliconix	9,123 In Stock	1 : £2.89000 Cut Tape (CT) 3,000 : £0.96937 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	80 V	32A (Tc)	6V, 10V	25mOhm @ 10.2A, 10V	2.5V @ 250µA	155 nC @ 10 V	±20V	5100 pF @ 40 V	-	100W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
IXTX32P60P MOSFET P-CH 600V 32A PLUS247-3 IXYS	343 In Stock 1,110 Factory	1 : £16.65000 Tube	PolarP™	Tube	Active	P-Channel	MOSFET (Metal Oxide)	600 V	32A (Tc)	10V	350mOhm @ 16A, 10V	4V @ 1mA	196 nC @ 10 V	±20V	11100 pF @ 25 V	-	890W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PLUS247™-3	TO-247-3 Variant
SQJ479EP-T1_BE3 P-CHANNEL 80-V (D-S) 175C MOSFET Vishay Siliconix	5,588 In Stock	1 : £1.31000 Cut Tape (CT) 3,000 : £0.35659 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	80 V	32A (Tc)	4.5V, 10V	33mOhm @ 10A, 10V	2.5V @ 250µA	150 nC @ 10 V	±20V	4500 pF @ 25 V	-	68W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
IRFR3411TRPBF MOSFET N-CH 100V 32A DPAK Infineon Technologies	3,251 In Stock	1 : £1.37000 Cut Tape (CT) 2,000 : £0.37783 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	32A (Tc)	10V	44mOhm @ 16A, 10V	4V @ 250µA	71 nC @ 10 V	±20V	1960 pF @ 25 V	-	130W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-252AA (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
PSMN034-100BS,118 MOSFET N-CH 100V 32A D2PAK Nexperia USA Inc.	6,315 In Stock	1 : £1.51000 Cut Tape (CT) 800 : £0.48919 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	32A (Tc)	10V	34.5mOhm @ 15A, 10V	4V @ 1mA	23.8 nC @ 10 V	±20V	1201 pF @ 50 V	-	86W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SQJ402EP-T1_GE3 MOSFET N-CH 100V 32A PPAK SO-8 Vishay Siliconix	6,872 In Stock	1 : £1.71000 Cut Tape (CT) 3,000 : £0.48561 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	32A (Tc)	4.5V, 10V	11mOhm @ 10A, 10V	2.5V @ 250µA	51 nC @ 10 V	±20V	2289 pF @ 40 V	-	83W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
BSZ300N15NS5ATMA1 MOSFET N-CH 150V 32A TSDSON Infineon Technologies	3,823 In Stock	1 : £2.07000 Cut Tape (CT) 5,000 : £0.61604 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	150 V	32A (Tc)	8V, 10V	30mOhm @ 16A, 10V	4.6V @ 32µA	13 nC @ 10 V	±20V	950 pF @ 75 V	-	62.5W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TSDSON-8-FL	8-PowerTDFN
IXTP32P05T MOSFET P-CH 50V 32A TO220AB IXYS	4,516 In Stock	1 : £2.58000 Tube	TrenchP™	Tube	Active	P-Channel	MOSFET (Metal Oxide)	50 V	32A (Tc)	10V	39mOhm @ 500mA, 10V	4.5V @ 250µA	46 nC @ 10 V	±15V	1975 pF @ 25 V	-	83W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3	TO-220-3
IXTA32P05T MOSFET P-CH 50V 32A TO263 IXYS	951 In Stock 1,000 Factory	1 : £2.82000 Tube	TrenchP™	Tube	Active	P-Channel	MOSFET (Metal Oxide)	50 V	32A (Tc)	10V	39mOhm @ 500mA, 10V	4.5V @ 250µA	46 nC @ 10 V	±15V	1975 pF @ 25 V	-	83W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263AA	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SIHH080N60E-T1-GE3 E SERIES POWER MOSFET POWERPAK 8 Vishay Siliconix	578 In Stock	1 : £4.40000 Cut Tape (CT) 3,000 : £1.70776 Tape & Reel (TR)	E	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	32A (Tc)	10V	80mOhm @ 17A, 10V	5V @ 250µA	63 nC @ 10 V	±30V	2557 pF @ 100 V	-	184W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® 8 x 8	8-PowerTDFN
STW40N65M2 MOSFET N-CH 650V 32A TO247 STMicroelectronics	597 In Stock	1 : £4.79000 Tube	MDmesh™ M2	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	32A (Tc)	10V	99mOhm @ 16A, 10V	4V @ 250µA	56.5 nC @ 10 V	±25V	2355 pF @ 100 V	-	250W (Tc)	150°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3
SPW32N50C3FKSA1 MOSFET N-CH 560V 32A TO247-3 Infineon Technologies	524 In Stock	1 : £6.41000 Tube	CoolMOS™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	560 V	32A (Tc)	10V	110mOhm @ 20A, 10V	3.9V @ 1.8mA	170 nC @ 10 V	±20V	4200 pF @ 25 V	-	284W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-3-1	TO-247-3
IXTA32P20T MOSFET P-CH 200V 32A TO263 IXYS	1,076 In Stock	1 : £7.41000 Tube	TrenchP™	Tube	Active	P-Channel	MOSFET (Metal Oxide)	200 V	32A (Tc)	10V	130mOhm @ 16A, 10V	4V @ 250µA	185 nC @ 10 V	±15V	14500 pF @ 25 V	-	300W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263AA	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
AON7422G MOSFET N-CHANNEL 30V 32A 8DFN Alpha & Omega Semiconductor Inc.	2,445 In Stock	1 : £0.64000 Cut Tape (CT) 5,000 : £0.14358 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	32A (Tc)	4.5V, 10V	4.6mOhm @ 20A, 10V	2.4V @ 250µA	60 nC @ 10 V	±20V	2300 pF @ 15 V	-	28W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-DFN-EP (3x3)	8-PowerVDFN
PSMN013-30YLC,115 MOSFET N-CH 30V 32A LFPAK56 Nexperia USA Inc.	4,288 In Stock	1 : £0.66000 Cut Tape (CT) 1,500 : £0.17366 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	32A (Tc)	10V	13.6mOhm @ 10A, 10V	1.95V @ 1mA	8.3 nC @ 10 V	±20V	521 pF @ 15 V	-	26W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
SQJ464EP-T1_GE3 MOSFET N-CH 60V 32A PPAK SO-8 Vishay Siliconix	7,732 In Stock	1 : £1.14000 Cut Tape (CT) 3,000 : £0.30033 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	32A (Tc)	4.5V, 10V	17mOhm @ 7.1A, 10V	2.5V @ 250µA	44 nC @ 10 V	±20V	2086 pF @ 30 V	-	45W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
NTD6414ANT4G MOSFET N-CH 100V 32A DPAK onsemi	1,680 In Stock	1 : £1.19000 Cut Tape (CT) 2,500 : £0.32444 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	32A (Tc)	10V	37mOhm @ 32A, 10V	4V @ 250µA	40 nC @ 10 V	±20V	1450 pF @ 25 V	-	100W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
STL8N6LF6AG MOSFET N-CH 60V 32A POWERFLAT STMicroelectronics	2,429 In Stock	1 : £1.24000 Cut Tape (CT) 3,000 : £0.33362 Tape & Reel (TR)	STripFET™ F6	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	32A (Tc)	4.5V, 10V	27mOhm @ 9.6A, 10V	2.5V @ 250µA	27 nC @ 10 V	±20V	1340 pF @ 25 V	-	4.8W (Ta), 55W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PowerFlat™ (5x6)	8-PowerVDFN
SQJ460AEP-T1_GE3 MOSFET N-CH 60V 32A PPAK SO-8 Vishay Siliconix	1,332 In Stock	1 : £1.52000 Cut Tape (CT) 3,000 : £0.42504 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	32A (Tc)	4.5V, 10V	9.6mOhm @ 18A, 10V	2.5V @ 250µA	106 nC @ 10 V	±20V	4795 pF @ 25 V	-	83W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
SQ4182EY-T1_GE3 MOSFET N-CHANNEL 30V 32A 8SOIC Vishay Siliconix	7,032 In Stock	1 : £1.63000 Cut Tape (CT) 2,500 : £0.44081 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	32A (Tc)	4.5V, 10V	3.8mOhm @ 14A, 10V	2.5V @ 250µA	110 nC @ 10 V	±20V	5400 pF @ 15 V	-	7.1W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
SQ4182EY-T1_BE3 MOSFET N-CHANNEL 30V 32A 8SOIC Vishay Siliconix	5,311 In Stock	1 : £1.63000 Cut Tape (CT) 2,500 : £0.46680 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	32A (Tc)	4.5V, 10V	3.8mOhm @ 14A, 10V	2.5V @ 250µA	110 nC @ 10 V	±20V	5400 pF @ 15 V	-	7.1W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
SQJ402EP-T1_BE3 N-CHANNEL 100-V (D-S) 175C MOSFE Vishay Siliconix	6,054 In Stock	1 : £1.71000 Cut Tape (CT) 3,000 : £0.48561 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	32A (Tc)	4.5V, 10V	11mOhm @ 10.7A, 10V	2.5V @ 250µA	51 nC @ 10 V	±20V	2286 pF @ 25 V	-	83W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
SQJ456EP-T1_GE3 MOSFET N-CH 100V 32A PPAK SO-8 Vishay Siliconix	3,382 In Stock	1 : £4.45000 Cut Tape (CT) 3,000 : £1.73466 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	32A (Tc)	6V, 10V	26mOhm @ 9.3A, 10V	3.5V @ 250µA	63 nC @ 10 V	±20V	3342 pF @ 25 V	-	83W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
STW35N65DM2 MOSFET N-CH 650V 32A TO247 STMicroelectronics	449 In Stock	1 : £4.52000 Tube	MDmesh™ DM2	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	32A (Tc)	10V	110mOhm @ 16A, 10V	5V @ 250µA	56.3 nC @ 10 V	±25V	2540 pF @ 100 V	-	250W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.

Single FET, MOSFETs

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