3.7A (Ta) Single FETs, MOSFETs

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of 57

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
IRLML6402TRPBF MOSFET P-CH 20V 3.7A SOT23 Infineon Technologies	3,261 In Stock	1 : £0.31000 Cut Tape (CT) 3,000 : £0.06749 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Last Time Buy	P-Channel	MOSFET (Metal Oxide)	20 V	3.7A (Ta)	2.5V, 4.5V	65mOhm @ 3.7A, 4.5V	1.2V @ 250µA	12 nC @ 5 V	±12V	633 pF @ 10 V	-	1.3W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	Micro3™/SOT-23	TO-236-3, SC-59, SOT-23-3
NTR2101PT1G MOSFET P-CH 8V SOT23-3 onsemi	9,646 In Stock	1 : £0.39000 Cut Tape (CT) 3,000 : £0.08683 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	8 V	3.7A (Ta)	1.8V, 4.5V	52mOhm @ 3.5A, 4.5V	1V @ 250µA	15 nC @ 4.5 V	±8V	1173 pF @ 4 V	-	960mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
BSR802NL6327HTSA1 MOSFET N-CH 20V 3.7A SC59 Infineon Technologies	34,981 In Stock	1 : £0.57000 Cut Tape (CT) 3,000 : £0.12982 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	3.7A (Ta)	1.8V, 2.5V	23mOhm @ 3.7A, 2.5V	750mV @ 30µA	4.7 nC @ 2.5 V	±8V	1447 pF @ 10 V	-	500mW (Ta)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-SC59-3	TO-236-3, SC-59, SOT-23-3
FDT3612 MOSFET N-CH 100V 3.7A SOT223-4 onsemi	17,330 In Stock	1 : £0.82000 Cut Tape (CT) 4,000 : £0.19674 Tape & Reel (TR)	PowerTrench®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	3.7A (Ta)	6V, 10V	120mOhm @ 3.7A, 10V	4V @ 250µA	20 nC @ 10 V	±20V	632 pF @ 50 V	-	3W (Ta)	-55°C ~ 155°C (TJ)	-	-	Surface Mount	SOT-223-4	TO-261-4, TO-261AA
IRFL4105TRPBF MOSFET N-CH 55V 3.7A SOT223 Infineon Technologies	2,229 In Stock	1 : £0.82000 Cut Tape (CT) 2,500 : £0.20426 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Last Time Buy	N-Channel	MOSFET (Metal Oxide)	55 V	3.7A (Ta)	10V	45mOhm @ 3.7A, 10V	4V @ 250µA	35 nC @ 10 V	±20V	660 pF @ 25 V	-	1W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-223	TO-261-4, TO-261AA
NTF5P03T3G MOSFET P-CH 30V 3.7A SOT223 onsemi	4,327 In Stock	1 : £0.83000 Cut Tape (CT) 4,000 : £0.20172 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	3.7A (Ta)	4.5V, 10V	100mOhm @ 5.2A, 10V	3V @ 250µA	38 nC @ 10 V	±20V	950 pF @ 25 V	-	1.56W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-223 (TO-261)	TO-261-4, TO-261AA
ZXMN3A03E6TA MOSFET N-CH 30V 3.7A SOT-23-6 Diodes Incorporated	5,970 In Stock 15,000 Factory	1 : £0.94000 Cut Tape (CT) 3,000 : £0.23072 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	3.7A (Ta)	4.5V, 10V	50mOhm @ 7.8A, 10V	1V @ 250µA	12.6 nC @ 10 V	±20V	600 pF @ 25 V	-	1.1W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-6	SOT-23-6
ISP650P06NMXTSA1 MOSFET P-CH 60V 3.7A SOT223-4 Infineon Technologies	2,679 In Stock	1 : £1.34000 Cut Tape (CT) 1,000 : £0.41378 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	60 V	3.7A (Ta)	10V	65mOhm @ 3.7A, 10V	4V @ 1.037mA	39 nC @ 10 V	±20V	1600 pF @ 30 V	-	1.8W (Ta), 4.2W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-SOT223-4	TO-261-4, TO-261AA
IRF7820TRPBF MOSFET N CH 200V 3.7A 8-SO Infineon Technologies	4,759 In Stock	1 : £1.48000 Cut Tape (CT) 4,000 : £0.38858 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	200 V	3.7A (Ta)	10V	78mOhm @ 2.2A, 10V	5V @ 100µA	44 nC @ 10 V	±20V	1750 pF @ 100 V	-	2.5W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
PMN52XPX MOSFET P-CH 20V 3.7A 6TSOP Nexperia USA Inc.	3,238 In Stock	1 : £0.38000 Cut Tape (CT) 3,000 : £0.08042 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	3.7A (Ta)	1.5V, 4.5V	62mOhm @ 3.7A, 4.5V	900mV @ 250µA	12 nC @ 4.5 V	±12V	763 pF @ 10 V	-	530mW (Ta), 4.46W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	6-TSOP	SC-74, SOT-457
DMN6066SSS-13 MOSFET N-CH 60V 3.7A 8SO Diodes Incorporated	4,633 In Stock	1 : £0.90000 Cut Tape (CT) 2,500 : £0.22628 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	3.7A (Ta)	4.5V, 10V	66mOhm @ 4.5A, 10V	3V @ 250µA	10.3 nC @ 10 V	±20V	502 pF @ 30 V	-	1.56W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
ZXMN2A03E6TA MOSFET N-CH 20V 3.7A SOT23-6 Diodes Incorporated	3,041 In Stock 3,000 Factory	1 : £0.93209 Cut Tape (CT) 3,000 : £0.23072 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	3.7A (Ta)	2.5V, 4.5V	55mOhm @ 7.2A, 4.5V	700mV @ 250µA (Min)	8.2 nC @ 4.5 V	±12V	837 pF @ 10 V	-	1.1W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-6	SOT-23-6
NVF5P03T3G MOSFET P-CH 30V 3.7A SOT-223 onsemi	6,105 In Stock	1 : £0.99000 Cut Tape (CT) 4,000 : £0.24893 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	3.7A (Ta)	4.5V, 10V	100mOhm @ 5.2A, 10V	3V @ 250µA	38 nC @ 10 V	±20V	950 pF @ 25 V	-	1.56W (Ta)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	SOT-223 (TO-261)	TO-261-4, TO-261AA
NVGS4111PT1G MOSFET P-CH 30V 3.7A 6TSOP onsemi	2,902 In Stock	1 : £0.79928 Cut Tape (CT) 3,000 : £0.19869 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	3.7A (Ta)	4.5V, 10V	60mOhm @ 3.7A, 10V	3V @ 250µA	32 nC @ 10 V	±20V	750 pF @ 15 V	-	630mW (Ta)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
DMN6066SSSQ-13 MOSFET BVDSS: 41V~60V SO-8 T&R 2 Diodes Incorporated	2,460 In Stock 5,000 Factory	1 : £0.84000 Cut Tape (CT) 2,500 : £0.20765 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	3.7A (Ta)	4.5V, 10V	66mOhm @ 4.5A, 10V	3V @ 250µA	10.3 nC @ 10 V	±20V	502 pF @ 30 V	-	1.56W (Ta)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
BSR302NL6327HTSA1 MOSFET N-CH 30V 3.7A SC59 Infineon Technologies	0 In Stock 3,000 Marketplace	2,025 : £0.11131 Bulk	OptiMOS™	Tape & Reel (TR) Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	3.7A (Ta)	4.5V, 10V	23mOhm @ 3.7A, 10V	2V @ 30µA	6.6 nC @ 5 V	±20V	750 pF @ 15 V	-	500mW (Ta)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-SC59-3	TO-236-3, SC-59, SOT-23-3
NTLJS1102PTAG MOSFET P-CH 8V 3.7A 6WDFN onsemi	0 In Stock 36,000 Marketplace	3,000 : £0.16264 Tape & Reel (TR) 1,010 : £0.22263 Bulk	µCool™	Tape & Reel (TR) Bulk	Obsolete	P-Channel	MOSFET (Metal Oxide)	8 V	3.7A (Ta)	1.2V, 4.5V	36mOhm @ 6.2A, 4.5V	720mV @ 250µA	25 nC @ 4.5 V	±6V	1585 pF @ 4 V	-	700mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	6-WDFN (2x2)	6-WDFN Exposed Pad
SI2323DS MOSFET P-CH 20V 3.7A SOT23-3 UMW	5,951 In Stock	1 : £0.33000 Cut Tape (CT) 3,000 : £0.07021 Tape & Reel (TR)	*	Tape & Reel (TR) Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	20 V	3.7A (Ta)	1.8V, 4.5V	39mOhm @ 4.7A, 4.5V	1V @ 250µA	-	±8V	-	-	750mW (Ta)	-55°C ~ 155°C (TJ)	-	-	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
UMWIRLML6402 20V 3.7A 1.3W 65MR@4.5V,3.7A 950 UMW	5,092 In Stock	1 : £0.47000 Cut Tape (CT) 3,000 : £0.10868 Tape & Reel (TR)	UMW	Tape & Reel (TR) Cut Tape (CT)	Active	P-Channel	MOSFET (Metal Oxide)	20 V	3.7A (Ta)	2.5V, 4.5V	65mOhm @ 3.7A, 4.5V	950mV @ 250µA	12 nC @ 5 V	±12V	633 pF @ 10 V	-	1.3W (Ta)	150°C (TJ)	-	-	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
FDZ375P MOSFET P-CH 20V 3.7A 4WLCSP onsemi	0 In Stock 210,586 Marketplace	157 : £1.41739 Bulk	PowerTrench®	Tape & Reel (TR) Tape & Reel (TR) Bulk	Obsolete	P-Channel	MOSFET (Metal Oxide)	20 V	3.7A (Ta)	1.5V, 4.5V	78mOhm @ 2A, 4.5V	1.2V @ 250µA	15 nC @ 4.5 V	±8V	865 pF @ 10 V	-	1.7W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	4-WLCSP (1x1)	4-XFBGA, WLCSP
FDZ375P MOSFET P-CH 20V 3.7A 4WLCSP Fairchild Semiconductor	4,885 Marketplace	157 : £1.41739 Bulk	PowerTrench®	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	20 V	3.7A (Ta)	1.5V, 4.5V	78mOhm @ 2A, 4.5V	1.2V @ 250µA	15 nC @ 4.5 V	±8V	865 pF @ 10 V	-	1.7W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	4-WLCSP (1x1)	4-XFBGA, WLCSP
PMV40UN2R MOSFET N-CH 30V 3.7A TO236AB Nexperia USA Inc.	0 In Stock	1 : £0.30000 Cut Tape (CT) 3,000 : £0.06544 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	3.7A (Ta)	1.8V, 4.5V	44mOhm @ 3.7A, 4.5V	900mV @ 250µA	12 nC @ 4.5 V	±12V	635 pF @ 15 V	-	490mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-236AB	TO-236-3, SC-59, SOT-23-3
TK1K9A60F,S4X MOSFET N-CH 600V 3.7A TO220SIS Toshiba Semiconductor and Storage	0 In Stock Check Lead Time	1 : £1.19000 Tube	U-MOSIX	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	3.7A (Ta)	10V	1.9Ohm @ 1.9A, 10V	4V @ 400µA	14 nC @ 10 V	±30V	490 pF @ 300 V	-	30W (Tc)	150°C	-	-	Through Hole	TO-220SIS	TO-220-3 Full Pack
PMV50UPEVL MOSFET P-CH 20V 3.7A TO236AB Nexperia USA Inc.	0 In Stock	10,000 : £0.06345 Tape & Reel (TR)	-	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	20 V	3.7A (Ta)	1.8V, 4.5V	66mOhm @ 3.2A, 4.5V	900mV @ 250µA	15.7 nC @ 4.5 V	±8V	24 pF @ 10 V	-	500mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-236AB	TO-236-3, SC-59, SOT-23-3
DMP2109UVT-13 MOSFET P-CH 20V 3.7A TSOT26 Diodes Incorporated	0 In Stock Check Lead Time	10,000 : £0.06735 Tape & Reel (TR)	-	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	20 V	3.7A (Ta)	2.5V, 4.5V	80mOhm @ 2.8A, 4.5V	1V @ 250µA	6 nC @ 4.5 V	±10V	443 pF @ 10 V	-	1.2W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TSOT-26	SOT-23-6 Thin, TSOT-23-6

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.

Single FET, MOSFETs

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