3.6A (Tc) Single FETs, MOSFETs

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of 84

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
SI2300DS-T1-GE3 MOSFET N-CH 30V 3.6A SOT23-3 Vishay Siliconix	36,042 In Stock	1 : £0.49000 Cut Tape (CT) 3,000 : £0.11300 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	3.6A (Tc)	2.5V, 4.5V	68mOhm @ 2.9A, 4.5V	1.5V @ 250µA	10 nC @ 10 V	±12V	320 pF @ 15 V	-	1.1W (Ta), 1.7W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
IPN50R2K0CEATMA1 MOSFET N-CH 500V 3.6A SOT223 Infineon Technologies	8,054 In Stock	1 : £0.50000 Cut Tape (CT) 3,000 : £0.11349 Tape & Reel (TR)	CoolMOS™ CE	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	500 V	3.6A (Tc)	13V	2Ohm @ 600mA, 13V	3.5V @ 50µA	6 nC @ 10 V	±20V	124 pF @ 100 V	-	5W (Tc)	-40°C ~ 150°C (TJ)	-	-	Surface Mount	PG-SOT223-3	TO-261-4, TO-261AA
IRFR9220TRPBF MOSFET P-CH 200V 3.6A DPAK Vishay Siliconix	4,526 In Stock	1 : £2.24000 Cut Tape (CT) 2,000 : £0.70015 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	200 V	3.6A (Tc)	10V	1.5Ohm @ 2.2A, 10V	4V @ 250µA	20 nC @ 10 V	±20V	340 pF @ 25 V	-	2.5W (Ta), 42W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRFR9220PBF MOSFET P-CH 200V 3.6A DPAK Vishay Siliconix	3,056 In Stock	1 : £2.24000 Tube	-	Tube	Active	P-Channel	MOSFET (Metal Oxide)	200 V	3.6A (Tc)	10V	1.5Ohm @ 2.2A, 10V	4V @ 250µA	20 nC @ 10 V	±20V	340 pF @ 25 V	-	2.5W (Ta), 42W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRFBF30PBF MOSFET N-CH 900V 3.6A TO220AB Vishay Siliconix	518 In Stock	1 : £3.57000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	900 V	3.6A (Tc)	10V	3.7Ohm @ 2.2A, 10V	4V @ 250µA	78 nC @ 10 V	±20V	1200 pF @ 25 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
IPN60R1K5PFD7SATMA1 MOSFET N-CH 600V 3.6A SOT223 Infineon Technologies	1,430 In Stock	1 : £0.70906 Cut Tape (CT) 3,000 : £0.16763 Tape & Reel (TR)	CoolMOS™PFD7	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	3.6A (Tc)	10V	1.5Ohm @ 700mA, 10V	4.5V @ 40µA	4.6 nC @ 10 V	±20V	169 pF @ 400 V	-	6W (Tc)	-40°C ~ 150°C (TJ)	-	-	Surface Mount	PG-SOT223-3	TO-261-4, TO-261AA
SIHFR9220-GE3 MOSFET P-CHANNEL 200V Vishay Siliconix	2,230 In Stock	1 : £0.91000 Tube	-	Tube	Active	P-Channel	MOSFET (Metal Oxide)	200 V	3.6A (Tc)	10V	1.5Ohm @ 2.2A, 10V	4V @ 250µA	20 nC @ 10 V	±20V	340 pF @ 25 V	-	2.5W (Ta), 42W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
SIHFU9220-GE3 MOSFET P-CH 200V 3.6A TO251AA Vishay Siliconix	140 In Stock	1 : £1.08000 Tube	-	Tube	Active	P-Channel	MOSFET (Metal Oxide)	200 V	3.6A (Tc)	10V	1.5Ohm @ 2.2A, 10V	4V @ 250µA	20 nC @ 10 V	±20V	3400 pF @ 25 V	-	2.5W (Ta), 42W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-251AA	TO-251-3 Short Leads, IPAK, TO-251AA
TP65H480G4JSGB-TR GANFET N-CH 650V 3.6A QFN5X6 Renesas Electronics Corporation	3,853 In Stock	1 : £1.51000 Cut Tape (CT) 4,000 : £0.39888 Tape & Reel (TR)	SuperGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	3.6A (Tc)	6V	560mOhm @ 3A, 6V	2.8V @ 500µA	5 nC @ 10 V	±10V	414 pF @ 400 V	-	13.2W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-PQFN (5x6)	8-PowerTDFN
TP65H480G4JSG-TR GANFET N-CH 650V 3.6A 3PQFN Renesas Electronics Corporation	1,131 In Stock	1 : £1.51000 Cut Tape (CT) 4,000 : £0.40834 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Cascode Gallium Nitride FET)	650 V	3.6A (Tc)	8V	560mOhm @ 3.4A, 8V	2.8V @ 500µA	9 nC @ 8 V	±18V	760 pF @ 400 V	-	13.2W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	3-PQFN (5x6)	3-PowerTDFN
STL7N80K5 MOSFET N-CH 800V 3.6A POWERFLAT STMicroelectronics	5,686 In Stock	1 : £2.12000 Cut Tape (CT) 3,000 : £0.63672 Tape & Reel (TR)	SuperMESH5™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	800 V	3.6A (Tc)	10V	1.2Ohm @ 3A, 10V	5V @ 100µA	13.4 nC @ 10 V	±30V	360 pF @ 100 V	-	42W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerFlat™ (5x6)	8-PowerVDFN
IRFBC30APBF MOSFET N-CH 600V 3.6A TO220AB Vishay Siliconix	773 In Stock	1 : £2.78000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	3.6A (Tc)	10V	2.2Ohm @ 2.2A, 10V	4.5V @ 250µA	23 nC @ 10 V	±30V	510 pF @ 25 V	-	74W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
IRFBF30STRLPBF MOSFET N-CH 900V 3.6A TO263 Vishay Siliconix	1,389 In Stock	1 : £3.37000 Cut Tape (CT) 800 : £1.23859 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	900 V	3.6A (Tc)	10V	3.7Ohm @ 2.2A, 10V	4V @ 250µA	78 nC @ 10 V	±20V	1200 pF @ 25 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IRFR9220TRPBF-BE3 MOSFET P-CH 200V 3.6A DPAK Vishay Siliconix	3,131 In Stock	1 : £2.24000 Cut Tape (CT) 2,000 : £0.70015 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	200 V	3.6A (Tc)	10V	1.5Ohm @ 2.2A, 10V	4V @ 250µA	20 nC @ 10 V	±20V	340 pF @ 25 V	-	2.5W (Ta), 42W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRFR9220TRLPBF MOSFET P-CH 200V 3.6A DPAK Vishay Siliconix	2,383 In Stock	1 : £2.24000 Cut Tape (CT) 3,000 : £0.68644 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	200 V	3.6A (Tc)	10V	1.5Ohm @ 2.2A, 10V	4V @ 250µA	20 nC @ 10 V	±20V	340 pF @ 25 V	-	42W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRFBC30ASPBF MOSFET N-CH 600V 3.6A D2PAK Vishay Siliconix	1,769 In Stock	1 : £3.00000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	3.6A (Tc)	10V	2.2Ohm @ 2.2A, 10V	4.5V @ 250µA	23 nC @ 10 V	±30V	510 pF @ 25 V	-	74W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IRFR9220TRRPBF MOSFET P-CH 200V 3.6A DPAK Vishay Siliconix	2,980 In Stock	1 : £2.24000 Cut Tape (CT) 3,000 : £0.68644 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	200 V	3.6A (Tc)	10V	1.5Ohm @ 2.2A, 10V	4V @ 250µA	20 nC @ 10 V	±20V	340 pF @ 25 V	-	2.5W (Ta), 42W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRFR9220PBF-BE3 P-CHANNEL 200V Vishay Siliconix	2,920 In Stock	1 : £2.24000 Cut Tape (CT) 3,000 : £0.68644 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	200 V	3.6A (Tc)	10V	1.5Ohm @ 2.2A, 10V	4V @ 250µA	20 nC @ 10 V	±20V	340 pF @ 25 V	-	2.5W (Ta), 42W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRFBC30APBF-BE3 MOSFET N-CH 600V 3.6A TO220AB Vishay Siliconix	989 In Stock	1 : £2.78000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	3.6A (Tc)	10V	2.2Ohm @ 2.2A, 10V	4.5V @ 250µA	23 nC @ 10 V	±30V	510 pF @ 25 V	-	74W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
G2304 MOSFET N-CH 30V 3.6A SOT-23 Goford Semiconductor	8,850 In Stock	1 : £0.25000 Cut Tape (CT) 3,000 : £0.05283 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	30 V	3.6A (Tc)	4.5V, 10V	39mOhm @ 1.8A, 10V	2.2V @ 250µA	5 nC @ 10 V	±20V	294 pF @ 15 V	-	1.2W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
FQP4N25 MOSFET N-CH 250V 3.6A TO220-3 Fairchild Semiconductor	2,950 Marketplace	699 : £0.31910 Tube	QFET®	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	250 V	3.6A (Tc)	10V	1.75Ohm @ 1.8A, 10V	5V @ 250µA	5.6 nC @ 10 V	±30V	200 pF @ 25 V	-	52W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3	TO-220-3
FQP4N20 MOSFET N-CH 200V 3.6A TO220-3 Fairchild Semiconductor	10,753 Marketplace	606 : £0.37106 Tube	QFET®	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	200 V	3.6A (Tc)	10V	1.4Ohm @ 1.8A, 10V	5V @ 250µA	6.5 nC @ 10 V	±30V	220 pF @ 25 V	-	45W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3	TO-220-3
FQI4N20TU MOSFET N-CH 200V 3.6A I2PAK Fairchild Semiconductor	5,000 Marketplace	606 : £0.37106 Tube	QFET®	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	200 V	3.6A (Tc)	10V	1.4Ohm @ 1.8A, 10V	5V @ 250µA	6.5 nC @ 10 V	±30V	220 pF @ 25 V	-	3.13W (Ta), 45W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-262 (I2PAK)	TO-262-3 Long Leads, I2PAK, TO-262AA
SFW9510TM P-CHANNEL POWER MOSFET Fairchild Semiconductor	8,584 Marketplace	550 : £0.40816 Bulk	-	Bulk	Obsolete	P-Channel	MOSFET (Metal Oxide)	100 V	3.6A (Tc)	10V	1.2Ohm @ 1.8A, 10V	4V @ 250µA	10 nC @ 10 V	±30V	335 pF @ 25 V	-	3.8W (Ta), 32W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
FQP3N90 MOSFET N-CH 900V 3.6A TO220-3 Fairchild Semiconductor	22,834 Marketplace	319 : £0.69759 Tube	QFET®	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	900 V	3.6A (Tc)	10V	4.25Ohm @ 1.8A, 10V	5V @ 250µA	26 nC @ 10 V	±30V	910 pF @ 25 V	-	130W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3	TO-220-3

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.

Single FET, MOSFETs

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