3.1A (Tc) Single FETs, MOSFETs

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of 56

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
TSM2309CX RFG MOSFET P-CHANNEL 60V 3.1A SOT23 Taiwan Semiconductor Corporation	34,456 In Stock	1 : £0.47000 Cut Tape (CT) 3,000 : £0.10909 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	60 V	3.1A (Tc)	4.5V, 10V	190mOhm @ 3A, 10V	2.5V @ 250µA	8.2 nC @ 10 V	±20V	425 pF @ 30 V	-	1.56W (Tc)	150°C (TJ)	-	-	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
SI2301CDS-T1-GE3 MOSFET P-CH 20V 3.1A SOT23-3 Vishay Siliconix	144,572 In Stock	1 : £0.51014 Cut Tape (CT) 3,000 : £0.11812 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	3.1A (Tc)	2.5V, 4.5V	112mOhm @ 2.8A, 4.5V	1V @ 250µA	10 nC @ 4.5 V	±8V	405 pF @ 10 V	-	860mW (Ta), 1.6W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
SI2301CDS-T1-E3 MOSFET P-CH 20V 3.1A SOT23-3 Vishay Siliconix	42,150 In Stock	1 : £0.52916 Cut Tape (CT) 3,000 : £0.12319 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	3.1A (Tc)	2.5V, 4.5V	112mOhm @ 2.8A, 4.5V	1V @ 250µA	10 nC @ 4.5 V	±8V	405 pF @ 10 V	-	860mW (Ta), 1.6W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
SI2392ADS-T1-GE3 MOSFET N-CH 100V 3.1A SOT23-3 Vishay Siliconix	2,492 In Stock	1 : £0.59000 Cut Tape (CT) 3,000 : £0.14068 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	3.1A (Tc)	4.5V, 10V	126mOhm @ 2A, 10V	3V @ 250µA	10.4 nC @ 10 V	±20V	196 pF @ 50 V	-	1.25W (Ta), 2.5W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
IRFR9110PBF MOSFET P-CH 100V 3.1A DPAK Vishay Siliconix	3,861 In Stock	1 : £1.59000 Tube	-	Tube	Active	P-Channel	MOSFET (Metal Oxide)	100 V	3.1A (Tc)	10V	1.2Ohm @ 1.9A, 10V	4V @ 250µA	8.7 nC @ 10 V	±20V	200 pF @ 25 V	-	2.5W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRFR320TRPBF MOSFET N-CH 400V 3.1A DPAK Vishay Siliconix	1,325 In Stock	1 : £1.86017 Cut Tape (CT) 2,000 : £0.56121 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	400 V	3.1A (Tc)	10V	1.8Ohm @ 1.9A, 10V	4V @ 250µA	20 nC @ 10 V	±20V	350 pF @ 25 V	-	2.5W (Ta), 42W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRFR320PBF MOSFET N-CH 400V 3.1A DPAK Vishay Siliconix	1,672 In Stock	1 : £1.86000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	400 V	3.1A (Tc)	10V	1.8Ohm @ 1.9A, 10V	4V @ 250µA	20 nC @ 10 V	±20V	350 pF @ 25 V	-	2.5W (Ta), 42W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRFPG30PBF MOSFET N-CH 1000V 3.1A TO247-3 Vishay Siliconix	411 In Stock	1 : £4.27000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	3.1A (Tc)	10V	5Ohm @ 1.9A, 10V	4V @ 250µA	80 nC @ 10 V	±20V	980 pF @ 25 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AC	TO-247-3
IRFR9110TRPBF MOSFET P-CH 100V 3.1A DPAK Vishay Siliconix	2,532 In Stock	1 : £1.59000 Cut Tape (CT) 2,000 : £0.46477 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	100 V	3.1A (Tc)	10V	1.2Ohm @ 1.9A, 10V	4V @ 250µA	8.7 nC @ 10 V	±20V	200 pF @ 25 V	-	2.5W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRFU320PBF MOSFET N-CH 400V 3.1A TO251AA Vishay Siliconix	713 In Stock	1 : £1.78000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	400 V	3.1A (Tc)	10V	1.8Ohm @ 1.9A, 10V	4V @ 250µA	20 nC @ 10 V	±20V	350 pF @ 25 V	-	2.5W (Ta), 42W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-251AA	TO-251-3 Short Leads, IPAK, TO-251AA
SIHFR320-GE3 MOSFET N-CH 400V 3.1A DPAK Vishay Siliconix	1,855 In Stock	1 : £0.94000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	400 V	3.1A (Tc)	10V	1.8Ohm @ 1.9A, 10V	4V @ 250µA	20 nC @ 10 V	±20V	350 pF @ 25 V	-	2.5W (Ta), 42W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRFR9110TRLPBF MOSFET P-CH 100V 3.1A DPAK Vishay Siliconix	3,000 In Stock	1 : £1.59000 Cut Tape (CT) 3,000 : £0.44550 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	100 V	3.1A (Tc)	10V	1.2Ohm @ 1.9A, 10V	4V @ 250µA	8.7 nC @ 10 V	±20V	200 pF @ 25 V	-	2.5W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRFR320TRPBF-BE3 N-CHANNEL 400V Vishay Siliconix	1,918 In Stock	1 : £1.86000 Cut Tape (CT) 2,000 : £0.56121 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	400 V	3.1A (Tc)	10V	1.8Ohm @ 1.9A, 10V	4V @ 250µA	20 nC @ 10 V	±20V	350 pF @ 25 V	-	2.5W (Ta), 42W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
IPU50R1K4CEAKMA1 MOSFET N-CH 500V 3.1A TO251-3 Infineon Technologies	0 In Stock 428,622 Marketplace	1,397 : £0.15584 Bulk	CoolMOS™ CE	Bulk Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	500 V	3.1A (Tc)	13V	1.4Ohm @ 900mA, 13V	3.5V @ 70µA	8.2 nC @ 10 V	±20V	178 pF @ 100 V	-	42W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO251-3	TO-251-3 Short Leads, IPAK, TO-251AA
NDF03N60ZH MOSFET N-CH 600V 3.1A TO220FP onsemi	0 In Stock 78,600 Marketplace	757 : £0.29684 Tube	-	Tube Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	600 V	3.1A (Tc)	10V	3.6Ohm @ 1.2A, 10V	4.5V @ 50µA	18 nC @ 10 V	±30V	372 pF @ 25 V	-	27W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-2 Full Pack	TO-220-3 Full Pack
IRFR9110TF 100V P-CHANNEL MOSFET Fairchild Semiconductor	4,469 Marketplace	649 : £0.34137 Bulk	-	Bulk	Obsolete	P-Channel	MOSFET (Metal Oxide)	100 V	3.1A (Tc)	10V	1.2Ohm @ 1.9A, 10V	4V @ 250µA	8.7 nC @ 10 V	±20V	290 pF @ 25 V	-	25W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
NDF03N60ZG MOSFET N-CH 600V 3.1A TO220FP onsemi	0 In Stock 4,072 Marketplace	649 : £0.34137 Tube	-	Tube Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	600 V	3.1A (Tc)	10V	3.6Ohm @ 1.2A, 10V	4.5V @ 50µA	18 nC @ 10 V	±30V	372 pF @ 25 V	-	27W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220FP	TO-220-3 Full Pack
IRFU9110 3.1A 100V 1.200 OHM P-CHANNEL Harris Corporation	2,564 Marketplace	568 : £0.39331 Bulk	-	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	100 V	3.1A (Tc)	10V	1.2Ohm @ 1.9A, 10V	4V @ 250µA	8.7 nC @ 10 V	±20V	200 pF @ 25 V	-	2.5W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-251AA	TO-251-3 Short Leads, IPAK, TO-251AA
SFU9220TU P-CHANNEL POWER MOSFET Fairchild Semiconductor	29,376 Marketplace	519 : £0.43042 Bulk	-	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	200 V	3.1A (Tc)	10V	1.5Ohm @ 1.6A, 10V	4V @ 250µA	19 nC @ 10 V	±30V	540 pF @ 25 V	-	2.5W (Ta), 30W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	IPAK	TO-251-3 Short Leads, IPAK, TO-251AA
SIHFR320TR-GE3 MOSFET N-CHANNEL 400V Vishay Siliconix	462 In Stock	1 : £0.94000 Cut Tape (CT) 2,000 : £0.23693 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	400 V	3.1A (Tc)	10V	1.8Ohm @ 1.9A, 10V	4V @ 250µA	20 nC @ 10 V	±20V	350 pF @ 25 V	-	2.5W (Ta), 42W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
SIHFR320TRL-GE3 MOSFET N-CHANNEL 400V Vishay Siliconix	2,784 In Stock	1 : £1.00000 Cut Tape (CT) 3,000 : £0.25999 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	400 V	3.1A (Tc)	10V	1.8Ohm @ 1.9A, 10V	4V @ 250µA	20 nC @ 10 V	±20V	350 pF @ 25 V	-	2.5W (Ta), 42W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRFI830GPBF MOSFET N-CH 500V 3.1A TO220-3 Vishay Siliconix	145 In Stock	1 : £1.88000 Tube	-	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	500 V	3.1A (Tc)	10V	1.5Ohm @ 1.9A, 10V	4V @ 250µA	38 nC @ 10 V	±20V	610 pF @ 25 V	-	35W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
IPU60R1K5CEAKMA2 MOSFET N-CH 600V 3.1A TO251-3 Infineon Technologies	919 In Stock	1 : £0.65000 Tube	CoolMOS™ CE	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	3.1A (Tc)	10V	1.5Ohm @ 1.1A, 10V	3.5V @ 90µA	9.4 nC @ 10 V	±20V	200 pF @ 100 V	-	49W (Tc)	-40°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO251-3	TO-251-3 Short Leads, IPAK, TO-251AA
IPD50R1K4CEAUMA1 MOSFET N-CH 500V 3.1A TO252-3 Infineon Technologies	950 In Stock	1 : £0.60000 Cut Tape (CT) 2,500 : £0.16735 Tape & Reel (TR)	CoolMOS™ CE	Tape & Reel (TR) Cut Tape (CT)	Obsolete	N-Channel	MOSFET (Metal Oxide)	500 V	3.1A (Tc)	13V	1.4Ohm @ 900mA, 13V	3.5V @ 70µA	8.2 nC @ 10 V	±20V	178 pF @ 100 V	-	42W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TO252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63
IRFR9110 MOSFET P-CH 100V 3.1A DPAK Harris Corporation	554 Marketplace	313 : £0.71243 Bulk	-	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	100 V	3.1A (Tc)	-	1.2Ohm @ 1.9A, 10V	4V @ 250µA	8.7 nC @ 10 V	±20V	200 pF @ 25 V	-	2.5W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252AA (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.

Single FET, MOSFETs

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