280A (Tc) Single FETs, MOSFETs

Showing

of 12

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
PSMN1R0-40YLDX MOSFET N-CH 40V 280A LFPAK56 Nexperia USA Inc.	3,871 In Stock	1 : £2.97000 Cut Tape (CT) 1,500 : £0.99047 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	40 V	280A (Tc)	4.5V, 10V	1.1mOhm @ 25A, 10V	2.2V @ 1mA	127 nC @ 10 V	±20V	8845 pF @ 20 V	-	198W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
SQJQ131EL-T1_GE3 AUTOMOTIVE P-CHANNEL 30 V (D-S) Vishay Siliconix	1,229 In Stock	1 : £3.43000 Cut Tape (CT) 2,000 : £1.19331 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	280A (Tc)	4.5V, 10V	1.4mOhm @ 10A, 10V	2.5V @ 250µA	731 nC @ 10 V	±20V	33050 pF @ 15 V	-	600W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PowerPAK® 8 x 8	PowerPAK® 8 x 8
DI280N10TL MOSFET TOLL N 100V 0.002OHM 175C Diotec Semiconductor	1,892 In Stock	1 : £3.27000 Cut Tape (CT) 2,000 : £1.11680 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	280A (Tc)	10V	2mOhm @ 50A, 10V	4.2V @ 250µA	122 nC @ 10 V	±20V	8150 pF @ 50 V	-	425mW (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TOLL	8-PowerSFN
GSFPR8504 MOSFET, N-CH, SINGLE, 280.00A, 4 Good-Ark Semiconductor	9,995 In Stock	1 : £1.60000 Cut Tape (CT) 5,000 : £0.55860 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	40 V	280A (Tc)	4.5V, 10V	0.85mOhm @ 50A, 10V	2.9V @ 250µA	121 nC @ 10 V	±20V	9040 pF @ 15 V	-	139W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-PPAK (5.1x5.86)	8-PowerTDFN
PSMN1R0-40ULDX MOSFET N-CH 40V 280A LFPAK56 Nexperia USA Inc.	0 In Stock Check Lead Time	1,500 : £0.58023 Tape & Reel (TR)	-	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	40 V	280A (Tc)	-	-	-	127 nC @ 10 V	±20V	-	-	164W (Tc)	150°C (TJ)	-	-	Surface Mount	LFPAK56, Power-SO8	SOT-1023, 4-LFPAK
PSMN1R0-40YLD/2X PSMN1R0-40YLD/SOT1023/4 LEADS Nexperia USA Inc.	0 In Stock Check Lead Time	1,500 : £0.70813 Tape & Reel (TR)	-	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	40 V	280A (Tc)	4.5V, 10V	1.1mOhm @ 25A, 10V	2.2V @ 1mA	127 nC @ 10 V	±20V	8845 pF @ 20 V	-	198W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	LFPAK56, Power-SO8	SOT-1023, 4-LFPAK
MCACL280N03Y-TP MOSFET N-CH 30 280A DFN5060 Micro Commercial Co	0 In Stock Check Lead Time	5,000 : £0.81795 Tape & Reel (TR)	-	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	30 V	280A (Tc)	4.5V, 10V	0.7mOhm @ 75A, 10V	2.5V @ 250µA	135 nC @ 10 V	±20V	5877 pF @ 25 V	-	150W (Tj)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	DFN5060	8-PowerTDFN
IXFN280N07 MOSFET N-CH 70V 280A SOT-227B IXYS	0 In Stock	10 : £14.12100 Tube	HiPerFET™	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	70 V	280A (Tc)	10V	5mOhm @ 120A, 10V	4V @ 8mA	420 nC @ 10 V	±20V	9400 pF @ 25 V	-	600W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXUN280N10 MOSFET N-CH 100V 280A SOT-227B IXYS	0 In Stock	25 : £16.07960 Tube	-	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	280A (Tc)	10V	5mOhm @ 140A, 10V	4V @ 4mA	440 nC @ 10 V	±20V	18000 pF @ 25 V	-	770W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFN280N085 MOSFET N-CH 85V 280A SOT-227B IXYS	0 In Stock	300 : £18.26423 Tube	HiPerFET™	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	85 V	280A (Tc)	10V	4.4mOhm @ 100A, 10V	4V @ 8mA	580 nC @ 10 V	±20V	19000 pF @ 25 V	-	700W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXTH280N055T MOSFET N-CH 55V 280A TO247 IXYS	0 In Stock	Obsolete	TrenchMV™	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	55 V	280A (Tc)	10V	3.2mOhm @ 50A, 10V	4V @ 250µA	200 nC @ 10 V	±20V	9700 pF @ 25 V	-	550W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247 (IXTH)	TO-247-3
IXTQ280N055T MOSFET N-CH 55V 280A TO3P IXYS	0 In Stock	Obsolete	TrenchMV™	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	55 V	280A (Tc)	10V	3.2mOhm @ 50A, 10V	4V @ 250µA	200 nC @ 10 V	±20V	9700 pF @ 25 V	-	550W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-3P	TO-3P-3, SC-65-3

Showing

of 12

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.