Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
IMW65R027M1HXKSA1 MOSFET 650V NCH SIC TRENCH Infineon Technologies	1,016 In Stock	1 : £9.30000 Tube	CoolSIC™ M1	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	47A (Tc)	18V	34mOhm @ 38.3A, 18V	5.7V @ 11mA	62 nC @ 18 V	+23V, -5V	2131 pF @ 400 V	-	189W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-3-41	TO-247-3
IMZA65R107M1HXKSA1 MOSFET 650V NCH SIC TRENCH Infineon Technologies	102 In Stock	1 : £4.70000 Tube	CoolSIC™ M1	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	20A (Tc)	18V	142mOhm @ 8.9A, 18V	5.7V @ 3mA	15 nC @ 18 V	+23V, -5V	496 pF @ 400 V	-	75W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-3-41	TO-247-3
IMBG65R260M1HXTMA1 SILICON CARBIDE MOSFET PG-TO263- Infineon Technologies	907 In Stock	1 : £3.14000 Cut Tape (CT) 1,000 : £1.09136 Tape & Reel (TR)	CoolSIC™ M1	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	6A (Tc)	18V	346mOhm @ 3.6A, 18V	5.7V @ 1.1mA	6 nC @ 18 V	+23V, -5V	201 pF @ 400 V	-	65W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-7-12	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IMBG65R163M1HXTMA1 SILICON CARBIDE MOSFET PG-TO263- Infineon Technologies	503 In Stock	1 : £3.64000 Cut Tape (CT) 1,000 : £1.32933 Tape & Reel (TR)	CoolSIC™ M1	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	17A (Tc)	18V	217mOhm @ 5.7A, 18V	5.7V @ 1.7mA	10 nC @ 18 V	+23V, -5V	320 pF @ 400 V	-	85W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-7-12	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IMBG65R107M1HXTMA1 SILICON CARBIDE MOSFET PG-TO263- Infineon Technologies	794 In Stock	1 : £4.54000 Cut Tape (CT) 1,000 : £1.78827 Tape & Reel (TR)	CoolSIC™ M1	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	24A (Tc)	18V	141mOhm @ 8.9A, 18V	5.7V @ 2.6mA	15 nC @ 18 V	+23V, -5V	496 pF @ 400 V	-	110W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-7-12	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IMBG65R072M1HXTMA1 SILICON CARBIDE MOSFET PG-TO263- Infineon Technologies	969 In Stock	1 : £5.27000 Cut Tape (CT) 1,000 : £2.18345 Tape & Reel (TR)	CoolSIC™ M1	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	33A (Tc)	18V	94mOhm @ 13.3A, 18V	5.7V @ 4mA	22 nC @ 18 V	+23V, -5V	744 pF @ 400 V	-	140W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-7-12	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IMW65R072M1HXKSA1 MOSFET 650V NCH SIC TRENCH Infineon Technologies	220 In Stock	1 : £5.27000 Tube	CoolSIC™ M1	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	26A (Tc)	18V	94mOhm @ 13.3A, 18V	5.7V @ 4mA	22 nC @ 18 V	+23V, -5V	744 pF @ 400 V	-	96W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-3-41	TO-247-3
IMW65R048M1HXKSA1 MOSFET 650V NCH SIC TRENCH Infineon Technologies	0 In Stock Check Lead Time	1 : £6.53000 Tube	CoolSIC™ M1	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	39A (Tc)	18V	64mOhm @ 20.1A, 18V	5.7V @ 6mA	33 nC @ 18 V	+23V, -5V	1118 pF @ 400 V	-	125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-3-41	TO-247-3
IMBG65R083M1HXTMA1 SILICON CARBIDE MOSFET PG-TO263- Infineon Technologies	0 In Stock Check Lead Time	1 : £4.91000 Cut Tape (CT) 1,000 : £1.98686 Tape & Reel (TR)	CoolSIC™ M1	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	28A (Tc)	18V	111mOhm @ 11.2A, 18V	5.7V @ 3.3mA	19 nC @ 18 V	+23V, -5V	624 pF @ 400 V	-	126W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-7-12	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.