Single FETs, MOSFETs

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
IPW65R099CFD7AXKSA1
IMW65R048M1HXKSA1
MOSFET 650V NCH SIC TRENCH
Infineon Technologies
444
In Stock
1 : £7.19000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
39A (Tc)
18V
64mOhm @ 20.1A, 18V
5.7V @ 6mA
33 nC @ 18 V
+23V, -5V
1118 pF @ 400 V
-
125W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO247-3-41
TO-247-3
PG-TO263-7-12
IMBG65R260M1HXTMA1
SILICON CARBIDE MOSFET PG-TO263-
Infineon Technologies
980
In Stock
1 : £3.65000
Cut Tape (CT)
1,000 : £1.35586
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
6A (Tc)
18V
346mOhm @ 3.6A, 18V
5.7V @ 1.1mA
6 nC @ 18 V
+23V, -5V
201 pF @ 400 V
-
65W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
PG-TO263-7-12
IMBG65R163M1HXTMA1
SILICON CARBIDE MOSFET PG-TO263-
Infineon Technologies
663
In Stock
1 : £4.23000
Cut Tape (CT)
1,000 : £1.64803
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
17A (Tc)
18V
217mOhm @ 5.7A, 18V
5.7V @ 1.7mA
10 nC @ 18 V
+23V, -5V
320 pF @ 400 V
-
85W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
PG-TO263-7-12
IMBG65R107M1HXTMA1
SILICON CARBIDE MOSFET PG-TO263-
Infineon Technologies
810
In Stock
1 : £5.27000
Cut Tape (CT)
1,000 : £2.21685
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
24A (Tc)
18V
141mOhm @ 8.9A, 18V
5.7V @ 2.6mA
15 nC @ 18 V
+23V, -5V
496 pF @ 400 V
-
110W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IPW65R099CFD7AXKSA1
IMZA65R107M1HXKSA1
MOSFET 650V NCH SIC TRENCH
Infineon Technologies
235
In Stock
1 : £5.64000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
20A (Tc)
18V
142mOhm @ 8.9A, 18V
5.7V @ 3mA
15 nC @ 18 V
+23V, -5V
496 pF @ 400 V
-
75W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO247-3-41
TO-247-3
IPW65R099CFD7AXKSA1
IMW65R072M1HXKSA1
MOSFET 650V NCH SIC TRENCH
Infineon Technologies
230
In Stock
1 : £6.39000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
26A (Tc)
18V
94mOhm @ 13.3A, 18V
5.7V @ 4mA
22 nC @ 18 V
+23V, -5V
744 pF @ 400 V
-
96W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO247-3-41
TO-247-3
IPW65R099CFD7AXKSA1
IMW65R027M1HXKSA1
MOSFET 650V NCH SIC TRENCH
Infineon Technologies
29
In Stock
1 : £12.29000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
47A (Tc)
18V
34mOhm @ 38.3A, 18V
5.7V @ 11mA
62 nC @ 18 V
+23V, -5V
2131 pF @ 400 V
-
189W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO247-3-41
TO-247-3
PG-TO263-7-12
IMBG65R083M1HXTMA1
SILICON CARBIDE MOSFET PG-TO263-
Infineon Technologies
0
In Stock
Check Lead Time
1 : £5.73000
Cut Tape (CT)
1,000 : £2.47397
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
28A (Tc)
18V
111mOhm @ 11.2A, 18V
5.7V @ 3.3mA
19 nC @ 18 V
+23V, -5V
624 pF @ 400 V
-
126W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
PG-TO263-7-12
IMBG65R072M1HXTMA1
SILICON CARBIDE MOSFET PG-TO263-
Infineon Technologies
0
In Stock
Check Lead Time
1 : £6.13000
Cut Tape (CT)
1,000 : £2.70808
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
33A (Tc)
18V
94mOhm @ 13.3A, 18V
5.7V @ 4mA
22 nC @ 18 V
+23V, -5V
744 pF @ 400 V
-
140W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-7-12
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Showing
of 9

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.