Single FETs, MOSFETs

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
PG-TO252-3
MOSFET N-CH 650V 11A TO252-3
Infineon Technologies
4,844
In Stock
1 : £2.16000
Cut Tape (CT)
2,500 : £0.64570
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
650 V
11A (Tc)
10V
225mOhm @ 4.8A, 10V
4V @ 240µA
20 nC @ 10 V
±20V
996 pF @ 400 V
-
63W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TO252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
PG-TO220-FP
MOSFET N-CH 600V 11A TO220
Infineon Technologies
1,461
In Stock
1 : £3.31000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
11A (Tc)
10V
120mOhm @ 7.8A, 10V
4V @ 390µA
34 nC @ 10 V
±20V
1500 pF @ 400 V
-
32W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO220-FP
TO-220-3 Full Pack
PG-TO263-3
MOSFET N-CH 650V 46A TO263-3
Infineon Technologies
5,859
In Stock
1 : £7.53000
Cut Tape (CT)
1,000 : £3.44126
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
650 V
46A (Tc)
10V
45mOhm @ 24.9A, 10V
4V @ 1.25mA
93 nC @ 10 V
±20V
4340 pF @ 400 V
-
227W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
AIMZA75R016M1HXKSA1
MOSFET N-CH 600V 109A TO247-4
Infineon Technologies
238
In Stock
1 : £14.15000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
109A (Tc)
10V
17mOhm @ 58.2A, 10V
4V @ 2.91mA
240 nC @ 10 V
±20V
9890 pF @ 400 V
-
446W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO247-4
TO-247-4
PG-TO247-3
MOSFET N-CH 650V 75A TO247-3
Infineon Technologies
2,315
In Stock
1 : £14.35000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
75A (Tc)
10V
19mOhm @ 58.3A, 10V
4V @ 2.92mA
215 nC @ 10 V
±20V
9900 pF @ 400 V
-
446W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO247-3
TO-247-3
PG-VSON-4
MOSFET N-CH 650V 10A 4VSON
Infineon Technologies
7,254
In Stock
1 : £2.32000
Cut Tape (CT)
3,000 : £0.70966
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
650 V
10A (Tc)
10V
230mOhm @ 2.4A, 10V
4V @ 240µA
20 nC @ 10 V
±20V
996 pF @ 400 V
-
67W (Tc)
-40°C ~ 150°C (TJ)
-
-
Surface Mount
PG-VSON-4
4-PowerTSFN
PG-TO252-3
MOSFET N-CH 650V 13A TO252-3
Infineon Technologies
1,749
In Stock
1 : £2.45000
Cut Tape (CT)
2,500 : £0.76279
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
650 V
13A (Tc)
10V
190mOhm @ 5.7A, 10V
4V @ 290µA
23 nC @ 10 V
±20V
1150 pF @ 400 V
-
72W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TO252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
PG-TO263-3
MOSFET N-CH 650V 13A TO263-3
Infineon Technologies
3,293
In Stock
1 : £2.52000
Cut Tape (CT)
1,000 : £0.83265
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
650 V
13A (Tc)
10V
190mOhm @ 5.7A, 10V
4V @ 290µA
23 nC @ 10 V
±20V
1150 pF @ 400 V
-
72W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PG-VSON-4
MOSFET N-CH 650V 21A 4VSON
Infineon Technologies
8,356
In Stock
1 : £4.46000
Cut Tape (CT)
3,000 : £1.71837
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
650 V
21A (Tc)
10V
99mOhm @ 5.9A, 10V
4V @ 590µA
45 nC @ 10 V
±20V
2140 pF @ 400 V
-
128W (Tc)
-40°C ~ 150°C (TJ)
-
-
Surface Mount
PG-VSON-4
4-PowerTSFN
PG-TO220-3-1
MOSFET N-CH 600V 35A TO220-3
Infineon Technologies
496
In Stock
1 : £5.29000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
35A (Tc)
10V
60mOhm @ 15.9A, 10V
4V @ 800µA
68 nC @ 10 V
±20V
2850 pF @ 400 V
-
162W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO220-3
TO-220-3
PG-TO247-3
MOSFET N-CH 600V 35A TO247-3
Infineon Technologies
408
In Stock
1 : £5.41000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
35A (Tc)
10V
60mOhm @ 15.9A, 10V
4V @ 800µA
68 nC @ 10 V
±20V
2850 pF @ 400 V
-
162W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO247-3
TO-247-3
D²Pak
MOSFET N-CH 600V 35A TO263-3
Infineon Technologies
1,056
In Stock
1 : £5.45000
Cut Tape (CT)
1,000 : £2.24580
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
35A (Tc)
10V
60mOhm @ 15.9A, 10V
4V @ 800µA
68 nC @ 10 V
±20V
2850 pF @ 400 V
-
162W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
D2PAK (TO-263)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PG-TO220-3-1
MOSFET N-CH 650V 33A TO220-3
Infineon Technologies
500
In Stock
1 : £5.53000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
33A (Tc)
10V
65mOhm @ 17.1A, 10V
4V @ 850µA
64 nC @ 10 V
±20V
3020 pF @ 400 V
-
171W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO220-3
TO-220-3
4,588
In Stock
1 : £5.71000
Cut Tape (CT)
3,000 : £2.38812
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
29A (Tc)
10V
65mOhm @ 15.9A, 10V
4V @ 800µA
68 nC @ 10 V
±20V
2850 pF @ 400 V
-
180W (Tc)
-40°C ~ 150°C (TJ)
-
-
Surface Mount
PG-VSON-4-1
4-PowerTSFN
PG-TO263-3
MOSFET N-CH 650V 33A TO263-3
Infineon Technologies
2,529
In Stock
1 : £5.71000
Cut Tape (CT)
1,000 : £2.38745
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
650 V
33A (Tc)
10V
65mOhm @ 17.1A, 10V
4.5V @ 200µA
64 nC @ 10 V
±20V
3020 pF @ 400 V
-
171W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PG-VSON-4
MOSFET N-CH 650V 28A 4VSON
Infineon Technologies
5,304
In Stock
1 : £5.98000
Cut Tape (CT)
3,000 : £2.53909
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
650 V
28A (Tc)
10V
70mOhm @ 8.5A, 10V
4V @ 850µA
64 nC @ 10 V
±20V
3020 pF @ 100 V
-
169W (Tc)
-40°C ~ 150°C (TJ)
-
-
Surface Mount
PG-VSON-4
4-PowerTSFN
IHW15N120R3FKSA1
MOSFET N-CH 650V 46A TO247-3
Infineon Technologies
2,080
In Stock
1 : £7.40000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
46A (Tc)
10V
45mOhm @ 24.9A, 10V
4V @ 1.25mA
93 nC @ 10 V
±20V
4340 pF @ 400 V
-
227W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO247-3-1
TO-247-3
PG-TO220-3-1
MOSFET N-CH 600V 50A TO220-3
Infineon Technologies
453
In Stock
1 : £7.67000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
50A (Tc)
10V
40mOhm @ 24.9A, 10V
4V @ 1.24mA
107 nC @ 10 V
±20V
4340 pF @ 400 V
-
227W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO220-3-1
TO-220-3
PG-TO247-3
MOSFET N-CH 600V 50A TO247-3
Infineon Technologies
2,054
In Stock
1 : £8.08000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
50A (Tc)
10V
40mOhm @ 24.9A, 10V
4V @ 1.24mA
107 nC @ 10 V
±20V
4340 pF @ 400 V
-
227W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO247-3
TO-247-3
TO-247-4
MOSFET N-CH 650V 46A TO247
Infineon Technologies
419
In Stock
1 : £8.84000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
46A (Tc)
10V
45mOhm @ 24.9A, 10V
4V @ 1.25mA
93 nC @ 10 V
±20V
4340 pF @ 400 V
-
227W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO247
TO-247-4
PG-TO-220-FP
MOSFET N-CH 600V 9A TO220-FP
Infineon Technologies
149
In Stock
1 : £2.34000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
9A (Tc)
10V
180mOhm @ 5.3A, 10V
4V @ 260µA
24 nC @ 10 V
±20V
1080 pF @ 400 V
-
29W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO220 Full Pack
TO-220-3 Full Pack
PG-VSON-4
MOSFET N-CH 650V 12A 4VSON
Infineon Technologies
145
In Stock
1 : £2.69000
Cut Tape (CT)
3,000 : £0.87012
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
650 V
12A (Tc)
10V
195mOhm @ 2.9A, 10V
4V @ 290µA
23 nC @ 10 V
±20V
1150 pF @ 400 V
-
75W (Tc)
-40°C ~ 150°C (TJ)
-
-
Surface Mount
PG-VSON-4
4-PowerTSFN
PG-TO220-FP
MOSFET N-CH 650V 12A TO220-FP
Infineon Technologies
298
In Stock
1 : £4.18000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
12A (Tc)
10V
95mOhm @ 11.8A, 10V
4V @ 590µA
45 nC @ 10 V
±20V
2140 pF @ 400 V
-
34W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO220-FP
TO-220-3 Full Pack
PG-TO247-3
MOSFET N-CH 600V 14A TO247-3
Infineon Technologies
230
In Stock
1 : £4.27000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
14A (Tc)
10V
99mOhm @ 9.7A, 10V
4V @ 490µA
42 nC @ 10 V
±20V
1819 pF @ 400 V
-
110W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO247-3
TO-247-3
PG-TO263-3
MOSFET N-CH 650V 24A TO263-3
Infineon Technologies
2,226
In Stock
1 : £4.31000
Cut Tape (CT)
1,000 : £1.64260
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
650 V
24A (Tc)
10V
95mOhm @ 11.8A, 10V
4V @ 590µA
45 nC @ 10 V
±20V
2140 pF @ 400 V
-
128W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Showing
of 71

Single FET, MOSFETs


Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

  • Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
  • Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

  1. High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
  2. Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
  3. High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.