Single FETs, MOSFETs

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Drain to Source Voltage (Vdss)
600 V800 V
Current - Continuous Drain (Id) @ 25°C
20.7A (Tc)54.9A (Tc)
Rds On (Max) @ Id, Vgs
85mOhm @ 32.6A, 10V190mOhm @ 13.1A, 10V
Vgs(th) (Max) @ Id
3.9V @ 1mA3.9V @ 3.3mA
Gate Charge (Qg) (Max) @ Vgs
114 nC @ 10 V288 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2400 pF @ 25 V7520 pF @ 100 V
Power Dissipation (Max)
208W (Tc)500W (Tc)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
PG-TO247-3PG-TO263-3-2
Package / Case
TO-247-3TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
2Results
Applied FiltersRemove All
Showing
of 2
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
PG-TO263-3-2
SPB20N60C3ATMA1
MOSFET N-CH 600V 20.7A TO263-3
Infineon Technologies
2,595
In Stock
1 : £3.89000
Cut Tape (CT)
1,000 : £1.47363
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
20.7A (Tc)
10V
190mOhm @ 13.1A, 10V
3.9V @ 1mA
114 nC @ 10 V
±20V
2400 pF @ 25 V
-
208W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO263-3-2
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
AUIRFP4310Z BACK
SPW55N80C3FKSA1
MOSFET N-CH 800V 54.9A TO247-3
Infineon Technologies
246
In Stock
1 : £13.90000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
800 V
54.9A (Tc)
10V
85mOhm @ 32.6A, 10V
3.9V @ 3.3mA
288 nC @ 10 V
±20V
7520 pF @ 100 V
-
500W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-3
TO-247-3
Showing
of 2

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.