Single FETs, MOSFETs

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
C2D10120D
C3M0350120D
SICFET N-CH 1200V 7.6A TO247-3
Wolfspeed, Inc.
1,245
In Stock
1 : £4.44000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
7.6A (Tc)
15V
455mOhm @ 3.6A, 15V
3.6V @ 1mA
19 nC @ 15 V
+15V, -4V
345 pF @ 1000 V
-
50W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TO263-7
C3M0160120J
SICFET N-CH 1200V 17A TO263-7
Wolfspeed, Inc.
1,364
In Stock
1 : £5.42000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
17A (Tc)
15V
208mOhm @ 8.5A, 15V
3.6V @ 2.33mA
24 nC @ 15 V
+15V, -4V
632 pF @ 1000 V
-
90W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO263-7
C3M0060065J
SICFET N-CH 650V 36A TO263-7
Wolfspeed, Inc.
2,038
In Stock
1 : £5.68000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
36A (Tc)
15V
79mOhm @ 13.2A, 15V
3.6V @ 5mA
46 nC @ 15 V
+15V, -4V
1020 pF @ 600 V
-
136W (Tc)
-40°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
C3M0065090J
C3M0075120J
SICFET N-CH 1200V 30A D2PAK-7
Wolfspeed, Inc.
3,027
In Stock
1 : £6.59000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
30A (Tc)
15V
90mOhm @ 20A, 15V
4V @ 5mA
51 nC @ 15 V
+19V, -8V
1350 pF @ 1000 V
-
113.6W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
D2PAK-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO263-7
C3M0075120J-TR
SICFET N-CH 1200V 30A TO263-7
Wolfspeed, Inc.
1,083
In Stock
1 : £6.49000
Cut Tape (CT)
800 : £2.87753
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
30A (Tc)
15V
90mOhm @ 20A, 15V
4V @ 5mA
51 nC @ 15 V
+15V, -4V
1350 pF @ 1000 V
-
113.6W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
C2D10120D
C3M0075120D
SICFET N-CH 1200V 30A TO247-3
Wolfspeed, Inc.
125
In Stock
1 : £6.59000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
30A (Tc)
15V
90mOhm @ 20A, 15V
4V @ 5mA
54 nC @ 15 V
+19V, -8V
1350 pF @ 1000 V
-
113.6W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
C3M0065100K
C3M0075120K
SICFET N-CH 1200V 30A TO247-4L
Wolfspeed, Inc.
411
In Stock
1 : £7.23000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
30A (Tc)
15V
90mOhm @ 20A, 15V
4V @ 5mA
51 nC @ 15 V
+19V, -8V
1350 pF @ 1000 V
-
113.6W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
C2D10120D
C3M0040120D
1200V 40MOHM SIC MOSFET
Wolfspeed, Inc.
434
In Stock
1 : £9.00000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
66A (Tc)
15V
53.5mOhm @ 33.3A, 15V
3.6V @ 9.5mA
101 nC @ 15 V
+15V, -4V
2900 pF @ 1000 V
-
326W (Tc)
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TO263-7
C3M0032120J1
1200V 32MOHM SIC MOSFET
Wolfspeed, Inc.
346
In Stock
1 : £9.69000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
68A (Tc)
15V
43mOhm @ 41.4A, 15V
3.6V @ 11.5mA
111 nC @ 15 V
+15V, -4V
3424 pF @ 1000 V
-
277W (Tc)
-40°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
C3M0065100K
C3M0025065K
GEN 3 650V 25 M SIC MOSFET
Wolfspeed, Inc.
0
In Stock
Check Lead Time
1 : £9.69000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
97A (Tc)
15V
34mOhm @ 33.5A, 15V
3.6V @ 9.22mA
112 nC @ 15 V
+19V, -8V
2980 pF @ 600 V
-
326W (Tc)
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
C2D10120D
C3M0015065D
SICFET N-CH 650V 120A TO247-3
Wolfspeed, Inc.
269
In Stock
1 : £12.66000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
120A (Tc)
15V
21mOhm @ 55.8A, 15V
3.6V @ 15.5mA
188 nC @ 15 V
+15V, -4V
5011 pF @ 400 V
-
416W (Tc)
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
C3M0015065K
C3M0015065K
SICFET N-CH 650V 120A TO247-4L
Wolfspeed, Inc.
197
In Stock
1 : £12.47000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
120A (Tc)
15V
21mOhm @ 55.8A, 15V
3.6V @ 15.5mA
188 nC @ 15 V
+15V, -4V
5011 pF @ 400 V
-
416W (Tc)
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
C3M0065100K
C3M0021120K
SICFET N-CH 1200V 100A TO247-4L
Wolfspeed, Inc.
2,643
In Stock
1 : £13.04000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
100A (Tc)
15V
28.8mOhm @ 50A, 15V
3.6V @ 17.7mA
162 nC @ 15 V
+15V, -4V
4818 pF @ 1000 V
-
469W (Tc)
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
C2D10120D
C3M0021120D
SICFET N-CH 1200V 100A TO247-3
Wolfspeed, Inc.
140
In Stock
1 : £13.35000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
100A (Tc)
15V
28.8mOhm @ 50A, 15V
3.6V @ 17.7mA
160 nC @ 15 V
+15V, -4V
4818 pF @ 1000 V
-
469W (Tc)
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
C2D10120D
C3M0065090D
SICFET N-CH 900V 36A TO247-3
Wolfspeed, Inc.
560
In Stock
1 : £14.79000
Tube
Tube
Not For New Designs
N-Channel
SiCFET (Silicon Carbide)
900 V
36A (Tc)
15V
78mOhm @ 20A, 15V
3.5V @ 5mA
30.4 nC @ 15 V
+18V, -8V
660 pF @ 600 V
-
125W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
C3M0280090J-TR
C3M0065090J
SICFET N-CH 900V 35A D2PAK-7
Wolfspeed, Inc.
3,270
In Stock
1 : £15.18000
Tube
Tube
Not For New Designs
N-Channel
SiCFET (Silicon Carbide)
900 V
35A (Tc)
15V
78mOhm @ 20A, 15V
3.5V @ 5mA
30 nC @ 15 V
+19V, -8V
660 pF @ 600 V
-
113W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
C3M0280090J-TR
C3M0065090J-TR
SICFET N-CH 900V 35A D2PAK-7
Wolfspeed, Inc.
1,435
In Stock
1 : £15.18000
Cut Tape (CT)
800 : £8.62691
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
SiCFET (Silicon Carbide)
900 V
35A (Tc)
15V
78mOhm @ 20A, 15V
3.5V @ 5mA
30 nC @ 15 V
+19V, -8V
660 pF @ 600 V
-
113W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO263-7
C3M0350120J
SICFET N-CH 1200V 7.2A TO263-7
Wolfspeed, Inc.
509
In Stock
1 : £4.44000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
7.2A (Tc)
15V
455mOhm @ 3.6A, 15V
3.6V @ 1mA
13 nC @ 15 V
+15V, -4V
345 pF @ 1000 V
-
40.8W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
C2D10120D
C3M0160120D
SICFET N-CH 1200V 17A TO247-3
Wolfspeed, Inc.
2,503
In Stock
1 : £5.44000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
17A (Tc)
15V
208mOhm @ 8.5A, 15V
3.6V @ 2.33mA
38 nC @ 15 V
+15V, -4V
632 pF @ 1000 V
-
97W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
C2D10120D
C3M0060065D
SICFET N-CH 650V 37A TO247-3
Wolfspeed, Inc.
0
In Stock
Check Lead Time
1 : £6.58000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
37A (Tc)
15V
79mOhm @ 13.2A, 15V
3.6V @ 5mA
46 nC @ 15 V
+15V, -4V
1020 pF @ 600 V
-
150W (Tc)
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TOLL
C3M0045065L-TR
SIC, MOSFET, 45M, 650V, TOLL, IN
Wolfspeed, Inc.
2,448
In Stock
1 : £7.42000
Cut Tape (CT)
2,000 : £3.41366
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
49A (Tc)
15V
60mOhm @ 17.6A, 15V
3.6V @ 4.84mA
59 nC @ 15 V
+19V, -8V
1621 pF @ 400 V
-
164W (Tc)
-40°C ~ 175°C (TJ)
-
-
Surface Mount
TOLL
8-PowerSFN
C3M0065100K
C3M0045065K
GEN 3 650V 49A SIC MOSFET
Wolfspeed, Inc.
290
In Stock
1 : £7.31000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
49A (Tc)
15V
60mOhm @ 17.6A, 15V
3.6V @ 4.84mA
63 nC @ 15 V
+19V, -8V
1621 pF @ 600 V
-
176W (Tc)
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
C2D10120D
C3M0045065D
GEN 3 650V 45 M SIC MOSFET
Wolfspeed, Inc.
223
In Stock
1 : £7.42000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
49A (Tc)
15V
60mOhm @ 17.6A, 15V
3.6V @ 4.84mA
63 nC @ 15 V
+19V, -8V
1621 pF @ 600 V
-
176W (Tc)
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TO263-7
C3M0040120J1
1200V 40 M SIC MOSFET
Wolfspeed, Inc.
181
In Stock
1 : £9.00000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
64A (Tc)
15V
53.5mOhm @ 33.3A, 15V
3.6V @ 9.2mA
94 nC @ 15 V
+15V, -4V
2900 pF @ 1000 V
-
272W (Tc)
-40°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
C3M0065100K
C3M0040120K
1200V 40MOHM SIC MOSFET
Wolfspeed, Inc.
1,419
In Stock
1 : £9.12000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
66A (Tc)
15V
53.5mOhm @ 33.3A, 15V
3.6V @ 9.2mA
99 nC @ 15 V
+15V, -4V
2900 pF @ 1000 V
-
326W (Tc)
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
Showing
of 66

Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

  • Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
  • Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

  1. High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
  2. Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
  3. High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.