Single FETs, MOSFETs

Results: 4
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Current - Continuous Drain (Id) @ 25°C
8A (Tc)13A (Tc)23A (Tc)
Rds On (Max) @ Id, Vgs
22mOhm @ 23A, 12V40mOhm @ 13A, 12V65mOhm @ 8A, 12V
Vgs(th) (Max) @ Id
4.5V @ 1.44mA4.5V @ 490µA4.5V @ 790µA
Gate Charge (Qg) (Max) @ Vgs
51 nC @ 12 V83 nC @ 12 V150 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds
1932 pF @ 300 V3127 pF @ 300 V5639 pF @ 300 V
Power Dissipation (Max)
167W (Tc)245W (Tc)390W (Tc)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
PG-HSOF-8-2PG-TO220-3-1
Package / Case
8-PowerSFNTO-220-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Showing
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
PG-TO220-3-1
IPP60R022S7XKSA1
MOSFET N-CH 600V 23A TO220-3
Infineon Technologies
819
In Stock
1 : £8.42000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
23A (Tc)
12V
22mOhm @ 23A, 12V
4.5V @ 1.44mA
150 nC @ 12 V
±20V
5639 pF @ 300 V
-
390W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-3-1
TO-220-3
PG-HSOF-8-2
IPT60R022S7XTMA1
MOSFET N-CH 600V 23A 8HSOF
Infineon Technologies
2,139
In Stock
1 : £8.70000
Cut Tape (CT)
2,000 : £4.31590
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
23A (Tc)
12V
22mOhm @ 23A, 12V
4.5V @ 1.44mA
150 nC @ 12 V
±20V
5639 pF @ 300 V
-
390W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-HSOF-8-2
8-PowerSFN
PG-HSOF-8-2
IPT60R040S7XTMA1
MOSFET N-CH 600V 13A 8HSOF
Infineon Technologies
1,965
In Stock
1 : £5.88000
Cut Tape (CT)
2,000 : £2.57429
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
13A (Tc)
12V
40mOhm @ 13A, 12V
4.5V @ 790µA
83 nC @ 12 V
±20V
3127 pF @ 300 V
-
245W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-HSOF-8-2
8-PowerSFN
PG-HSOF-8-2
IPT60R065S7XTMA1
MOSFET N-CH 600V 8A 8HSOF
Infineon Technologies
0
In Stock
Check Lead Time
1 : £4.47000
Cut Tape (CT)
2,000 : £1.79036
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
8A (Tc)
12V
65mOhm @ 8A, 12V
4.5V @ 490µA
51 nC @ 12 V
±20V
1932 pF @ 300 V
-
167W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-HSOF-8-2
8-PowerSFN
Showing
of 4

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.