Single FETs, MOSFETs

Results: 10
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
15,168
In Stock
1 : £0.74000
Cut Tape (CT)
3,000 : £0.18155
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
3A (Tc)
10V
2Ohm @ 500mA, 10V
4.5V @ 30µA
3.8 nC @ 10 V
±20V
134 pF @ 400 V
-
6W (Tc)
-40°C ~ 150°C (TJ)
-
-
Surface Mount
PG-SOT223-3-1
TO-261-3
600VMOS
IPN60R360PFD7SATMA1
MOSFET N-CH 600V 10A SOT223
Infineon Technologies
12,277
In Stock
1 : £1.22000
Cut Tape (CT)
3,000 : £0.30095
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
10A (Tc)
10V
360mOhm @ 2.9A, 10V
4.5V @ 140µA
12.7 nC @ 10 V
±20V
534 pF @ 400 V
-
7W (Tc)
-40°C ~ 150°C (TJ)
-
-
Surface Mount
PG-SOT223-3-1
TO-261-3
686
In Stock
1 : £2.55000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
25A (Tc)
10V
125mOhm @ 7.8A, 10V
4.5V @ 390µA
36 nC @ 10 V
±20V
1503 pF @ 400 V
-
32W (Tc)
-40°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO220-FP
TO-220-3 Full Pack
534
In Stock
1 : £1.44000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
10A (Tc)
10V
360mOhm @ 2.9A, 10V
4.5V @ 140µA
12.7 nC @ 10 V
±20V
534 pF @ 400 V
-
23W (Tc)
-40°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO220-FP
TO-220-3 Full Pack
IPN60R1K0CEATMA1
IPN60R1K5PFD7SATMA1
MOSFET N-CH 600V 3.6A SOT223
Infineon Technologies
2,460
In Stock
1 : £0.77000
Cut Tape (CT)
3,000 : £0.19107
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
3.6A (Tc)
10V
1.5Ohm @ 700mA, 10V
4.5V @ 40µA
4.6 nC @ 10 V
±20V
169 pF @ 400 V
-
6W (Tc)
-40°C ~ 150°C (TJ)
-
-
Surface Mount
PG-SOT223-3
TO-261-4, TO-261AA
781
In Stock
1 : £2.02000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
16A (Tc)
10V
210mOhm @ 4.9A, 10V
4.5V @ 240µA
23 nC @ 10 V
±20V
1015 pF @ 400 V
-
25W (Tc)
-40°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO220-FP
TO-220-3 Full Pack
PG-TO251-3
IPS60R1K0PFD7SAKMA1
MOSFET N-CH 650V 4.7A TO251-3
Infineon Technologies
0
In Stock
43,500
Marketplace
944 : £0.25536
Bulk
1,500 : £0.28396
Tube
Bulk
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
650 V
4.7A (Tc)
10V
1Ohm @ 1A, 10V
4.5V @ 50µA
6 nC @ 10 V
±20V
230 pF @ 400 V
-
26W (Tc)
-40°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO251-3
TO-251-3 Short Leads, IPAK, TO-251AA
PG-TO251-3
IPS60R210PFD7SAKMA1
MOSFET N-CH 650V 16A TO251-3
Infineon Technologies
0
In Stock
4,069
Marketplace
361 : £0.66233
Bulk
1,500 : £0.65039
Tube
Bulk
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
650 V
16A (Tc)
10V
210mOhm @ 4.9A, 10V
4.5V @ 240µA
23 nC @ 10 V
±20V
1015 pF @ 400 V
-
64W (Tc)
-40°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO251-3
TO-251-3 Short Leads, IPAK, TO-251AA
PG-TO251-3
IPS60R600PFD7SAKMA1
MOSFET N-CH 650V 6A TO251-3
Infineon Technologies
0
In Stock
1,500 : £0.31507
Tube
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
650 V
6A (Tc)
10V
600mOhm @ 1.7A, 10V
4.5V @ 80µA
8.5 nC @ 10 V
±20V
344 pF @ 400 V
-
31W (Tc)
-40°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO251-3
TO-251-3 Short Leads, IPAK, TO-251AA
PG-TO251-3
IPS60R360PFD7SAKMA1
MOSFET N-CH 650V 10A TO251-3
Infineon Technologies
0
In Stock
1,500 : £0.40599
Tube
Tube
Obsolete
N-Channel
MOSFET (Metal Oxide)
650 V
10A (Tc)
10V
360mOhm @ 2.9A, 10V
4.5V @ 140µA
12.7 nC @ 10 V
±20V
534 pF @ 400 V
-
43W (Tc)
-40°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO251-3
TO-251-3 Short Leads, IPAK, TO-251AA
Showing
of 10

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.