Single FETs, MOSFETs

Showing

of 6

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
IXFH270N06T3 MOSFET N-CH 60V 270A TO247 IXYS	305 In Stock	1 : £6.29000 Tube	HiperFET™, TrenchT3™	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	60 V	270A (Tc)	10V	3.1mOhm @ 100A, 10V	4V @ 250µA	200 nC @ 10 V	±20V	12600 pF @ 25 V	-	480W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247 (IXTH)	TO-247-3
IXFA220N06T3 MOSFET N-CH 60V 220A TO263 IXYS	0 In Stock	50 : £2.27020 Tube	HiperFET™, TrenchT3™	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	60 V	220A (Tc)	10V	4mOhm @ 100A, 10V	4V @ 250µA	136 nC @ 10 V	±20V	8500 pF @ 25 V	-	440W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXFH220N06T3 MOSFET N-CH 60V 220A TO247 IXYS	0 In Stock	300 : £2.43100 Tube	HiperFET™, TrenchT3™	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	60 V	220A (Tc)	10V	4mOhm @ 100A, 10V	4V @ 250µA	136 nC @ 10 V	±20V	8500 pF @ 25 V	-	440W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247	TO-247-3
IXFP220N06T3 MOSFET N-CH 60V 220A TO220AB IXYS	0 In Stock	50 : £2.68280 Tube	HiperFET™, TrenchT3™	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	60 V	220A (Tc)	10V	4mOhm @ 100A, 10V	4V @ 250µA	136 nC @ 10 V	±20V	8500 pF @ 25 V	-	440W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220-3	TO-220-3
IXFP270N06T3 MOSFET N-CH 60V 270A TO220AB IXYS	0 In Stock	50 : £3.49920 Tube	HiperFET™, TrenchT3™	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	60 V	270A (Tc)	10V	3.1mOhm @ 100A, 10V	4V @ 250µA	200 nC @ 10 V	±20V	12600 pF @ 25 V	-	480W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220-3	TO-220-3
IXFA270N06T3 MOSFET N-CH 60V 270A TO263AA IXYS	0 In Stock	1 : £4.45000 Tube	HiperFET™, TrenchT3™	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	60 V	270A (Tc)	10V	3.1mOhm @ 100A, 10V	4V @ 250µA	200 nC @ 10 V	±20V	12600 pF @ 25 V	-	480W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263AA	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Showing

of 6

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.