Single FETs, MOSFETs

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-264
MOSFET N-CH 250V 140A TO264AA
IXYS
103
In Stock
1 : £12.14000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
250 V
140A (Tc)
10V
17mOhm @ 60A, 10V
5V @ 4mA
255 nC @ 10 V
±20V
19000 pF @ 25 V
-
960W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-264AA (IXFK)
TO-264-3, TO-264AA
TO-247-3 Variant
MOSFET N-CH 300V 160A PLUS247-3
IXYS
459
In Stock
1 : £14.99000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
300 V
160A (Tc)
10V
19mOhm @ 60A, 10V
5V @ 8mA
335 nC @ 10 V
±20V
28000 pF @ 25 V
-
1390W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PLUS247™-3
TO-247-3 Variant
TO-264
MOSFET N-CH 300V 160A TO264AA
IXYS
4,500
In Stock
1 : £15.11000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
300 V
160A (Tc)
10V
19mOhm @ 60A, 10V
5V @ 8mA
335 nC @ 10 V
±20V
28000 pF @ 25 V
-
1390W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-264AA (IXFK)
TO-264-3, TO-264AA
TO-247-3 Variant
MOSFET N-CH 200V 230A PLUS247-3
IXYS
621
In Stock
1 : £19.75000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
200 V
230A (Tc)
10V
7.5mOhm @ 60A, 10V
5V @ 8mA
378 nC @ 10 V
±20V
28000 pF @ 25 V
-
1670W (Tc)
-
-
-
Through Hole
PLUS247™-3
TO-247-3 Variant
TO-264
MOSFET N-CH 200V 230A TO264AA
IXYS
794
In Stock
1 : £19.98000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
200 V
230A (Tc)
10V
7.5mOhm @ 60A, 10V
5V @ 8mA
378 nC @ 10 V
±20V
28000 pF @ 25 V
-
1670W (Tc)
-
-
-
Through Hole
TO-264AA (IXFK)
TO-264-3, TO-264AA
TO-247_IXFH
MOSFET N-CH 300V 86A TO247AD
IXYS
205
In Stock
1 : £9.23000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
300 V
86A (Tc)
10V
43mOhm @ 43A, 10V
5V @ 4mA
180 nC @ 10 V
±20V
11300 pF @ 25 V
-
860W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247AD (IXFH)
TO-247-3
TO-247-3 Variant
MOSFET N-CH 100V 360A PLUS247-3
IXYS
102
In Stock
960
Factory
1 : £11.28000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
360A (Tc)
10V
2.9mOhm @ 100A, 10V
5V @ 3mA
525 nC @ 10 V
±20V
33000 pF @ 25 V
-
1250W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PLUS247™-3
TO-247-3 Variant
TO-264
MOSFET N-CH 100V 360A TO264AA
IXYS
115
In Stock
1 : £11.41000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
360A (Tc)
10V
2.9mOhm @ 100A, 10V
5V @ 3mA
525 nC @ 10 V
±20V
33000 pF @ 25 V
-
1250W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-264AA (IXFK)
TO-264-3, TO-264AA
TO-264
MOSFET N-CH 250V 180A TO264AA
IXYS
1,149
In Stock
1 : £15.11000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
250 V
180A (Tc)
10V
12.9mOhm @ 60A, 10V
5V @ 8mA
345 nC @ 10 V
±20V
28000 pF @ 25 V
-
1390W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-264AA (IXFK)
TO-264-3, TO-264AA
TO-247-3 Variant
MOSFET N-CH 250V 180A PLUS247-3
IXYS
245
In Stock
1 : £14.99000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
250 V
180A (Tc)
10V
12.9mOhm @ 60A, 10V
5V @ 8mA
345 nC @ 10 V
±20V
28000 pF @ 25 V
-
1390W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PLUS247™-3
TO-247-3 Variant
TO-247-3 Variant
MOSFET N-CH 100V 420A PLUS247-3
IXYS
226
In Stock
1 : £15.49000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
420A (Tc)
10V
2.6mOhm @ 60A, 10V
5V @ 8mA
670 nC @ 10 V
±20V
47000 pF @ 25 V
-
1670W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PLUS247™-3
TO-247-3 Variant
IXYX110N120A4
MOSFET N-CH 300V 46A TO247
IXYS
208
In Stock
1 : £6.55000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
300 V
46A (Tc)
10V
80mOhm @ 23A, 10V
5V @ 4mA
86 nC @ 10 V
±20V
4770 pF @ 25 V
-
460W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247 (IXTH)
TO-247-3
SOT-227B
MOSFET N-CH 300V 130A SOT227B
IXYS
17
In Stock
1 : £23.74000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
300 V
130A (Tc)
10V
19mOhm @ 60A, 10V
5V @ 8mA
335 nC @ 10 V
±20V
28000 pF @ 25 V
-
900W (Tc)
-55°C ~ 150°C (TJ)
-
-
Chassis Mount
SOT-227B
SOT-227-4, miniBLOC
TO-247_IXFH
MOSFET N-CH 250V 110A TO247AD
IXYS
15
In Stock
1 : £7.91000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
250 V
110A (Tc)
10V
24mOhm @ 55A, 10V
4.5V @ 3mA
157 nC @ 10 V
±20V
9400 pF @ 25 V
-
694W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247AD (IXFH)
TO-247-3
SOT-227B
MOSFET N-CH 100V 360A SOT-227B
IXYS
0
In Stock
Check Lead Time
1 : £21.38000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
360A (Tc)
10V
2.6mOhm @ 180A, 10V
4.5V @ 250µA
505 nC @ 10 V
±20V
36000 pF @ 25 V
-
830W (Tc)
-55°C ~ 175°C (TJ)
-
-
Chassis Mount
SOT-227B
SOT-227-4, miniBLOC
TO-264
MOSFET N-CH 200V 170A TO264AA
IXYS
0
In Stock
Check Lead Time
1 : £12.14000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
200 V
170A (Tc)
10V
11mOhm @ 60A, 10V
5V @ 4mA
265 nC @ 10 V
±20V
19600 pF @ 25 V
-
1150W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-264AA (IXFK)
TO-264-3, TO-264AA
TO-264
MOSFET N-CH 100V 420A TO264AA
IXYS
0
In Stock
Check Lead Time
1 : £15.56000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
420A (Tc)
10V
2.6mOhm @ 60A, 10V
5V @ 8mA
670 nC @ 10 V
±20V
47000 pF @ 25 V
-
1670W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-264AA (IXFK)
TO-264-3, TO-264AA
SOT-227B
MOSFET N-CH 250V 168A SOT227B
IXYS
0
In Stock
Check Lead Time
1 : £22.55000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
250 V
168A (Tc)
10V
12.9mOhm @ 60A, 10V
5V @ 8mA
345 nC @ 10 V
±20V
28000 pF @ 25 V
-
900W (Tc)
-55°C ~ 150°C (TJ)
-
-
Chassis Mount
SOT-227B
SOT-227-4, miniBLOC
SOT-227B
MOSFET N-CH 100V 420A SOT227B
IXYS
0
In Stock
Check Lead Time
1 : £24.15000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
420A (Tc)
10V
2.3mOhm @ 60A, 10V
5V @ 8mA
670 nC @ 10 V
±20V
47000 pF @ 25 V
-
1070W (Tc)
-55°C ~ 175°C (TJ)
-
-
Chassis Mount
SOT-227B
SOT-227-4, miniBLOC
TO-247_IXFH
MOSFET N-CH 100V 230A TO247AD
IXYS
0
In Stock
720
Factory
Check Lead Time
1 : £7.82000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
230A (Tc)
10V
4.7mOhm @ 500mA, 10V
4.5V @ 1mA
250 nC @ 10 V
±20V
15300 pF @ 25 V
-
650W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247AD (IXFH)
TO-247-3
SOT-227B
MOSFET N-CH 200V 220A SOT227B
IXYS
0
In Stock
Check Lead Time
1 : £28.38000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
200 V
220A (Tc)
10V
7.5mOhm @ 60A, 10V
5V @ 8mA
378 nC @ 10 V
±20V
28000 pF @ 25 V
-
1090W (Tc)
-55°C ~ 175°C (TJ)
-
-
Chassis Mount
SOT-227B
SOT-227-4, miniBLOC
TO-247-3 Variant
MOSFET N-CH 300V 120A PLUS247-3
IXYS
0
In Stock
Check Lead Time
300 : £6.38107
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
300 V
120A (Tc)
10V
24mOhm @ 60A, 10V
5V @ 4mA
265 nC @ 10 V
±20V
20000 pF @ 25 V
-
960W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PLUS247™-3
TO-247-3 Variant
TO-247_IXFH
MOSFET N-CH 200V 150A TO247AD
IXYS
0
In Stock
Check Lead Time
1 : £14.78000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
200 V
150A (Tc)
10V
15mOhm @ 75A, 10V
5V @ 4mA
177 nC @ 10 V
±20V
11700 pF @ 25 V
-
890W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247AD (IXFH)
TO-247-3
TO-220-3
MOSFET N-CH 100V 130A TO220AB
IXYS
0
In Stock
Check Lead Time
300 : £1.73677
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
130A (Tc)
10V
9.1mOhm @ 25A, 10V
4.5V @ 1mA
104 nC @ 10 V
±20V
5080 pF @ 25 V
-
360W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220-3
TO-220-3
TO-263AB
MOSFET N-CH 100V 130A TO263
IXYS
0
In Stock
Check Lead Time
300 : £1.83510
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
130A (Tc)
10V
9.1mOhm @ 25A, 10V
4.5V @ 1mA
104 nC @ 10 V
±20V
5080 pF @ 25 V
-
360W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263AA (IXFA)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Showing
of 39

Single FET, MOSFETs


Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

  • Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
  • Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

  1. High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
  2. Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
  3. High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.