Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
IXTY02N120P MOSFET N-CH 1200V 200MA TO252 IXYS	11,526 In Stock 2,100 Factory	1 : £2.37000 Tube	Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1200 V	200mA (Tc)	10V	75Ohm @ 500mA, 10V	4V @ 100µA	4.7 nC @ 10 V	±20V	104 pF @ 25 V	-	33W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
IXTA10P50P-TRL MOSFET P-CH 500V 10A TO263 IXYS	52,700 In Stock	1 : £6.01000 Cut Tape (CT) 800 : £2.57753 Tape & Reel (TR)	Polar	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	500 V	10A (Tc)	10V	1Ohm @ 5A, 10V	4V @ 250µA	50 nC @ 10 V	±20V	2840 pF @ 25 V	-	300W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263AA	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTA26P20P MOSFET P-CH 200V 26A TO263 IXYS	4,861 In Stock	1 : £6.01000 Tube	Polar	Tube	Active	P-Channel	MOSFET (Metal Oxide)	200 V	26A (Tc)	10V	170mOhm @ 13A, 10V	4V @ 250µA	56 nC @ 10 V	±20V	2740 pF @ 25 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263AA	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTA26P20P-TRL MOSFET P-CH 200V 26A TO263 IXYS	2,321 In Stock	1 : £6.01000 Cut Tape (CT) 800 : £2.57753 Tape & Reel (TR)	Polar	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	200 V	26A (Tc)	10V	170mOhm @ 13A, 10V	4V @ 250µA	56 nC @ 10 V	±20V	2740 pF @ 25 V	-	300W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTA10P50P MOSFET P-CH 500V 10A TO263 IXYS	770 In Stock	1 : £6.01000 Tube	Polar	Tube	Active	P-Channel	MOSFET (Metal Oxide)	500 V	10A (Tc)	10V	1Ohm @ 5A, 10V	4V @ 250µA	50 nC @ 10 V	±20V	2840 pF @ 25 V	-	300W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263AA	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTP02N120P MOSFET N-CH 1200V 200MA TO220AB IXYS	1,309 In Stock	1 : £2.60000 Tube	Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1200 V	200mA (Tc)	10V	75Ohm @ 100mA, 10V	4V @ 100µA	4.7 nC @ 10 V	±20V	104 pF @ 25 V	-	33W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3	TO-220-3
IXTY2N100P MOSFET N-CH 1000V 2A TO252 IXYS	1,220 In Stock	1 : £3.30000 Tube	Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	2A (Tc)	10V	7.5Ohm @ 500mA, 10V	4.5V @ 100µA	24.3 nC @ 10 V	±20V	655 pF @ 25 V	-	86W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
IXTY1R4N120P MOSFET N-CH 1200V 1.4A TO252 IXYS	458 In Stock 1,120 Factory	1 : £3.79000 Tube	Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1200 V	1.4A (Tc)	10V	-	4.5V @ 100µA	-	±20V	-	-	-	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
IXTA06N120P-TRL MOSFET N-CH 1200V 600MA TO263 IXYS	5,449 In Stock	1 : £4.12000 Cut Tape (CT) 800 : £1.56466 Tape & Reel (TR)	Polar	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	1200 V	600mA (Tc)	10V	34Ohm @ 300mA, 10V	4V @ 50µA	13.3 nC @ 10 V	±30V	236 pF @ 25 V	-	42W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTA06N120P MOSFET N-CH 1200V 600MA TO263 IXYS	1,140 In Stock	1 : £4.12000 Tube	Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1200 V	600mA (Tc)	10V	32Ohm @ 300mA, 10V	4.5V @ 50µA	13.3 nC @ 10 V	±20V	270 pF @ 25 V	-	42W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263AA	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTQ50N20P MOSFET N-CH 200V 50A TO3P IXYS	439 In Stock 930 Factory	1 : £4.72000 Tube	Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	50A (Tc)	10V	60mOhm @ 50A, 10V	5V @ 250µA	70 nC @ 10 V	±20V	2720 pF @ 25 V	-	360W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-3P	TO-3P-3, SC-65-3
IXTQ170N10P MOSFET N-CH 100V 170A TO3P IXYS	640 In Stock	1 : £9.45000 Tube	Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	170A (Tc)	10V	9mOhm @ 500mA, 10V	5V @ 250µA	198 nC @ 10 V	±20V	6000 pF @ 25 V	-	715W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-3P	TO-3P-3, SC-65-3
IXTQ88N30P MOSFET N-CH 300V 88A TO3P IXYS	706 In Stock	1 : £10.11000 Tube	Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	300 V	88A (Tc)	10V	40mOhm @ 44A, 10V	5V @ 250µA	180 nC @ 10 V	±20V	6300 pF @ 25 V	-	600W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-3P	TO-3P-3, SC-65-3
IXTQ150N15P MOSFET N-CH 150V 150A TO3P IXYS	209 In Stock	1 : £10.11000 Tube	Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	150 V	150A (Tc)	10V	13mOhm @ 500mA, 10V	5V @ 250µA	190 nC @ 10 V	±20V	5800 pF @ 25 V	-	714W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-3P	TO-3P-3, SC-65-3
IXTK200N10P MOSFET N-CH 100V 200A TO264 IXYS	599 In Stock	1 : £12.63000 Tube	Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	200A (Tc)	10V	7.5mOhm @ 100A, 10V	5V @ 500µA	240 nC @ 10 V	±20V	7600 pF @ 25 V	-	800W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-264 (IXTK)	TO-264-3, TO-264AA
IXTK120N25P MOSFET N-CH 250V 120A TO264 IXYS	579 In Stock	1 : £12.63000 Tube	Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	250 V	120A (Tc)	10V	24mOhm @ 60A, 10V	5V @ 500µA	185 nC @ 10 V	±20V	8000 pF @ 25 V	-	700W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-264 (IXTK)	TO-264-3, TO-264AA
IXTN170P10P MOSFET P-CH 100V 170A SOT227B IXYS	600 In Stock	1 : £27.37000 Tube	Polar	Tube	Active	P-Channel	MOSFET (Metal Oxide)	100 V	170A (Tc)	10V	12mOhm @ 500mA, 10V	4V @ 1mA	240 nC @ 10 V	±20V	12600 pF @ 25 V	-	890W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXTP08N100P MOSFET N-CH 1000V 800MA TO220AB IXYS	214 In Stock 1,050 Factory	1 : £2.69000 Tube	Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	800mA (Tc)	10V	20Ohm @ 500mA, 10V	4V @ 50µA	11.3 nC @ 10 V	±20V	240 pF @ 25 V	-	42W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3	TO-220-3
IXTA1R4N100P MOSFET N-CH 1000V 1.4A TO263 IXYS	455 In Stock 300 Factory	1 : £3.21000 Tube	Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	1.4A (Tc)	10V	11Ohm @ 500mA, 10V	4.5V @ 50µA	17.8 nC @ 10 V	±20V	450 pF @ 25 V	-	63W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263AA	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTP16N50P MOSFET N-CH 500V 16A TO220AB IXYS	162 In Stock	1 : £4.23000 Tube	Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	16A (Tc)	10V	400mOhm @ 8A, 10V	5.5V @ 250µA	43 nC @ 10 V	±30V	2250 pF @ 25 V	-	300W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3	TO-220-3
IXTA62N15P MOSFET N-CH 150V 62A TO263 IXYS	567 In Stock 750 Factory	1 : £4.45000 Tube	Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	150 V	62A (Tc)	10V	40mOhm @ 31A, 10V	5.5V @ 250µA	70 nC @ 10 V	±20V	2250 pF @ 25 V	-	350W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263AA	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTA75N10P MOSFET N-CH 100V 75A TO263 IXYS	151 In Stock 1,250 Factory	1 : £4.45000 Tube	Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	75A (Tc)	10V	25mOhm @ 500mA, 10V	5.5V @ 250µA	74 nC @ 10 V	±20V	2250 pF @ 25 V	-	360W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263AA	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTP50N20P MOSFET N-CH 200V 50A TO220AB IXYS	452 In Stock 650 Factory	1 : £4.48000 Tube	Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	50A (Tc)	10V	60mOhm @ 50A, 10V	5V @ 250µA	70 nC @ 10 V	±20V	2720 pF @ 25 V	-	360W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220-3	TO-220-3
IXTA1N120P MOSFET N-CH 1200V 1A TO263 IXYS	872 In Stock 850 Factory	1 : £4.56000 Tube	Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1200 V	1A (Tc)	10V	20Ohm @ 500mA, 10V	4.5V @ 50µA	17.6 nC @ 10 V	±20V	550 pF @ 25 V	-	63W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263AA	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXTA1R4N120P MOSFET N-CH 1200V 1.4A TO263 IXYS	606 In Stock 1,000 Factory	1 : £4.98000 Tube	Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1200 V	1.4A (Tc)	10V	13Ohm @ 500mA, 10V	4.5V @ 100µA	24.8 nC @ 10 V	±20V	666 pF @ 25 V	-	86W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263AA	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.

Single FET, MOSFETs

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