Single FETs, MOSFETs

Results: 52
Stocking Options
Environmental Options
Media
Exclude
52Results
Applied FiltersRemove All

Showing
of 52
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-264
MOSFET N-CH 1000V 24A TO264AA
IXYS
1,500
In Stock
1 : £20.97000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
1000 V
24A (Tc)
10V
440mOhm @ 12A, 10V
6.5V @ 4mA
140 nC @ 10 V
±30V
7200 pF @ 25 V
-
1000W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-264AA (IXFK)
TO-264-3, TO-264AA
TO-247_IXFH
MOSFET N-CH 1000V 18A TO247AD
IXYS
536
In Stock
1 : £15.38000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
1000 V
18A (Tc)
10V
660mOhm @ 9A, 10V
6.5V @ 4mA
90 nC @ 10 V
±30V
4890 pF @ 25 V
-
830W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247AD (IXFH)
TO-247-3
TO-247-3 Variant
MOSFET N-CH 800V 32A PLUS247-3
IXYS
440
In Stock
780
Factory
1 : £23.03000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
800 V
32A (Tc)
10V
270mOhm @ 16A, 10V
6.5V @ 4mA
140 nC @ 10 V
±30V
6940 pF @ 25 V
-
1000W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PLUS247™-3
TO-247-3 Variant
TO-268
MOSFET N-CH 1000V 15A TO268
IXYS
144
In Stock
1 : £14.48000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
1000 V
15A (Tc)
10V
1.05Ohm @ 7.5A, 10V
6.5V @ 4mA
64 nC @ 10 V
±30V
3250 pF @ 25 V
-
690W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-268AA
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
TO-247-ISOPLUS-EP-(R)
MOSFET N-CH 1000V 10A ISOPLUS247
IXYS
205
In Stock
1 : £16.41000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
1000 V
10A (Tc)
10V
1.2Ohm @ 7.5A, 10V
6.5V @ 4mA
64 nC @ 10 V
±30V
3250 pF @ 25 V
-
400W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
ISOPLUS247™
TO-247-3
TO-247-3 Variant
MOSFET N-CH 500V 64A PLUS247-3
IXYS
195
In Stock
1 : £20.84000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
500 V
64A (Tc)
10V
85mOhm @ 32A, 10V
6.5V @ 4mA
145 nC @ 10 V
±30V
6950 pF @ 25 V
-
1000W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PLUS247™-3
TO-247-3 Variant
TO-264
MOSFET N-CH 800V 32A TO264AA
IXYS
442
In Stock
1 : £20.97000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
800 V
32A (Tc)
10V
270mOhm @ 16A, 10V
6.5V @ 4mA
140 nC @ 10 V
±30V
6940 pF @ 25 V
-
1000W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-264AA (IXFK)
TO-264-3, TO-264AA
TO-247-ISOPLUS-EP-(R)
MOSFET N-CH 1000V 18A ISOPLUS247
IXYS
367
In Stock
1 : £23.03000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
1000 V
18A (Tc)
10V
490mOhm @ 12A, 10V
6.5V @ 4mA
140 nC @ 10 V
±30V
7200 pF @ 25 V
-
500W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
ISOPLUS247™
TO-247-3
TO-247-ISOPLUS-EP-(R)
MOSFET N-CH 500V 50A ISOPLUS247
IXYS
173
In Stock
1 : £25.50000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
500 V
50A (Tc)
10V
72mOhm @ 40A, 10V
6.5V @ 8mA
200 nC @ 10 V
±30V
10000 pF @ 25 V
-
570W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
ISOPLUS247™
TO-247-3
TO-264
MOSFET N-CH 1000V 32A TO264AA
IXYS
661
In Stock
1 : £32.66000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
1000 V
32A (Tc)
10V
320mOhm @ 16A, 10V
6.5V @ 8mA
195 nC @ 10 V
±30V
9940 pF @ 25 V
-
1250W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-264AA (IXFK)
TO-264-3, TO-264AA
SOT-227B
MOSFET N-CH 600V 66A SOT227B
IXYS
290
In Stock
1 : £42.91000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
66A (Tc)
10V
75mOhm @ 41A, 10V
6.5V @ 8mA
275 nC @ 10 V
±30V
13500 pF @ 25 V
-
960W (Tc)
-55°C ~ 150°C (TJ)
-
-
Chassis Mount
SOT-227B
SOT-227-4, miniBLOC
SOT-227B
MOSFET N-CH 1000V 28A SOT227B
IXYS
284
In Stock
1 : £44.81000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
1000 V
28A (Tc)
10V
320mOhm @ 16A, 10V
6.5V @ 8mA
195 nC @ 10 V
±30V
9940 pF @ 25 V
-
780W (Tc)
-55°C ~ 150°C (TJ)
-
-
Chassis Mount
SOT-227B
SOT-227-4, miniBLOC
TO-247-ISOPLUS-EP-(R)
MOSFET N-CH 800V 24A ISOPLUS247
IXYS
277
In Stock
1 : £25.19000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
800 V
24A (Tc)
10V
300mOhm @ 16A, 10V
6.5V @ 4mA
140 nC @ 10 V
±30V
6940 pF @ 25 V
-
500W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
ISOPLUS247™
TO-247-3
HiPerFET_TO-247-3
MOSFET N-CH 500V 30A TO247AD
IXYS
48
In Stock
1 : £10.84000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
500 V
30A (Tc)
10V
200mOhm @ 15A, 10V
6.5V @ 4mA
62 nC @ 10 V
±20V
3200 pF @ 25 V
-
690W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247AD (IXFH)
TO-247-3
TO-247_IXFH
MOSFET N-CH 300V 50A TO247AD
IXYS
8
In Stock
450
Factory
1 : £10.84000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
300 V
50A (Tc)
10V
80mOhm @ 25A, 10V
6.5V @ 4mA
65 nC @ 10 V
±20V
3160 pF @ 25 V
-
690W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247AD (IXFH)
TO-247-3
TO-247-3 Variant
MOSFET N-CH 1000V 32A PLUS247-3
IXYS
56
In Stock
1 : £23.66000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
1000 V
32A (Tc)
10V
320mOhm @ 16A, 10V
6.5V @ 8mA
195 nC @ 10 V
±30V
9940 pF @ 25 V
-
1250W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PLUS247™-3
TO-247-3 Variant
SOT-227B
MOSFET N-CH 500V 63A SOT227B
IXYS
60
In Stock
1 : £37.02000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
500 V
63A (Tc)
10V
65mOhm @ 40A, 10V
6.5V @ 8mA
200 nC @ 10 V
±30V
10000 pF @ 25 V
-
780W (Tc)
-55°C ~ 150°C (TJ)
-
-
Chassis Mount
SOT-227B
SOT-227-4, miniBLOC
TO-268
MOSFET N-CH 500V 30A TO268
IXYS
30
In Stock
1 : £11.90000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
500 V
30A (Tc)
10V
200mOhm @ 15A, 10V
6.5V @ 4mA
62 nC @ 10 V
±20V
3200 pF @ 25 V
-
690W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-268AA
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
TO-247-ISOPLUS-EP-(R)
MOSFET N-CH 500V 25A ISOPLUS247
IXYS
23
In Stock
1 : £18.51000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
500 V
25A (Tc)
10V
154mOhm @ 22A, 10V
6.5V @ 4mA
93 nC @ 10 V
±30V
4800 pF @ 25 V
-
300W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
ISOPLUS247™
TO-247-3
TO-247-3 Variant
MOSFET N-CH 600V 48A PLUS247-3
IXYS
38
In Stock
1 : £20.84000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
48A (Tc)
10V
140mOhm @ 24A, 10V
6.5V @ 4mA
140 nC @ 10 V
±30V
7020 pF @ 25 V
-
1000W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PLUS247™-3
TO-247-3 Variant
TO-247-3 Variant
MOSFET N-CH 1000V 24A PLUS247-3
IXYS
36
In Stock
360
Factory
1 : £20.84000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
1000 V
24A (Tc)
10V
440mOhm @ 12A, 10V
6.5V @ 4mA
140 nC @ 10 V
±30V
7200 pF @ 25 V
-
1000W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PLUS247™-3
TO-247-3 Variant
TO-264
MOSFET N-CH 600V 48A TO264AA
IXYS
6
In Stock
1 : £20.97000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
48A (Tc)
10V
140mOhm @ 24A, 10V
6.5V @ 4mA
140 nC @ 10 V
±30V
7020 pF @ 25 V
-
1000W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-264AA (IXFK)
TO-264-3, TO-264AA
TO-247-ISOPLUS-EP-(R)
MOSFET N-CH 600V 42A ISOPLUS247
IXYS
30
In Stock
1 : £28.61000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
42A (Tc)
10V
104mOhm @ 32A, 10V
6.5V @ 4mA
190 nC @ 10 V
±30V
9930 pF @ 25 V
-
568W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
ISOPLUS247™
TO-247-3
TO-264
MOSFET N-CH 600V 82A PLUS264
IXYS
21
In Stock
1 : £30.83000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
82A (Tc)
10V
75mOhm @ 41A, 10V
6.5V @ 8mA
275 nC @ 10 V
±30V
13500 pF @ 25 V
-
1560W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PLUS264™
TO-264-3, TO-264AA
TO-247-ISOPLUS-EP-(R)
MOSFET N-CH 1000V 23A ISOPLUS247
IXYS
26
In Stock
1 : £31.58000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
1000 V
23A (Tc)
10V
350mOhm @ 16A, 10V
6.5V @ 8mA
195 nC @ 10 V
±30V
9940 pF @ 25 V
-
570W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
ISOPLUS247™
TO-247-3
Showing
of 52

Single FET, MOSFETs


Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

  • Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
  • Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

  1. High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
  2. Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
  3. High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.