Single FETs, MOSFETs

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT-227B
MOSFET N-CH 200V 115A SOT227B
IXYS
1,037
In Stock
1 : £22.71000
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Tube
Active
N-Channel
MOSFET (Metal Oxide)
200 V
115A (Tc)
10V, 15V
18mOhm @ 70A, 10V
5V @ 4mA
240 nC @ 10 V
±20V
7500 pF @ 25 V
-
680W (Tc)
-55°C ~ 175°C (TJ)
-
-
Chassis Mount
SOT-227B
SOT-227-4, miniBLOC
TO-247_IXFH
MOSFET N-CH 300V 52A TO247AD
IXYS
645
In Stock
1 : £6.60000
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Tube
Active
N-Channel
MOSFET (Metal Oxide)
300 V
52A (Tc)
10V
66mOhm @ 500mA, 10V
5V @ 4mA
110 nC @ 10 V
±20V
3490 pF @ 25 V
-
400W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247AD (IXFH)
TO-247-3
TO-247_IXFH
MOSFET N-CH 500V 44A TO247AD
IXYS
488
In Stock
1 : £9.99000
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Active
N-Channel
MOSFET (Metal Oxide)
500 V
44A (Tc)
10V
140mOhm @ 22A, 10V
5V @ 4mA
98 nC @ 10 V
±30V
5440 pF @ 25 V
-
658W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247AD (IXFH)
TO-247-3
TO-268
MOSFET N-CH 200V 96A TO268
IXYS
183
In Stock
1 : £10.09000
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Tube
Active
N-Channel
MOSFET (Metal Oxide)
200 V
96A (Tc)
10V
24mOhm @ 500mA, 10V
5V @ 4mA
145 nC @ 10 V
±20V
4800 pF @ 25 V
-
600W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-268AA
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
IXYX110N120A4
MOSFET N-CH 250V 100A TO247AD
IXYS
268
In Stock
1 : £10.46000
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N-Channel
MOSFET (Metal Oxide)
250 V
100A (Tc)
10V
27mOhm @ 50A, 10V
5V @ 4mA
185 nC @ 10 V
±20V
6300 pF @ 25 V
-
600W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247 (IXTH)
TO-247-3
TO-247_IXFH
MOSFET N-CH 100V 170A TO247AD
IXYS
155
In Stock
480
Factory
1 : £10.46000
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N-Channel
MOSFET (Metal Oxide)
100 V
170A (Tc)
10V
9mOhm @ 500mA, 10V
5V @ 4mA
198 nC @ 10 V
±20V
6000 pF @ 25 V
-
715W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247AD (IXFH)
TO-247-3
TO-247_IXFH
MOSFET N-CH 150V 150A TO247AD
IXYS
103
In Stock
1 : £10.46000
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N-Channel
MOSFET (Metal Oxide)
150 V
150A (Tc)
10V
13mOhm @ 500mA, 10V
5V @ 4mA
190 nC @ 10 V
±20V
5800 pF @ 25 V
-
714W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247AD (IXFH)
TO-247-3
TO-264
MOSFET N-CH 500V 44A TO264AA
IXYS
568
In Stock
825
Factory
1 : £10.58000
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Active
N-Channel
MOSFET (Metal Oxide)
500 V
44A (Tc)
10V
140mOhm @ 22A, 10V
5V @ 4mA
98 nC @ 10 V
±30V
5440 pF @ 25 V
-
658W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-264AA (IXFK)
TO-264-3, TO-264AA
TO-247-3 Variant
MOSFET N-CH 250V 120A PLUS247-3
IXYS
370
In Stock
1 : £13.34000
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Tube
Active
N-Channel
MOSFET (Metal Oxide)
250 V
120A (Tc)
10V
24mOhm @ 60A, 10V
5V @ 4mA
185 nC @ 10 V
±20V
8000 pF @ 25 V
-
700W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PLUS247™-3
TO-247-3 Variant
TO-247-ISOPLUS-EP-(R)
MOSFET N-CH 200V 90A ISOPLUS247
IXYS
4,067
In Stock
1 : £14.40000
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N-Channel
MOSFET (Metal Oxide)
200 V
90A (Tc)
10V
22mOhm @ 45A, 10V
5V @ 4mA
240 nC @ 10 V
±20V
7500 pF @ 25 V
-
300W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
ISOPLUS247™
TO-247-3
TO-264
MOSFET N-CH 100V 200A TO264AA
IXYS
226
In Stock
1 : £14.94000
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Tube
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N-Channel
MOSFET (Metal Oxide)
100 V
200A (Tc)
10V
7.5mOhm @ 100A, 10V
5V @ 8mA
235 nC @ 10 V
±20V
7600 pF @ 25 V
-
830W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-264AA (IXFK)
TO-264-3, TO-264AA
TO-247_IXFH
MOSFET N-CH 1200V 16A TO247AD
IXYS
459
In Stock
1 : £15.74000
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Tube
Active
N-Channel
MOSFET (Metal Oxide)
1200 V
16A (Tc)
10V
950mOhm @ 8A, 10V
6.5V @ 1mA
120 nC @ 10 V
±30V
6900 pF @ 25 V
-
660W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247AD (IXFH)
TO-247-3
TO-264
MOSFET N-CH 300V 140A TO264AA
IXYS
866
In Stock
1 : £17.32000
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Tube
Active
N-Channel
MOSFET (Metal Oxide)
300 V
140A (Tc)
10V
24mOhm @ 70A, 10V
5V @ 8mA
185 nC @ 10 V
±20V
14800 pF @ 25 V
-
1040W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-264AA (IXFK)
TO-264-3, TO-264AA
TO-264
MOSFET N-CH 600V 64A TO264AA
IXYS
334
In Stock
1 : £17.32000
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Tube
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N-Channel
MOSFET (Metal Oxide)
600 V
64A (Tc)
10V
96mOhm @ 500mA, 10V
5V @ 8mA
200 nC @ 10 V
±30V
12000 pF @ 25 V
-
1040W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-264AA (IXFK)
TO-264-3, TO-264AA
SOT-227B
MOSFET N-CH 100V 200A SOT-227B
IXYS
788
In Stock
1 : £22.71000
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N-Channel
MOSFET (Metal Oxide)
100 V
200A (Tc)
10V
7.5mOhm @ 500mA, 10V
5V @ 8mA
235 nC @ 10 V
±20V
7600 pF @ 25 V
-
680W (Tc)
-55°C ~ 175°C (TJ)
-
-
Chassis Mount
SOT-227B
SOT-227-4, miniBLOC
TO-264
MOSFET N-CH 1000V 44A PLUS264
IXYS
406
In Stock
1 : £23.80000
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Tube
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N-Channel
MOSFET (Metal Oxide)
1000 V
44A (Tc)
10V
220mOhm @ 22A, 10V
6.5V @ 1mA
305 nC @ 10 V
±30V
19000 pF @ 25 V
-
1250W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PLUS264™
TO-264-3, TO-264AA
SOT-227B
MOSFET N-CH 800V 39A SOT-227B
IXYS
273
In Stock
1 : £24.91000
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N-Channel
MOSFET (Metal Oxide)
800 V
39A (Tc)
10V
190mOhm @ 500mA, 10V
5V @ 8mA
200 nC @ 10 V
±30V
12000 pF @ 25 V
-
694W (Tc)
-55°C ~ 150°C (TJ)
-
-
Chassis Mount
SOT-227B
SOT-227-4, miniBLOC
SOT-227B
MOSFET N-CH 300V 110A SOT-227B
IXYS
711
In Stock
1 : £25.49000
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N-Channel
MOSFET (Metal Oxide)
300 V
110A (Tc)
10V
24mOhm @ 70A, 10V
5V @ 8mA
185 nC @ 10 V
±20V
14800 pF @ 25 V
-
700W (Tc)
-55°C ~ 150°C (TJ)
-
-
Chassis Mount
SOT-227B
SOT-227-4, miniBLOC
SOT-227B
MOSFET N-CH 500V 66A SOT227B
IXYS
1,490
In Stock
1 : £27.12000
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N-Channel
MOSFET (Metal Oxide)
500 V
66A (Tc)
10V
65mOhm @ 500mA, 10V
5V @ 8mA
195 nC @ 10 V
±30V
12700 pF @ 25 V
-
700W (Tc)
-55°C ~ 150°C (TJ)
-
-
Chassis Mount
SOT-227B
SOT-227-4, miniBLOC
SOT-227B
MOSFET N-CH 600V 72A SOT-227B
IXYS
966
In Stock
1 : £29.88000
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N-Channel
MOSFET (Metal Oxide)
600 V
72A (Tc)
10V
75mOhm @ 41A, 10V
5V @ 8mA
240 nC @ 10 V
±30V
23000 pF @ 25 V
-
1040W (Tc)
-55°C ~ 150°C (TJ)
-
-
Chassis Mount
SOT-227B
SOT-227-4, miniBLOC
SOT-227B
MOSFET N-CH 100V 295A SOT227B
IXYS
328
In Stock
1 : £34.58000
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N-Channel
MOSFET (Metal Oxide)
100 V
295A (Tc)
10V
5.5mOhm @ 50A, 10V
5V @ 8mA
279 nC @ 10 V
±20V
23000 pF @ 25 V
-
1070W (Tc)
-55°C ~ 175°C (TJ)
-
-
Chassis Mount
SOT-227B
SOT-227-4, miniBLOC
SOT-227B
MOSFET N-CH 200V 188A SOT-227B
IXYS
287
In Stock
1 : £34.58000
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N-Channel
MOSFET (Metal Oxide)
200 V
188A (Tc)
10V
10.5mOhm @ 105A, 10V
4.5V @ 8mA
255 nC @ 10 V
±20V
18600 pF @ 25 V
-
1070W (Tc)
-55°C ~ 175°C (TJ)
-
-
Chassis Mount
SOT-227B
SOT-227-4, miniBLOC
SOT-227B
MOSFET N-CH 1000V 38A SOT-227B
IXYS
104
In Stock
1 : £36.66000
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N-Channel
MOSFET (Metal Oxide)
1000 V
38A (Tc)
10V
210mOhm @ 19A, 10V
6.5V @ 1mA
350 nC @ 10 V
±30V
24000 pF @ 25 V
-
1000W (Tc)
-55°C ~ 150°C (TJ)
-
-
Chassis Mount
SOT-227B
SOT-227-4, miniBLOC
SOT-227B
MOSFET N-CH 900V 56A SOT-227B
IXYS
246
In Stock
1 : £44.55000
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N-Channel
MOSFET (Metal Oxide)
900 V
56A (Tc)
10V
135mOhm @ 28A, 10V
6.5V @ 3mA
375 nC @ 10 V
±30V
23000 pF @ 25 V
-
1000W (Tc)
-55°C ~ 150°C (TJ)
-
-
Chassis Mount
SOT-227B
SOT-227-4, miniBLOC
IXFP4N85XM
MOSFET N-CH 850V 3.5A TO220
IXYS
586
In Stock
1,600
Factory
1 : £3.21000
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MOSFET (Metal Oxide)
850 V
3.5A (Tc)
10V
2.5Ohm @ 2A, 10V
5.5V @ 250µA
7 nC @ 10 V
±30V
247 pF @ 25 V
-
35W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220
TO-220-3 Full Pack
Showing
of 230

Single FET, MOSFETs


Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

  • Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
  • Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

  1. High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
  2. Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
  3. High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.