Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
IXFH80N65X2 MOSFET N-CH 650V 80A TO247 IXYS	3,813 In Stock	1 : £11.46000 Tube	HiPerFET™, Ultra X2	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	80A (Tc)	10V	40mOhm @ 40A, 10V	5.5V @ 4mA	143 nC @ 10 V	±30V	8245 pF @ 25 V	-	890W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 (IXTH)	TO-247-3
IXFN150N65X2 MOSFET N-CH 650V 145A SOT227B IXYS	301 In Stock	1 : £38.78000 Tube	HiPerFET™, Ultra X2	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	145A (Tc)	10V	17mOhm @ 75A, 10V	5V @ 8mA	355 nC @ 10 V	±30V	21000 pF @ 25 V	-	1040W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFP34N65X2 MOSFET N-CH 650V 34A TO220AB IXYS	5,163 In Stock	1 : £5.99000 Tube	HiPerFET™, Ultra X2	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	34A (Tc)	10V	105mOhm @ 17A, 10V	5.5V @ 2.5mA	56 nC @ 10 V	±30V	3330 pF @ 25 V	-	540W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3	TO-220-3
IXFH60N65X2 MOSFET N-CH 650V 60A TO247 IXYS	5,075 In Stock	1 : £9.45000 Tube	HiPerFET™, Ultra X2	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	60A (Tc)	10V	52mOhm @ 30A, 10V	5.5V @ 4mA	107 nC @ 10 V	±30V	6180 pF @ 25 V	-	780W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 (IXTH)	TO-247-3
IXFT80N65X2HV MOSFET N-CH 650V 80A TO268HV IXYS	137 In Stock 870 Factory	1 : £12.37000 Tube	HiPerFET™, Ultra X2	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	80A (Tc)	10V	-	5V @ 4mA	140 nC @ 10 V	±30V	8300 pF @ 25 V	-	890W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-268HV (IXFT)	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
IXFN100N65X2 MOSFET N-CH 650V 78A SOT227B IXYS	206 In Stock	1 : £20.78000 Tube	HiPerFET™, Ultra X2	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	78A (Tc)	10V	30mOhm @ 50A, 10V	5V @ 4mA	183 nC @ 10 V	±30V	10800 pF @ 25 V	-	595W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFB150N65X2 MOSFET N-CH 650V 150A PLUS264 IXYS	388 In Stock	1 : £24.72000 Tube	HiPerFET™, Ultra X2	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	150A (Tc)	10V	17mOhm @ 75A, 10V	5.5V @ 8mA	430 nC @ 10 V	±30V	20400 pF @ 25 V	-	1560W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PLUS264™	TO-264-3, TO-264AA
IXFN170N65X2 MOSFET N-CH 650V 170A SOT227B IXYS	200 In Stock	1 : £42.04000 Tube	HiPerFET™, Ultra X2	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	170A (Tc)	10V	13mOhm @ 85A, 10V	5V @ 8mA	434 nC @ 10 V	±30V	27000 pF @ 25 V	-	1170W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFP22N65X2M MOSFET N-CH 650V 22A TO220 IXYS	276 In Stock 500 Factory	1 : £4.32000 Tube	HiPerFET™, Ultra X2	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	22A (Tc)	10V	145mOhm @ 11A, 10V	5V @ 1.5mA	37 nC @ 10 V	±30V	2190 pF @ 25 V	-	37W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220 Isolated Tab	TO-220-3 Full Pack, Isolated Tab
IXFP22N65X2 MOSFET N-CH 650V 22A TO220 IXYS	4,990 In Stock	1 : £4.66000 Tube	HiPerFET™, Ultra X2	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	22A (Tc)	10V	160mOhm @ 11A, 10V	5.5V @ 1.5mA	38 nC @ 10 V	±30V	2310 pF @ 25 V	-	390W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3	TO-220-3
IXFA22N65X2 MOSFET N-CH 650V 22A TO263 IXYS	5,377 In Stock	1 : £4.81000 Tube	HiPerFET™, Ultra X2	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	22A (Tc)	10V	160mOhm @ 11A, 10V	5.5V @ 1.5mA	38 nC @ 10 V	±30V	2310 pF @ 25 V	-	390W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263HV	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXFH34N65X2 MOSFET N-CH 650V 34A TO247 IXYS	3,895 In Stock	1 : £6.87000 Tube	HiPerFET™, Ultra X2	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	34A (Tc)	10V	105mOhm @ 17A, 10V	5.5V @ 2.5mA	56 nC @ 10 V	±30V	3330 pF @ 25 V	-	540W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 (IXTH)	TO-247-3
IXFN120N65X2 MOSFET N-CH 650V 108A SOT227B IXYS	260 In Stock	1 : £32.81000 Tube	HiPerFET™, Ultra X2	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	108A (Tc)	10V	24mOhm @ 54A, 10V	5.5V @ 8mA	225 nC @ 10 V	±30V	15500 pF @ 25 V	-	890W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IXFP12N65X2 MOSFET N-CH 650V 12A TO220AB IXYS	161 In Stock	1 : £3.70000 Tube	HiPerFET™, Ultra X2	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	12A (Tc)	10V	310mOhm @ 6A, 10V	5V @ 250µA	18.5 nC @ 10 V	±30V	1134 pF @ 25 V	-	180W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3	TO-220-3
IXFP12N65X2M MOSFET N-CH 650V 12A TO220 IXYS	273 In Stock 500 Factory	1 : £3.76000 Tube	HiPerFET™, Ultra X2	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	12A (Tc)	10V	310mOhm @ 6A, 10V	5V @ 250µA	18.5 nC @ 10 V	±30V	1134 pF @ 25 V	-	40W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220 Isolated Tab	TO-220-3 Full Pack, Isolated Tab
IXFA12N65X2 MOSFET N-CH 650V 12A TO263AA IXYS	213 In Stock	1 : £3.87000 Tube	HiPerFET™, Ultra X2	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	12A (Tc)	10V	310mOhm @ 6A, 10V	5V @ 250µA	18.5 nC @ 10 V	±30V	1134 pF @ 25 V	-	180W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263AA (IXFA)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXFP18N65X2 MOSFET N-CH 650V 18A TO220AB IXYS	298 In Stock	1 : £4.39000 Tube	HiPerFET™, Ultra X2	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	18A (Tc)	10V	200mOhm @ 9A, 10V	5V @ 1.5mA	29 nC @ 10 V	±30V	1520 pF @ 25 V	-	290W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220	TO-220-3
IXFA22N65X2-TRL MOSFET N-CH 650V 22A TO263 IXYS	786 In Stock 1,600 Factory	1 : £4.81000 Cut Tape (CT) 800 : £1.93133 Tape & Reel (TR)	HiPerFET™, Ultra X2	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	650 V	22A (Tc)	10V	145mOhm @ 11A, 10V	5V @ 1.5mA	37 nC @ 10 V	±30V	2190 pF @ 25 V	-	390W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXFH22N65X2 MOSFET N-CH 650V 22A TO247 IXYS	5,065 In Stock	1 : £5.65000 Tube	HiPerFET™, Ultra X2	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	22A (Tc)	10V	160mOhm @ 11A, 10V	5.5V @ 1.5mA	38 nC @ 10 V	±30V	2310 pF @ 25 V	-	390W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 (IXTH)	TO-247-3
IXFH46N65X2 MOSFET N-CH 650V 46A TO247 IXYS	5,187 In Stock	1 : £8.26000 Tube	HiPerFET™, Ultra X2	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	46A (Tc)	10V	76mOhm @ 23A, 10V	5.5V @ 4mA	75 nC @ 10 V	±30V	4810 pF @ 25 V	-	660W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 (IXTH)	TO-247-3
IXFH26N65X2 IXFH26N65X2 IXYS	288 In Stock	1 : £9.74000 Tube	HiPerFET™, Ultra X2	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	26A (Tc)	10V	130mOhm @ 500mA, 10V	5V @ 2.5mA	45 nC @ 10 V	±30V	2450 pF @ 25 V	-	460W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247 (IXFH)	TO-247-3
IXFT60N65X2HV MOSFET N-CH 650V 60A TO268HV IXYS	293 In Stock 780 Factory	1 : £10.36000 Tube	HiPerFET™, Ultra X2	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	60A (Tc)	10V	52mOhm @ 30A, 10V	5V @ 4mA	108 nC @ 10 V	±30V	6300 pF @ 25 V	-	780W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-268HV (IXFT)	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
IXFH60N65X2-4 MOSFET N-CH 650V 60A TO247-4L IXYS	298 In Stock	1 : £10.57000 Tube	HiPerFET™, Ultra X2	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	60A (Tc)	10V	52mOhm @ 30A, 10V	5V @ 4mA	108 nC @ 10 V	±30V	6300 pF @ 25 V	-	780W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-4L	TO-247-4
IXFH80N65X2-4 MOSFET N-CH 650V 80A TO247-4L IXYS	120 In Stock 420 Factory	1 : £12.48000 Tube	HiPerFET™, Ultra X2	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	80A (Tc)	10V	38mOhm @ 500mA, 10V	5V @ 4mA	140 nC @ 10 V	±30V	8300 pF @ 25 V	-	890W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-4L	TO-247-4
IXFX120N65X2 MOSFET N-CH 650V 120A PLUS247-3 IXYS	120 In Stock 720 Factory	1 : £18.58000 Tube	HiPerFET™, Ultra X2	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	120A (Tc)	10V	24mOhm @ 60A, 10V	5.5V @ 8mA	225 nC @ 10 V	±30V	15500 pF @ 25 V	-	1250W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PLUS247™-3	TO-247-3 Variant

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.

Single FET, MOSFETs

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