Single FETs, MOSFETs

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
IPLK60R600PFD7ATMA1
MOSFET N-CH 600V 13A THIN-PAK
Infineon Technologies
10,578
In Stock
This product has a maximum purchase limit
1 : £1.56000
Cut Tape (CT)
5,000 : £0.41191
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
13A (Tc)
10V
360mOhm @ 2.9A, 10V
4.5V @ 140µA
12.7 nC @ 10 V
±20V
534 pF @ 400 V
-
74W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TDSON-8-52
8-PowerTDFN
TO252-3
MOSFET N-CH 600V 10A TO252-3
Infineon Technologies
1,008
In Stock
1 : £1.30000
Cut Tape (CT)
2,500 : £0.35477
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
10A (Tc)
10V
360mOhm @ 2.9A, 10V
4.5V @ 140µA
12.7 nC @ 10 V
±20V
534 pF @ 400 V
-
43W (Tc)
-40°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TO252-3-344
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO252-3
MOSFET N-CH 600V 16A TO252-3
Infineon Technologies
12,373
In Stock
1 : £1.87000
Cut Tape (CT)
2,500 : £0.54625
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
16A (Tc)
10V
210mOhm @ 4.9A, 10V
4.5V @ 240µA
23 nC @ 10 V
±20V
1015 pF @ 400 V
-
64W (Tc)
-40°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TO252-3-344
TO-252-3, DPAK (2 Leads + Tab), SC-63
1,902
In Stock
1 : £0.84000
Cut Tape (CT)
3,000 : £0.21059
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
4.7A (Tc)
10V
1Ohm @ 1A, 10V
4.5V @ 50µA
6 nC @ 10 V
±20V
230 pF @ 400 V
-
6W (Tc)
-40°C ~ 150°C (TJ)
-
-
Surface Mount
PG-SOT223-3-1
TO-261-3
TO252-3
MOSFET N-CH 600V 12A TO252-3
Infineon Technologies
1,514
In Stock
1 : £1.56000
Cut Tape (CT)
2,500 : £0.44194
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
12A (Tc)
10V
280mOhm @ 3.6A, 10V
4.5V @ 180µA
15.3 nC @ 10 V
±20V
656 pF @ 400 V
-
51W (Tc)
-40°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TO252-3-344
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO252-3
MOSFET N-CH 600V 3A TO252-3
Infineon Technologies
3,962
In Stock
1 : £0.78000
Cut Tape (CT)
2,500 : £0.19587
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Obsolete
N-Channel
MOSFET (Metal Oxide)
600 V
3A (Tc)
10V
2Ohm @ 500mA, 10V
4.5V @ 30µA
3.8 nC @ 10 V
±20V
134 pF @ 400 V
-
20W (Tc)
-40°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TO252-3-344
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO252-3
MOSFET N-CH 600V 3.6A TO252
Infineon Technologies
39
In Stock
1 : £0.86000
Cut Tape (CT)
2,500 : £0.21942
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
3.6A (Tc)
10V
1.5Ohm @ 700mA, 10V
4.5V @ 40µA
4.6 nC @ 10 V
±20V
169 pF @ 400 V
-
22W (Tc)
-40°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TO252-3-344
TO-252-3, DPAK (2 Leads + Tab), SC-63
0
In Stock
Check Lead Time
1 : £0.99000
Cut Tape (CT)
3,000 : £0.25189
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
6A (Tc)
10V
600mOhm @ 1.7A, 10V
4.5V @ 80µA
8.5 nC @ 10 V
±20V
344 pF @ 400 V
-
7W (Tc)
-40°C ~ 150°C (TJ)
-
-
Surface Mount
PG-SOT223-4
TO-261-4, TO-261AA
0
In Stock
1 : £0.93000
Cut Tape (CT)
2,500 : £0.24076
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
600 V
4.7A (Tc)
10V
1Ohm @ 1A, 10V
4.5V @ 50µA
6 nC @ 10 V
±20V
230 pF @ 400 V
-
26W (Tc)
-40°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TO252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
0
In Stock
Check Lead Time
1 : £1.06000
Cut Tape (CT)
2,500 : £0.27872
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
6A (Tc)
10V
600mOhm @ 1.7A, 10V
4.5V @ 80µA
8.5 nC @ 10 V
±20V
344 pF @ 400 V
-
31W (Tc)
-40°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TO252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
IPLK60R600PFD7ATMA1
MOSFET N-CH 600V 5.2A THIN-PAK
Infineon Technologies
0
In Stock
Check Lead Time
5,000 : £0.34519
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
5.2A (Tc)
10V
1Ohm @ 1A, 10V
4.5V @ 50µA
6 nC @ 10 V
±20V
230 pF @ 400 V
-
31.3W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TDSON-8-52
8-PowerTDFN
IPLK60R600PFD7ATMA1
MOSFET N-CH 600V 7A THIN-PAK
Infineon Technologies
0
In Stock
Check Lead Time
5,000 : £0.40020
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
7A (Tc)
10V
600mOhm @ 1.7A, 10V
4.5V @ 80µA
8.5 nC @ 10 V
±20V
344 pF @ 400 V
-
45W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TDSON-8-52
8-PowerTDFN
IPLK60R600PFD7ATMA1
MOSFET N-CH 600V 3.8A THIN-PAK
Infineon Technologies
0
In Stock
1 : £1.09000
Cut Tape (CT)
5,000 : £0.31336
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Last Time Buy
N-Channel
MOSFET (Metal Oxide)
600 V
3.8A (Tc)
10V
1.5Ohm @ 700mA, 10V
4.5V @ 40µA
4.6 nC @ 10 V
±20V
169 pF @ 400 V
-
25W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TDSON-8-52
8-PowerTDFN
Showing
of 13

Single FET, MOSFETs


Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

  • Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
  • Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

  1. High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
  2. Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
  3. High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.