Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
IPD60R1K5CEAUMA1 MOSFET N-CH 600V 5A TO252 Infineon Technologies	52,080 In Stock	1 : £0.73000 Cut Tape (CT) 2,500 : £0.17866 Tape & Reel (TR)	CoolMOS™ CE	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	600 V	5A (Tc)	10V	1.5Ohm @ 1.1A, 10V	3.5V @ 90µA	9.4 nC @ 10 V	±20V	200 pF @ 100 V	-	49W (Tc)	-40°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TO252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63
IPD70R360P7SAUMA1 MOSFET N-CH 700V 12.5A TO252-3 Infineon Technologies	39,002 In Stock	1 : £1.02000 Cut Tape (CT) 2,500 : £0.28684 Tape & Reel (TR)	CoolMOS™ P7	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	700 V	12.5A (Tc)	10V	360mOhm @ 3A, 10V	3.5V @ 150µA	16.4 nC @ 10 V	±16V	517 pF @ 400 V	-	59.4W (Tc)	-40°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TO252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63
IPD95R2K0P7ATMA1 MOSFET N-CH 950V 4A TO252-3 Infineon Technologies	74,582 In Stock	1 : £1.28000 Cut Tape (CT) 2,500 : £0.34852 Tape & Reel (TR)	CoolMOS™ P7	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	950 V	4A (Tc)	10V	2Ohm @ 1.7A, 10V	3.5V @ 80µA	10 nC @ 10 V	±20V	330 pF @ 400 V	-	37W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TO252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63
IPD60R360P7ATMA1 MOSFET N-CH 600V 9A TO252-3 Infineon Technologies	11,483 In Stock	1 : £1.32000 Cut Tape (CT) 2,500 : £0.39322 Tape & Reel (TR)	CoolMOS™ P7	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	9A (Tc)	10V	360mOhm @ 2.7A, 10V	4V @ 140µA	13 nC @ 10 V	±20V	555 pF @ 400 V	-	41W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TO252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63
IPN95R1K2P7ATMA1 MOSFET N-CH 950V 6A SOT223 Infineon Technologies	22,736 In Stock	1 : £1.34000 Cut Tape (CT) 3,000 : £0.35910 Tape & Reel (TR)	CoolMOS™ P7	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	950 V	6A (Tc)	10V	1.2Ohm @ 2.7A, 10V	3.5V @ 140µA	15 nC @ 10 V	±20V	478 pF @ 400 V	-	7W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-SOT223	TO-261-4, TO-261AA
IPD60R180P7SAUMA1 MOSFET N-CH 600V 18A TO252-3 Infineon Technologies	7,762 In Stock	1 : £1.44000 Cut Tape (CT) 2,500 : £0.43278 Tape & Reel (TR)	CoolMOS™ P7	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	18A (Tc)	10V	180mOhm @ 5.6A, 10V	4V @ 280µA	25 nC @ 10 V	±20V	1081 pF @ 400 V	-	72W (Tc)	-40°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TO252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63
IPLK60R360PFD7ATMA1 MOSFET N-CH 600V 13A THIN-PAK Infineon Technologies	11,382 In Stock	1 : £1.58000 Cut Tape (CT) 5,000 : £0.41574 Tape & Reel (TR)	CoolMOS™ PFD7	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	13A (Tc)	10V	360mOhm @ 2.9A, 10V	4.5V @ 140µA	12.7 nC @ 10 V	±20V	534 pF @ 400 V	-	74W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TDSON-8-52	8-PowerTDFN
IPD95R450P7ATMA1 MOSFET N-CH 950V 14A TO252-3 Infineon Technologies	10,450 In Stock	1 : £2.24000 Cut Tape (CT) 2,500 : £0.67337 Tape & Reel (TR)	CoolMOS™ P7	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	950 V	14A (Tc)	10V	450mOhm @ 7.2A, 10V	3.5V @ 360µA	35 nC @ 10 V	±20V	1053 pF @ 400 V	-	104W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TO252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63
IPP60R180P7XKSA1 MOSFET N-CH 650V 18A TO220-3 Infineon Technologies	9,528 In Stock	1 : £2.33000 Tube	CoolMOS™ P7	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	18A (Tc)	10V	180mOhm @ 5.6A, 10V	4V @ 280µA	25 nC @ 10 V	±20V	1081 pF @ 400 V	-	72W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-3	TO-220-3
IPB60R180P7ATMA1 MOSFET N-CH 600V 18A D2PAK Infineon Technologies	2,045 In Stock	1 : £2.33000 Cut Tape (CT) 1,000 : £0.77675 Tape & Reel (TR)	CoolMOS™ P7	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	18A (Tc)	10V	180mOhm @ 5.6A, 10V	4V @ 280µA	25 nC @ 10 V	±20V	1081 pF @ 400 V	-	72W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPAN60R125PFD7SXKSA1 MOSFET N-CH 650V 25A TO220 Infineon Technologies	7,023 In Stock	1 : £2.57000 Tube	CoolMOS™PFD7	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	25A (Tc)	10V	125mOhm @ 7.8A, 10V	4.5V @ 390µA	36 nC @ 10 V	±20V	1503 pF @ 400 V	-	32W (Tc)	-40°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-FP	TO-220-3 Full Pack
IPD60R145CFD7ATMA1 MOSFET N CH Infineon Technologies	15,000 In Stock	1 : £2.63000 Cut Tape (CT) 2,500 : £0.88628 Tape & Reel (TR)	CoolMOS™ CFD7	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	16A (Tc)	10V	145mOhm @ 6.8A, 10V	4.5V @ 340µA	31 nC @ 10 V	±20V	1330 pF @ 400 V	-	83W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252AA (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
IPD80R280P7ATMA1 MOSFET N-CH 800V 17A TO252 Infineon Technologies	6,047 In Stock	1 : £2.63000 Cut Tape (CT) 2,500 : £0.88653 Tape & Reel (TR)	CoolMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	800 V	17A (Tc)	10V	280mOhm @ 7.2A, 10V	3.5V @ 360µA	36 nC @ 10 V	±20V	1200 pF @ 500 V	-	101W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TO252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63
SPP11N80C3XKSA1 MOSFET N-CH 800V 11A TO220-3 Infineon Technologies	3,051 In Stock	1 : £2.89000 Tube	CoolMOS™	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	800 V	11A (Tc)	10V	450mOhm @ 7.1A, 10V	3.9V @ 680µA	85 nC @ 10 V	±20V	1600 pF @ 100 V	-	156W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-3-1	TO-220-3
IPB60R120P7ATMA1 MOSFET N-CH 600V 26A D2PAK Infineon Technologies	154 In Stock	1 : £3.10000 Cut Tape (CT) 1,000 : £1.08137 Tape & Reel (TR)	CoolMOS™ P7	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	26A (Tc)	10V	120mOhm @ 8.2A, 10V	4V @ 410µA	36 nC @ 10 V	±20V	1544 pF @ 400 V	-	95W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SPP20N60C3XKSA1 MOSFET N-CH 600V 20.7A TO220-3 Infineon Technologies	1,993 In Stock	1 : £3.37000 Tube	CoolMOS™	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	600 V	20.7A (Tc)	10V	190mOhm @ 13.1A, 10V	3.9V @ 1mA	114 nC @ 10 V	±20V	2400 pF @ 25 V	-	208W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-3-1	TO-220-3
IPL60R105P7AUMA1 MOSFET N-CH 600V 33A 4VSON Infineon Technologies	3,017 In Stock	1 : £3.74000 Cut Tape (CT) 3,000 : £1.24937 Tape & Reel (TR)	CoolMOS™ P7	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	33A (Tc)	10V	105mOhm @ 10.5A, 10V	4V @ 530µA	45 nC @ 10 V	±20V	1952 pF @ 400 V	-	137W (Tc)	-40°C ~ 150°C (TJ)	-	-	Surface Mount	PG-VSON-4	4-PowerTSFN
SPW20N60C3FKSA1 MOSFET N-CH 650V 20.7A TO247-3 Infineon Technologies	6,149 In Stock	1 : £4.18000 Tube	CoolMOS™	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	650 V	20.7A (Tc)	10V	190mOhm @ 13.1A, 10V	3.9V @ 1mA	114 nC @ 10 V	±20V	2400 pF @ 25 V	-	208W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-3-1	TO-247-3
IPB60R060P7ATMA1 MOSFET N-CH 600V 48A D2PAK Infineon Technologies	10,813 In Stock	1 : £4.62000 Cut Tape (CT) 1,000 : £1.73146 Tape & Reel (TR)	CoolMOS™ P7	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	48A (Tc)	10V	60mOhm @ 15.9A, 10V	4V @ 800µA	67 nC @ 10 V	±20V	2895 pF @ 400 V	-	164W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPDD60R075CFD7XTMA1 MOSFET N-CH 600V 40A HDSOP-10 Infineon Technologies	2,945 In Stock	1 : £4.93000 Cut Tape (CT) 1,700 : £1.81057 Tape & Reel (TR)	CoolMOS™ CFD7	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	40A (Tc)	-	75mOhm @ 11.4A, 10V	4.5V @ 570µA	51 nC @ 10 V	±20V	2102 pF @ 400 V	-	266W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-HDSOP-10-1	10-PowerSOP Module
IPW60R080P7XKSA1 MOSFET N-CH 600V 37A TO247-3 Infineon Technologies	1,680 In Stock	1 : £4.93000 Tube	CoolMOS™ P7	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	37A (Tc)	10V	80mOhm @ 11.8A, 10V	4V @ 590µA	51 nC @ 10 V	±20V	2180 pF @ 400 V	-	129W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-3	TO-247-3
IPL60R060CFD7AUMA1 MOSFET N CH Infineon Technologies	379 In Stock	1 : £5.60000 Cut Tape (CT) 3,000 : £2.14928 Tape & Reel (TR)	CoolMOS™ CFD7	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	40A (Tc)	10V	60mOhm @ 18A, 10V	4.5V @ 900µA	79 nC @ 10 V	±20V	3193 pF @ 400 V	-	219W (Tc)	-40°C ~ 150°C (TJ)	-	-	Surface Mount	PG-VSON-4-1	4-PowerTSFN
IPW60R070CFD7XKSA1 MOSFET N-CH 650V 31A TO247-3 Infineon Technologies	954 In Stock	1 : £5.53000 Tube	CoolMOS™ CFD7	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	31A (Tc)	10V	70mOhm @ 15.1A, 10V	4.5V @ 760µA	67 nC @ 10 V	±20V	2721 pF @ 400 V	-	156W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-3-21	TO-247-3
IPL60R065P7AUMA1 MOSFET N-CH 600V 41A 4VSON Infineon Technologies	8,558 In Stock	1 : £5.86000 Cut Tape (CT) 3,000 : £2.28222 Tape & Reel (TR)	CoolMOS™ P7	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	41A (Tc)	10V	65mOhm @ 15.9A, 10V	4V @ 800µA	67 nC @ 10 V	±20V	2895 pF @ 400 V	-	201W (Tc)	-40°C ~ 150°C (TJ)	-	-	Surface Mount	PG-VSON-4	4-PowerTSFN
IPB60R055CFD7ATMA1 MOSFET N-CH 600V 38A TO263-3 Infineon Technologies	5,284 In Stock	1 : £5.98000 Cut Tape (CT) 1,000 : £2.37252 Tape & Reel (TR)	CoolMOS™ CFD7	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	600 V	38A (Tc)	10V	55mOhm @ 18A, 10V	4.5V @ 900µA	79 nC @ 10 V	±20V	3194 pF @ 400 V	-	178W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TO263-3-2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.

Single FET, MOSFETs

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