Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
TPWR7904PB,L1XHQ MOSFET N-CH 40V 150A 8DSOP Toshiba Semiconductor and Storage	6,809 In Stock	1 : £2.13000 Cut Tape (CT) 5,000 : £0.64838 Tape & Reel (TR)	U-MOSIX-H	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	40 V	150A (Ta)	6V, 10V	0.79mOhm @ 75A, 10V	3V @ 1mA	85 nC @ 10 V	±20V	6650 pF @ 10 V	-	960mW (Ta), 170W (Tc)	175°C	Automotive	AEC-Q101	Surface Mount	8-DSOP Advance	8-PowerVDFN
TP86R203NL,LQ MOSFET N CH 30V 19A 8SOP Toshiba Semiconductor and Storage	10,382 In Stock	1 : £1.09000 Cut Tape (CT) 2,500 : £0.29026 Tape & Reel (TR)	U-MOSVIII-H	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	19A (Ta)	4.5V, 10V	6.2mOhm @ 9A, 10V	2.3V @ 200µA	17 nC @ 10 V	±20V	1400 pF @ 15 V	-	1W (Tc)	150°C (TJ)	-	-	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
G040P04M MOSFET P-CH 40V 222A TO-263 Goford Semiconductor	448 In Stock	1 : £2.17000 Cut Tape (CT)	TrenchFET®	Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	40 V	180A (Tc)	4.5V, 10V	3.5mOhm @ -15A,- 10V	2.5V @ 250µA	206 nC @ 10 V	±20V	14983 pF @ 20 V	-	178W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.