Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
RE1C002UNTCL MOSFET N-CH 20V 200MA EMT3F Rohm Semiconductor	583,353 In Stock	1 : £0.16000 Cut Tape (CT) 3,000 : £0.02498 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	200mA (Ta)	1.2V, 2.5V	1.2Ohm @ 100mA, 2.5V	1V @ 1mA	-	±8V	25 pF @ 10 V	-	150mW (Ta)	150°C (TJ)	-	-	Surface Mount	EMT3F (SOT-416FL)	SC-89, SOT-490
DMN3023L-7 MOSFET N-CH 30V 6.2A SOT23 Diodes Incorporated	163,872 In Stock 7,977,000 Factory	1 : £0.36000 Cut Tape (CT) 3,000 : £0.06607 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	6.2A (Ta)	2.5V, 10V	25mOhm @ 4A, 10V	1.8V @ 250µA	18.4 nC @ 10 V	±20V	873 pF @ 15 V	-	900mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
RZE002P02TL MOSFET P-CH 20V 200MA EMT3 Rohm Semiconductor	75,816 In Stock	1 : £0.32000 Cut Tape (CT) 3,000 : £0.05592 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Not For New Designs	P-Channel	MOSFET (Metal Oxide)	20 V	200mA (Ta)	1.2V, 4.5V	1.2Ohm @ 200mA, 4.5V	1V @ 100µA	1.4 nC @ 4.5 V	±10V	115 pF @ 10 V	-	150mW (Ta)	150°C (TJ)	-	-	Surface Mount	EMT3	SC-75, SOT-416

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.