Single FETs, MOSFETs

Results: 3
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-236AB
2N7002,215
MOSFET N-CH 60V 300MA TO236AB
Nexperia USA Inc.
451,990
In Stock
1 : £0.19000
Cut Tape (CT)
3,000 : £0.03814
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
300mA (Tc)
10V
5Ohm @ 500mA, 10V
2.5V @ 250µA
-
±30V
50 pF @ 10 V
-
830mW (Ta)
-65°C ~ 150°C (TJ)
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
SOT-23-3
DMN3404L-7
MOSFET N-CH 30V 5.8A SOT23-3
Diodes Incorporated
30,774
In Stock
3,672,000
Factory
1 : £0.27000
Cut Tape (CT)
3,000 : £0.05469
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
5.8A (Ta)
3V, 10V
28mOhm @ 5.8A, 10V
2V @ 250µA
9.2 nC @ 10 V
±20V
386 pF @ 15 V
-
720mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-23-3
DMG3402L-7
MOSFET N-CH 30V 4A SOT23
Diodes Incorporated
224,674
In Stock
4,740,000
Factory
1 : £0.34000
Cut Tape (CT)
3,000 : £0.06080
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
4A (Ta)
2.5V, 10V
52mOhm @ 4A, 10V
1.4V @ 250µA
11.7 nC @ 10 V
±12V
464 pF @ 15 V
-
1.4W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
Showing
of 3

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.