Single FETs, MOSFETs

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	Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
	IPA60R190P6XKSA1 MOSFET N-CH 600V 20.2A TO220-FP Infineon Technologies	382 In Stock	1 : £2.36000 Tube	CoolMOS™ P6	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	20.2A (Tc)	10V	190mOhm @ 7.6A, 10V	4.5V @ 630µ	37 nC @ 10 V	±20V	1750 pF @ 100 V	-	34W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-FP	TO-220-3 Full Pack
	IPA60R125P6XKSA1 MOSFET N-CH 600V 30A TO220-FP Infineon Technologies	0 In Stock Check Lead Time	1 : £2.35000 Tube	CoolMOS™ P6	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	30A (Tc)	10V	125mOhm @ 11.6A, 10V	4.5V @ 960µA	56 nC @ 10 V	±20V	2660 pF @ 100 V	-	34W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-FP	TO-220-3 Full Pack

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.