Single FETs, MOSFETs

Results: 3
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
BA17818FP-E2
RD3H160SPTL1
MOSFET P-CH 45V 16A TO252
Rohm Semiconductor
4,258
In Stock
1 : £1.80000
Cut Tape (CT)
2,500 : £0.51993
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
45 V
16A (Ta)
4V, 10V
50mOhm @ 16A, 10V
3V @ 1mA
16 nC @ 5 V
±20V
2000 pF @ 10 V
-
20W (Tc)
150°C (TJ)
-
-
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
SIHP050N60E-GE3
IRF530PBF-BE3
MOSFET N-CH 100V 14A TO220AB
Vishay Siliconix
642
In Stock
1 : £1.94000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
14A (Tc)
10V
160mOhm @ 8.4A, 10V
4V @ 250µA
26 nC @ 10 V
±20V
670 pF @ 25 V
-
88W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
BA17818FP-E2
RD3L220SNFRATL
MOSFET N-CH 60V 22A TO252
Rohm Semiconductor
1,983
In Stock
1 : £2.26000
Cut Tape (CT)
2,500 : £0.68279
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
22A (Ta)
4V, 10V
26mOhm @ 22A, 10V
3V @ 1mA
30 nC @ 10 V
±20V
1500 pF @ 10 V
-
20W (Tc)
150°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
Showing
of 3

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.