Single FETs, MOSFETs

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	Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
	IRFP4468PBF MOSFET N-CH 100V 195A TO247AC Infineon Technologies	1,189 In Stock	1 : £6.78000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	195A (Tc)	10V	2.6mOhm @ 180A, 10V	4V @ 250µA	540 nC @ 10 V	±20V	19860 pF @ 50 V	-	520W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247AC	TO-247-3
	SIS128LDN-T1-GE3 MOSFET N-CH 80V 10.2A/33.7A PPAK Vishay Siliconix	13,271 In Stock	1 : £1.08000 Cut Tape (CT) 3,000 : £0.28165 Tape & Reel (TR)	TrenchFET® Gen IV	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	80 V	10.2A (Ta), 33.7A (Tc)	4.5V, 10V	15.6mOhm @ 10A, 10V	2.5V @ 250µA	30 nC @ 10 V	±20V	1250 pF @ 40 V	-	3.6W (Ta), 39W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8	PowerPAK® 1212-8

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.